VT90N4 Search Results

VT90N4 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
VT90N4	PerkinElmer Optoelectronics	Photoconductive cell.	Original	PDF
VT90N4	EG&G Vactec	Photoconductive Cell	Scan	PDF
VT90N4	PerkinElmer Optoelectronics	VT900 Series: Photoconductive Cells	Scan	PDF

VT90N4 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
VT90N2 Abstract: VT90N1 VT93N1 VT900 VT90N3 VT93N2 VT905G VT90N4 VT93N3 VT93N4 Text: VT900 Series PHOTOCONDUCTIVE CELL PACKAGE DIM EN SIO NS inch mm 1.38 (35.05) .070 (1.78) .144 (3.66) AWG 24 TINNED COPPER LEADS LEAD DIA. & PLASTIC COATING NOT CONTROLLED WITHIN .10 (2.5) OF CERAMIC SUBSTRATE. PLASTIC COATED TO PROTECT ACTIVE SURFACE ABSOLUTE M AXIM UM RATINGS	OCR Scan	VT900 R10/R100) VT90N4 VT905G VT93N1 VT93N2 VT93N3 VT93N4 VT935G VT90N2 VT90N1 VT90N3 VT905G	PDF
VT90N1 Abstract: VT90N2 VT93N1 VT900 300-k VT905G VT90N3 VT90N4 VT93N2 VT93N3 Text: VT900 Series PHOTOCONDUCTIVE CELL PACKAGE DIM EN SIO NS inch mm 1.38 (35.05) .070 (1.78) .144 (3.66) AWG 24 TINNED COPPER LEADS LEAD DIA. & PLASTIC COATING NOT CONTROLLED WITHIN .10 (2.5) OF CERAMIC SUBSTRATE. PLASTIC COATED TO PROTECT ACTIVE SURFACE ABSOLUTE M AXIM UM RATINGS	OCR Scan	VT900 R10/R100) Min85 VT90N4 VT905G VT93N1 VT93N2 VT93N3 VT93N4 VT935G VT90N1 VT90N2 300-k VT905G VT90N3	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

Original

10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

PDF

VT90N2

Abstract: VT90N1 VT93N1 VT900 VT90N3 VT93N2 VT905G VT90N4 VT93N3 VT93N4
Text: VT900 Series PHOTOCONDUCTIVE CELL PACKAGE DIM EN SIO NS inch mm 1.38 (35.05) .070 (1.78) .144 (3.66) AWG 24 TINNED COPPER LEADS LEAD DIA. & PLASTIC COATING NOT CONTROLLED WITHIN .10 (2.5) OF CERAMIC SUBSTRATE. PLASTIC COATED TO PROTECT ACTIVE SURFACE ABSOLUTE M AXIM UM RATINGS

OCR Scan

VT900 R10/R100) VT90N4 VT905G VT93N1 VT93N2 VT93N3 VT93N4 VT935G VT90N2 VT90N1 VT90N3 VT905G

PDF

VT90N1

Abstract: VT90N2 VT93N1 VT900 300-k VT905G VT90N3 VT90N4 VT93N2 VT93N3
Text: VT900 Series PHOTOCONDUCTIVE CELL PACKAGE DIM EN SIO NS inch mm 1.38 (35.05) .070 (1.78) .144 (3.66) AWG 24 TINNED COPPER LEADS LEAD DIA. & PLASTIC COATING NOT CONTROLLED WITHIN .10 (2.5) OF CERAMIC SUBSTRATE. PLASTIC COATED TO PROTECT ACTIVE SURFACE ABSOLUTE M AXIM UM RATINGS