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Abstract: No abstract text available
Text: VTB Process Photodiodes VTB5051UV PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a dual lead TO-5 package with a UV transmitting “flat” window. Chip is common to the case. These diodes have
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Abstract: uv led 365 D9202 22001 UV led 200 nm peak
Text: VTB Process Photodiodes VTB5051UVJH PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window. Chip is isolated from the case. The third lead
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uv led 365
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22001
UV led 200 nm peak
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Abstract: No abstract text available
Text: VTB Process Photodiodes VTB5051UVJH PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window. Chip is isolated from the case. The third lead
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uv led 365
Abstract: 220nm VOC application Circuit VTB5051 VTB5051UVH
Text: VTB Process Photodiodes VTB5051UVH PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a dual lead TO-5 package with a UV transmitting “flat” window. Chip is common to the case. These diodes have
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uv led 365
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VOC application Circuit
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uv led 365
Abstract: VTB5051UVJ
Text: VTB5051U VJ VTB Process Photodiodes PACKAGE DIM ENSIO NS inch mm PRODUCT DESCRIPTION CASE 14A Planar silicon photodiode in a three lead TO -5 package with a U V transmit ting “flat” window. Chip is isolated from ABSOLU TE MAXIMUM RATINGS case. Th e third lead allows case to be
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3030bCH
uv led 365
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uv led 365
Abstract: VTB5051UVJ
Text: VTB Process Photodiodes VTB5051UVJ PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window. Chip is isolated from the case. The third lead
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Abstract: No abstract text available
Text: VTB5051UV VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a dual lead TO-5 package with a UV trans mitting “flat” window. Cathode is com mon to the case. These diodes offer very high shunt resistance and good
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VTB5051UV
TB5051U
0m/0pt08rp
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Untitled
Abstract: No abstract text available
Text: VTB5051UVJ VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14A Planar silicon photodiode in a three lead TO -5 package with a U V transmit ting “flat” window. Chip is isolated from case. The third lead allows case to be
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VTB5051UVJ
VTBS051UVJ
303Dbm
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Abstract: No abstract text available
Text: VTB Process Photodiodes VTB5051UVJ PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window. Chip is isolated from the case. The third lead
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Abstract: No abstract text available
Text: VTB Process Photodiodes VTB5051UVH PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a dual lead TO-5 package with a UV transmitting “flat” window. Chip is common to the case. These diodes have
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uv led 365
Abstract: VTB5051UV
Text: VTB Process Photodiodes VTB5051UV PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a dual lead TO-5 package with a UV transmitting “flat” window. Chip is common to the case. These diodes have
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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uv led 365
Abstract: 10H3 VTB5050UV VTB5051UV
Text: V T B 5 0 5 0 U V , 51 UV VTB Process Photodiodes E G 8. G VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planar silicon photodiode in a dual lead T O -5 package with a UV transm it tin g 'fla t' window . Cathode is common
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9x1012
uv led 365
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VTB5050UV
Abstract: VTB5051UV
Text: SbE D • I BGBDbG'ì 0DD1G43 H b f l M V C T VTB5050UV, 51 UV VTB Process Photodiodes E G 8. 6 VACTEC PACKAGE D IM EN SIO N S inch mm [ PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a dual lead T O -5 package with a UV transm it ting “fla t1w indow . Cathode is common
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0DD1043
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VTB5050UV
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9x1012
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VTP1220FBH
Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0
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VTS3082H
VTS3085H
VTS3185H
VTS3082H
VTS3085H
VTS3185H
VTP1220FBH
VTS3082
VTB9412BH
VTB1013B
VTP1012H
VTB8441BH
VTD34H
VTP4085H
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UV led 200 nm peak
Abstract: uv led 365 VTB5050UVJ VTB5051UVJ
Text: £fc E D 30301,0^ 0001Q44 VTB Process Photodiodes IVCT 3T4 VTB5050UVJ, 1UVJ E G & G VACTEC PACKAGE DIMENSIONS neh (mm) PRODUCT DESCRIPTION CASE U A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planarsilicon photodiode in athree lead TO-5 package with a UV transmitting
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3030bCH
0001Q44
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8x1013
UV led 200 nm peak
uv led 365
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VTB5051UVJ
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Abstract: No abstract text available
Text: 303Db 0T 0 0 0 1 0 4 4 3T4 • VCT SbE D VTB5050UVJ, 1UVJ VTB Process Photodiodes 4 1 -S I E G & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a three lead TO-5 package with a UV transmitting "flat" window. Chip is isolated from
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5041J
Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
Text: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with
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365nm,
at220nm.
100mW/cm'
200mW/cmJ
5041J
photodiode vtb 5041
VTB8440B
operational amplifier-741
thermopile array
5050J
VTB1013B
VTB8444B
9415B
VTB1012B
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