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Excelitas Technologies Corporation VTB8341H Diode, Photo, 920Nm, 60°; No. Of Pins:2Pins; Diode Case Style:Radial Leaded; Wavelength Of Peak Sensitivity:920Nm; Angle Of Half Sensitivity ±:60°; Dark Current:100Pa; Operating Temperature Min:-20°C; Operating Temperature Max:75°C Rohs Compliant: Yes \|Excelitas Tech VTB8341H
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	VTB8341H	Bulk			250	1 - 10 - 100 - 1000 - 10000 -	Buy Now

VTB8341 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VTB8341		PerkinElmer Optoelectronics	VTB Process Photodiode		Original	PDF
VTB8341		EG&G	BLUE ENHANCED ULTRA HIGH DARK RESISTANCE		Scan	PDF
VTB8341		EG&G Vactec	VTB Process Photodiodes		Scan	PDF
VTB8341		EG&G Vactec	VTB Process Photodiodes		Scan	PDF

VTB8341 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: VTB8341 VTB Process Photodiodes PACKAGE DIM ENSIONS inch mm 1.40 ( 3 5 .6 ) ( 3 .5 6 ) J .2 0 0 ( 5 .0 8 ) .2 6 2 ( 6 .6 5 ) NOM . -, .0 7 3 ( 1.8 5 ) 221 ( 5.611 .0 6 7 ( 1.7 0 ) Voc TC Voc Id R sh -20°C to 75°C Operating Temperature: -20°C to 75°C	OCR Scan	VTB8341	PDF
Contextual Info: VTB Process Photodiodes VTB8341 PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very	Original	VTB8341	PDF
VTB8341 Contextual Info: VTB8341 VTB Process Photodiodes PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2l PRODUCT DESCRIPTION Planar silicon photodiode mounted on a tw o lead ceram ic substrate and coated with a thick layer of clear epoxy. These diodes offer very high shunt	OCR Scan	VTB8341 VTB8341	PDF
Contextual Info: VTB Process Photodiodes VTB8341H PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very	Original	VTB8341H	PDF
VTB8341H Contextual Info: VTB Process Photodiodes VTB8341H PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very	Original	VTB8341H VTB8341H	PDF
VTB8341 Abstract: D320 Contextual Info: VTB Process Photodiodes VTB8341 PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very	Original	VTB8341 VTB8341 D320	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
VTB8340 Abstract: VTB8341 Contextual Info: _ SbE D • 3 0 3 G b 0 T 0 0 0 1 0 S G bTfl IVCT V T B 8 3 4 0 , 8341 VTB Process Photodiodes Z 6 & 6 VACTE C T-41-51 PACKAGE DIMENSIONS inch mm CASE 11 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.	OCR Scan	0001QSQ VTB8340, T-41-51 VTB8340 VTB8341 28Circuit 100fc, 2850K 2x1012 VTB8340 VTB8341	PDF
VTB8340 Abstract: VTB8341 Contextual Info: _ SbE D • aGBGbGT 0DD10SG VTB Process Photodiodes bT Ô I VCT V T B 8 3 4 0 , 8341 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm 1 .4 0 ( 3 5 .6 ) M IN IM UM (3 .5 6 ) f .2 6 8 (6 .8 1 ) .2 6 2 ■0 7 3 ( 1 .8 5 ) .0 6 7 f 1 .7 0 1 CASE 11 PRODUCT DESCRIPTION	OCR Scan	VTB8340, T-41-51 VTB8340 VTB8341 4x10-14 2x1012 7x1012 VTB8340 VTB8341	PDF
VTB8440 Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue	Original	VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B	PDF
VTP1220FBH Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0	Original	2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H	PDF