Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    VR PHOTO Search Results

    VR PHOTO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPS65561RGTR Texas Instruments Integrated Photo Flash Charger and IGBT Driver 16-VQFN -35 to 85 Visit Texas Instruments Buy
    TPS65561RGTT Texas Instruments Integrated Photo Flash Charger and IGBT Driver 16-VQFN -30 to 85 Visit Texas Instruments Buy
    TPS65560RGTT Texas Instruments Integrated Photo Flash Charger and IGBT Driver 16-VQFN -35 to 85 Visit Texas Instruments Buy
    TPS65563ARGTT Texas Instruments Integrated Photo Flash Charger and IGBT Driver 16-VQFN -35 to 85 Visit Texas Instruments Buy
    TPS65560RGTR Texas Instruments Integrated Photo Flash Charger and IGBT Driver 16-VQFN -35 to 85 Visit Texas Instruments Buy

    VR PHOTO Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PNZ335

    Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
    Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)


    Original     		PNA3W01L PN307) PNZ313 PN313) PNZ300F PN300F) PNZ313B PN313B) PNZ323 PN323) PNZ335 PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F PDF

    KPIN1041E01

    Abstract: S7911 S7912 SE-171
    Text: PHOTODIODE Si PIN photodiode S7911, S7912 High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage S7911: fc=2 GHz VR=2 V S7912: fc=1.5 GHz (VR=2 V) l Low terminal capacitance S7911: Ct=0.45 pF (VR=2 V)


    Original     		S7911, S7912 S7911: S7912: SE-171 KPIN1041E01 KPIN1041E01 S7911 S7912 PDF

    KPIN1041E02

    Abstract: S7911 S7912 SE-171
    Text: PHOTODIODE Si PIN photodiode S7911, S7912 High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage S7911: fc=2 GHz VR=2 V S7912: fc=1.5 GHz (VR=2 V) l Low terminal capacitance S7911: Ct=0.45 pF (VR=2 V)


    Original     		S7911, S7912 S7911: S7912: SE-171 KPIN1041E02 KPIN1041E02 S7911 S7912 PDF

    GM2HS

    Abstract: GM7VHR germanium photodiode PIN germanium Germanium power GM8HS Germanium Power Devices
    Text: E Ge pn Detectors Electrical Characteristics @ 25 °C TYPE ACTIVE SHUN T R E S DARK CURRENT TEST REVERSE MAX REVERSE CAPACITANCE DIA. @Vr= 10mV @Vr=Vtest BIAS VOLTS @Vr MAX K A Min. Typ. (HA MAX.) (Volts) (Volts) (mm.) GM2 0.5 SQ. CUT-OFF FREQ. (pW/VHz) @Vr, 50QRL


    OCR Scan     		50QRL MIL-45208 MIL-S-19500 MIL-S-19500. MIL-STD-883, GM2HS GM7VHR germanium photodiode PIN germanium Germanium power GM8HS Germanium Power Devices PDF

    Untitled

    Abstract: No abstract text available
    Text: SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS ϕ deg. Radiant sensitive area mm2 IP VR = 5 V λ = 870 nm 1 mW/cm2 µA 5.1.3 im Plastikgehäuse mit Filter für 950 nm IRED IR (VR = 10 V) λ10% tr,tf (VR = 20 V, RL = 50 Ω) nA nm ns Ordering code


    Original     		Q62702-P84 Q62702-P929 Q62702-P102 Q62702-P5052 PDF

    BPW34S

    Abstract: Q62702-P1794 bpw 104
    Text: SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS ϕ Radiant sensitive area deg. mm2 IP λ = 950 nm, Ee = 1 mW/cm2, VR = 5 V µA IR (VR = 10 V) λ10% tr,tf (VR = 20 V, RL = 50 Ω) nA nm ns 2.2 SMT-Dioden 2.2 SMT-Diodes 2.2.1 SMT PIN Fotodioden 2.2.1 SMT-PIN Photodiodes


    Original     		Q62702-P1605 Q62702-P1602 E9087 Q62702-P1790 Q62702-P1601 Q62SMT-Dioden BPW34S Q62702-P1794 bpw 104 PDF

    bpw 104

    Abstract: photodiode 1100 nm 104 b diode diode 22 16 BPW 34 FAS BP 104 FAS
    Text: SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS ϕ Radiant sensitive area deg. mm2 IP λ = 950 nm, Ee = 1 mW/cm2, VR = 5 V µA IR (VR = 10 V) λ10% tr,tf (VR = 20 V, RL = 50 Ω) nA nm ns 2.2 SMT-Dioden 2.2 SMT-Diodes (cont’d) 2.2.2 SMT-PIN-Fotodioden mit Filter


