VTB6061J Search Results
VTB6061J Price and Stock
Excelitas Technologies Corporation VTB6061JHPhoto Diode; No. Of Pins:2Pins; Diode Case Style:To-8; Wavelength Of Peak Sensitivity:920Nm; Angle Of Half Sensitivity ±:55°; Dark Current:2000Pa; Operating Temperature Min:-40°C; Operating Temperature Max:110°C; Product Range:- Rohs Compliant: Yes |Excelitas Tech VTB6061JH |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VTB6061JH | Bulk | 250 |
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VTB6061J Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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VTB6061J | PerkinElmer Optoelectronics | VTB Process Photodiode | Original | |||
VTB6061J | EG&G | BLUE ENHANCED ULTRA HIGH DARK RESISTANCE | Scan | |||
VTB6061J | EG&G Vactec | VTB Process Photodiodes | Scan | |||
VTB6061J | EG&G Vactec | VTB Process Photodiodes | Scan |
VTB6061J Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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VTB6061JContextual Info: VTB Process Photodiodes VTB6061J PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to |
Original |
VTB6061J VTB6061J | |
VTB6061JH
Abstract: D92-02
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VTB6061JH VTB6061JH D92-02 | |
Contextual Info: VTB Process Photodiodes VTB6061J PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to |
Original |
VTB6061J | |
Contextual Info: VTB Process Photodiodes VTB6061JH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to |
Original |
VTB6061JH | |
Contextual Info: VTB6061J VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2} Large area planar silicon photodiode in a "flat” window, three lead TO-8 pack age. Chip is isolated from case. The |
OCR Scan |
VTB6061J VTBS061J | |
C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
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10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 | |
VTB6060J
Abstract: VTB6061J Vactec 6061J
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OCR Scan |
3030bCH VTB6060J, 6061J T-41-51 VTB60oefficient 6x1012 x1013 VTB6060J VTB6061J Vactec 6061J | |
VTB6061JContextual Info: VTB Process Photodiodes V T B 6 0 6 1J PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C A S E 15A Large area p la n a rsilico n photodiode in a "fla t’ w indow , three lead T O -8 pack age. C h ip is isolated from case. Th e third lead allow s ca se to be grounded. |
OCR Scan |
VTB6061J VTB6061J | |
VTB6060
Abstract: 2X10 VTB6060J VTB6061J 6061J
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OCR Scan |
0001D147 VTB6060J, 6061J T-41-51 VTB6060J 1001c, x1013 VTB6060 2X10 VTB6060J VTB6061J 6061J | |
VTB8440
Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
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VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B |