W 60090 Search Results

Contextual Info: Chip Varistor V2012 / V3216 T O K Ifl w w w .pdf 11 /9 7 P ag e 1 o f 3 SMD Type Chip Varistor provides highly reliable surface mount application. Features □ High surge resistance: 100 to 270A. □ ZnO ceramic varistor. Applications □ ESD countermeasures, burst noise protection measures.

SIT Static Induction Transistor

Abstract: 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182
Contextual Info: Another Tokin exclusive. Static Induction Ibansisiors SIT Static Induction Transistor w as in v e n te d by Professor Jun-ichi N ishizawa of Tohoku U niversity in 1950. After several s u b s e q u e n t technological d e v e lo p ­ m e n ts a n d im p ro v e m e n ts, it w a s first utilized in 1979 as a n industrial p o w e r SIT.

7912A

Abstract: NEC FIP c13 1-51-5T
Contextual Info: Y * pPD424410 1,048,576 X 4-Bit Dynamic CM OS RAM L y IL W N E C Electro nics Inc. Function Ao - Ag Address inputs I/O, - I/O 4 D ata inputs and o utp uts CAS C olum n address strobe ÜË O u tp u t enable RAS Row address strobe WE W rite enable GND Ground

D4244

Contextual Info: fiP D 4 2 4 4 1 0 F IM I W 1,048,576 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. The /JPD424410 is a 1,048,576 by 4-bit dynam ic RAM designed with a w rite-per-bit option to o perate from a single + 5 -v o lt power supply. Advanced polycide tech­ nology m inim izes silicon area and provides high stor­

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

SF2079D

Abstract: LTE repeater ICS Interference tx 433 saw to39 gainspan SEM2411 snap on tools for electronic SF2181D IA-510 SF2182D SF2194E
Contextual Info: Wireless is Delivering M2M Around the World W IRELESS C OMMUNICATIONS 2009 / 2010 S HORT-F ORM C ATALOG Revised May 27, 2010 Industrial 802.11b/g 802.15.4 Commercial ZigBee® Proprietary FHSS Consumer Proprietary Mesh Telecom RFICs SAW-Based Medical Resonators

diode b27

Abstract: diagram induction heater induction heater induction heater 090 30 kw induction heater ERD65-090 H150
Contextual Info: ERD65-090 30A rnxstm?*- K • Outline Drawings FAST RECOVERY DIODE : Features • iftWIE High Voltage • Low forw ard Voltage drop. • ' JVS S m a l l Package mmm & m Connection Diagram : Applications • W /± & t§ S iK Voltage Resonance Power Supply

Contextual Info: HIGH POWER WHITE ILLUMINATOR PRELIMINARY OTLWHTA-9-4-66-E 1.242" 0.960" WWYY 0.309" 0.690" ø0.147" FEATURES: ø0.430" • High reliability GaN Blue LED’s w/ Phosphor Overcoat • Very High Output Power • Broad Emission Band • TO-66 package • Nine, four chip cells connected in series

MIL-T-27

Abstract: and10kHz
Contextual Info: SURFACE MOUNT POWER INDUCTORS P o w e r Inductors Package AO: .25 to 6.6 A, .020 to 100 uH ELECTRICAL SPECIFICATIONS VE Part Number Series Inductance uH t 12% Series Rated D.C. mA Series D.C. Res. Ohms Max Parallel Inductance uH t 12% Parallel Rated D.C. mA

current sensor 500mA

Abstract: Opto-Technology PHOTO SENSOR of application DTM300
Contextual Info: • bñG22HS 000024S 7 OPTO TECHNOLOGY INC ■ OTI <42E T> T -M W . OPTO TECHNOLOGY MODULATED REFLECTIVE SENSOR T Y P E OTM 9 0 0 Features ■ Modulated to eliminate ambient light problems ■ Small package size ■ Low cost Description Opto Technology's new OTM

555i

Contextual Info: OP T O TECHNOLOGY EÖE INC D ba02245 0G00CH4 1 = V/-73 OPTO TECHNOLOGY TYPE OTS 250 OTS 255 r .:• c '- j ! OP-TEC" 0TS255 OPTICAL SWITCH W/.060 APERTURE NOT ACTU AL SIZE DESCRIPTION Non-contact switching is provided by Opto Technology’s OTS 250/OTS 255

ULTRA BRIGHT WHITE LED

Abstract: OTLWHTA-1-1-T3-020 "ultra bright white led"
Contextual Info: T1 ULTRA BRIGHT WHITE LED OTLWHTA-1-1-T3-020 FEATURES: • High Reliability GaN Blue LED’s w/ Phosphor Overcoat • High Output Power • Broad Emission Band • T1 Package PRODUCT DESCRIPTION The OTLWHTA-1-1-T3-020 uses one high efficiency gallium nitride GaN blue light emitting diodes

"ultra bright white led"

Abstract: OTLWHTA-1-1-T3-030 ULTRA BRIGHT WHITE LED
Contextual Info: T1 ULTRA BRIGHT WHITE LED OTLWHTA-1-1-T3-030 FEATURES: • High Reliability GaN Blue LED’s w/ Phosphor Overcoat • High Output Power • Broad Emission Band • T1 Package PRODUCT DESCRIPTION The OTLWHTA-1-1-T3-030 uses one high efficiency gallium nitride GaN blue light emitting diodes