    Original     		Q62702-P1646 Q62702-P1604 Q62702-P463 E9087 Q62702-P1826 Q62702-P1829 Q62702-P1795 Q62702-P5030 Q62702-K47 Q62702-P5313 bpw 104 photodiode 1100 nm 104 b diode diode 22 16 BPW 34 FAS BP 104 FAS PDF

    acer laptop battery pinout

    Abstract: PCT303W str f 6655 hp laptop battery pinout circuit diagram wireless spy camera car ecu microprocessors RS -24V SDS RELAY difference between rtos psos vx works c executive NEC BONITO bird bell mini project
    Text: VR Series Catalog 2000 64-bit MIPS Processors 17K, 75X, 78K, V850, VR Document No. U14705EE1V0PF00 2000 NEC Electronics Europe GmbH. Printed in Germany. All rights reserved. VR Series, VR4121, VR4122, VR4181, VR43xx, VR5000, VR5432, VRC4172, VRC4173, Ravin,


    Original     		64-bit U14705EE1V0PF00) VR4121, VR4122, VR4181, VR43xx, VR5000, VR5432, VRC4172, VRC4173, acer laptop battery pinout PCT303W str f 6655 hp laptop battery pinout circuit diagram wireless spy camera car ecu microprocessors RS -24V SDS RELAY difference between rtos psos vx works c executive NEC BONITO bird bell mini project PDF

    car ecu microprocessors

    Abstract: VRC4173 green hills ppc compiler manual PCT303W VRC4172 D4047 alu 9308 d green hills compiler options oem v850 difference between rtos psos vx works c executive 216MIPS
    Text: VR Series Catalog 2000 64-bit MIPS Processors 17K, 75X, 78K, V850, VR Document No. U14705EE1V0PF00 2000 NEC Electronics Europe GmbH. Printed in Germany. All rights reserved. VR Series, VR4121, VR4122, VR4181, VR43xx, VR5000, VR5432, VRC4172, VRC4173, Ravin,


    Original     		64-bit U14705EE1V0PF00) VR4121, VR4122, VR4181, VR43xx, VR5000, VR5432, VRC4172, VRC4173, car ecu microprocessors VRC4173 green hills ppc compiler manual PCT303W VRC4172 D4047 alu 9308 d green hills compiler options oem v850 difference between rtos psos vx works c executive 216MIPS PDF

    detector inas

    Abstract: No abstract text available
    Text: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO


    Original     		13PD55 13PD75 13PD75LDC 13PD100 13PD150 35PD300 35PD300LDC 2PD250 detector inas PDF

    fototransistor BPW 39

    Abstract: BPW21 photodetectors Q62702P945 SFH 3410 BPX 48 fototransistor
    Text: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 6. Fotodetektoren für spezielle Anwendungen Package Type ϕ Radiant sensitive area deg. mm2 6. Photodetectors for Special Applications IP IR VR = 10 V Sλ rel tr,tf (VR = 5 V) µA nA % µs 6.1 Blau-empfindliche Fotodiode


    Original     		Q62702-P945 Q62702-P1601 Q62702-P270 Q62702-P17-S1 Q62702-P305 fototransistor BPW 39 BPW21 photodetectors Q62702P945 SFH 3410 BPX 48 fototransistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SPV1001N Cool bypass switch for photovoltaic applications Features • SPV1001N30 IF=12.5 A, VR=30 V ■ SPV1001N40 IF=12.5 A, VR=40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ 150 °C operating junction temperature Anodo Catodo


    Original     		SPV1001N SPV1001N30 SPV1001N40 SPV1001N PDF

    SPV1001N

    Abstract: SPV1001N30 SPV1001N40
    Text: SPV1001N Cool bypass switch for photovoltaic applications Features • SPV1001N30 IF=12.5 A, VR=30 V ■ SPV1001N40 IF=12.5 A, VR=40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ 150 °C operating junction temperature Anodo Catodo


    Original     		SPV1001N SPV1001N30 SPV1001N40 SPV1001N PDF

    Untitled

    Abstract: No abstract text available
    Text: SPV1001N Cool bypass switch for photovoltaic applications Features • SPV1001N30 IF=12.5 A, VR=30 V ■ SPV1001N40 IF=12.5 A, VR=40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ 150 °C operating junction temperature Anodo Catodo


    Original     		SPV1001N SPV1001N30 SPV1001N40 SPV1001N PDF

    2CL25

    Abstract: 2CL77 2CL91 2CL24 2CL70 1A7 Zener SMD LL4001 BA151 HVP320 2CL75
    Text: Diodes Fast Switching Rectifiers LL4148 Vrm=100V;Ifsm=500mA 1N4148B/P T/R (T/B) Vr=100V;Ifm=0.5A MinIMELF(SOD 80) DO 41 General Purpose Rectifiers LL4001 4007 NEW Vrm=50 1000V; Ifsm=1.0A MELF 1N4001 4007(B/P)(T/R)(T/B) Vr=50 1000V; Ifm=1.0A DO 41 1A7 Vr=1200V; Ifm=1.0A


    Original     		LL4148 500mA 1N4148B/P LL4001 1N4001 EM516 1N5391 1N5399 1N5400 1000Ifm 2CL25 2CL77 2CL91 2CL24 2CL70 1A7 Zener SMD LL4001 BA151 HVP320 2CL75 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)


    Original     		G8198 G8198-01: G8198-02: SE-171 KIRD1028E02 PDF

    G8198

    Abstract: G8198-01 G8198-02 SE-171
    Text: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)


    Original     		G8198 G8198-01: G8198-02: G8198-01 G8198-02 SE-171 KIRD1028E01 G8198-01 G8198-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)


    Original     		G8198 G8198-01: G8198-02: G8198-01 G8198-02 SE-171 KIRD1028E02 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)


    Original     		G8198 G8198-01: G8198-02: G8198-01 G8198-02 55phone: SE-171 KIRD1028E01 PDF

    G8198

    Abstract: G8198-01 G8198-02 SE-171 photodiode 1 Gbps 1.55 p-i-n photodiode 10 Ghz
    Text: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)


    Original     		G8198 G8198-01: G8198-02: G8198-01 G8198-02 SE-171 KIRD1028E01 G8198-01 G8198-02 photodiode 1 Gbps 1.55 p-i-n photodiode 10 Ghz PDF

    5012PD

    Abstract: L028 fyl-3522xx 4802PD L027 35-22p L026
    Text: SILICON PHOTO DIODES Open circuit Short Circuit Reverse Dark Reverse Light Reverse Break voltage Current Current Current Down Voltage VOC (ISC) ID(R) (IL) (VBR) Max.(nA) Typ.(uA) Min.(V) VR=10V VR=5V IR=100uA Part No. Package FYL- Typ.(mV) Typ.(uA) 3 L-026


    Original     		100uA 5012PD 3522PD 4802PD L-026 FYL-5012xx L-027 L-028 FYL-3522xx 5012PD L028 4802PD L027 35-22p L026 PDF

    CL 6503

    Abstract: HPDR3K-15A n050
    Text: Photodiodes RoHS Conformity Ta=25cC Device No Lens Color Sensitive Open Dark Current Wavelength Circuit MAX A.p(nm) A-(nm) Voc(v) Id(nA) Light Current (typ) View Angle VR(V) IP(uA) VR(V) Ev 291/2 1000Lux 40 1000LUX 40 O.Smw/ciri2 50 12.0 min 4.6P -0.9 -1.75


    OCR Scan     		1000LUX HPDR3K-15A HPDR3K-45A 1000LUX CL 6503 n050 PDF

    HPDB1B-48D

    Abstract: HPDB5K-15A HPDB3J-14D HPDR3K-15A HPDR3K-45A hpdb5 HPDB5-14D-B
    Text: Photodiodes Ta=250C Sensitive Open Dark Current Light Current typ Device No HPDB1-48D Lens Color Waterclear Wavelength Circuit Xp(nm) X(nm) 900 500-1100 (MAX) Angle VR(V) IP(uA) VR(V) Ev 291/2 30 10 10 10 1000LUX 40 30 10 10 10 1000LUX 40 Voc(v) Id(nA) 0.39


    OCR Scan     		1000LUX HPDB1-48D HPDB1b-48D HPDB3J-14D HPDB3b-14D HPDB5-14D-B HPDB5K-15A HPDR3K-15A HPDR3K-45A hpdb5 PDF

    hpdb5

    Abstract: HPDB5K-15A HPDB1b-48D HPDB5-14D-B HPDB3B HPDB1-48D HPDR3K-15A
    Text: Photodiodes o Ta=25 C Device No Lens Color Sensitive Open Dark Current Wavelength Circuit MAX lp(nm) Voc(v) Id(nA) l(nm) View Light Current (typ) Angle VR(V) IP(uA) VR(V) 2q1/2 Ev 25.0 min 0.4 0.5 1.1 2.25 HPDMIB-4D Water clear 900 500~1100 0.39 2.75 1.85


    Original     		1000Lux HPDB1-48D -14D-B HPDB5K-15A HPDR3K-15A HPDR3K-45A hpdb5 HPDB5K-15A HPDB1b-48D HPDB5-14D-B HPDB3B HPDB1-48D HPDR3K-15A PDF