"ultra bright white led"

Abstract: OTLWHTA-1-1-S1-100
Contextual Info: SMT ULTRA BRIGHT WHITE LED OTLWHTA-1-1-S1-100 FEATURES: • High Reliability GaN Blue LED’s w/ Phosphor Overcoat • High Output Power • Broad Emission Band • Surface Mount Package PRODUCT DESCRIPTION The OTLWHTA-1-1-S1-100 uses one high efficiency gallium nitride GaN blue light emitting diodes

"ultra bright white led"

Abstract: OTLWHTA-1-1-T5-016 ULTRA BRIGHT WHITE LED Y035
Contextual Info: T1 3/4 ULTRA BRIGHT WHITE LED OTLWHTA-1-1-T5-016 FEATURES: • High Reliability GaN Blue LED’s w/ Phosphor Overcoat • High Output Power • Broad Emission Band • T1 3/4 Package PRODUCT DESCRIPTION The OTLWHTA-1-1-T5-016 uses one high efficiency gallium nitride GaN blue light emitting diodes

"ultra bright white led"

Abstract: OTLWHTA-1-1-T5-020
Contextual Info: T1 3/4 ULTRA BRIGHT WHITE LED OTLWHTA-1-1-T5-020 FEATURES: • High Reliability GaN Blue LED’s w/ Phosphor Overcoat • High Output Power • Broad Emission Band • T1 3/4 Package PRODUCT DESCRIPTION The OTLWHTA-1-1-T5-020 uses one high efficiency gallium nitride GaN blue light emitting diodes

"ultra bright white led"

Abstract: ULTRA BRIGHT WHITE LED OTLWHTA-1-1-T5-045 bright white LED
Contextual Info: T1 3/4 ULTRA BRIGHT WHITE LED OTLWHTA-1-1-T5-045 FEATURES: • High Reliability GaN Blue LED’s w/ Phosphor Overcoat • High Output Power • Broad Emission Band • T1 3/4 Package PRODUCT DESCRIPTION The OTLWHTA-1-1-T5-045 uses one high efficiency gallium nitride GaN blue light emitting diodes

Contextual Info: DOMESTIC REPS HAWAII MINNESOTA OHIO ALABAMA Centaur North, Inc. D.A. Case Associates, Inc. Midwest Marketing Associates 2 8 9 0 Zanker Road, Ste. 203 San Jo se, CA 9 5 1 3 4 4 0 8 8 9 4 -0 1 8 2 4 6 2 0 W 77th Street Suite # 2 5 0 M inneapolis, M N 5 5 435

t410 TRANSISTOR

Abstract: TO46 lens phototransistor 410D TL41 otl410s OT410D OTL410D T410S opto npn L21S
Contextual Info: •i bfl05245 OOODIBÌ fi IOTI OPTO TECHN0L06Y INC MEE D "T -M I-W l OPTO TECHNOLOGY N P N SILICO N P H G T O T R A N S IS T O R TYPE OT 410 Features ■ TO-46 package ■ H erm etically sealed device ■ High sensitivity Description The 0T41C sensors co nsist of

Contextual Info: FEB SEC e « 2 JLIPD424410 1,048,576 x 4-Bit Dynamic CMOS RAM NEC Electronics Inc. October 1991 Description Pin Configurations T he f jPD424410 is a 1,048,576 by 4-bit dynam ic RAM designed with a w rite-per-bit option to o p e ra te from a single + 5-volt pow er supply. Advanced polycide tech­

vfva

Contextual Info: Vr Valpey Fisher Corporation M IC R O W A V E P R O D U C T S G R O U P VFVA500 Series V o lta g e V a ria b le A tte nu a to rs Part# Application Freq MHz IL (dB) VFVA500-200 LTE 700 698-798 600-900 VFVA501-200 GSM / WCDMA Bands 5,6,7,8 824-960 700-1100

Contextual Info: ARK-LES CORPORATION DEPT I Í 2 3 4 -a. 5 6 7 8 9 I0 II I2 ME. b CUSTOMER W ATERTOW N,MASS. DRAWING PART NO. PART NAME : T L P i M I 1M A I _ - R IN G , PART NO. 2.&CL-QO ZB\~Q ZGiZ-O SHEET \ OF 2. ^ n n n STUD STOCKs %L" THKs. MATERIAL/FINISH INS.DIA. SIZE i.OO\

H100

Contextual Info: m bô 0224S D D Q Q S n OPTO T E CH NO LO GY b INC OPTO TECHNOLOGY R E F L E C T IV E S W IT C H T Y P E OTR 6 5 0 Features • TD-18 reflective sensor ■ .0 3 0 aperture ■ Pho totransistor Description Opto Technology's OTR 650 re­ flective sensor combines two

MRF843

Abstract: MRF843F N75-5
Contextual Info: 12E 0 I b3b?ES4 G0fi?fltì 4 3 | /-3V l| MOTOROLA SC XSTRS/R F MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF843 MRF843F The RF Line N P N Silicon RF Pow er Transistors 15 W 806-960 MHz RF POW ER T R A N SIST O R S C O M M O N BA SE N PN SILICON . designed for 12.5 Volt UHF large-signal, common-base applications in industrial and