C965 transistor
Abstract: transistor c965 transistor c964
Text: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses
|
OCR Scan
|
PDF
|
CPV362MK
360Vdc,
C-970
C965 transistor
transistor c965
transistor c964
|
Untitled
Abstract: No abstract text available
Text: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
|
OCR Scan
|
PDF
|
IRGBC20M
10kHz)
TQ-220AB
5545E
|
LE C346
Abstract: No abstract text available
Text: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
|
OCR Scan
|
PDF
|
IRGBC30M-S
10kHz)
SMD-220
C-346
4flS54S2
002013b
LE C346
|
Untitled
Abstract: No abstract text available
Text: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz
|
OCR Scan
|
PDF
|
IRGPC60M
10kHz)
|
IRGBC36
Abstract: IRGBC46 IRGBC30 THOMSON 58E 02073 IRGPC50 IRGPC56 IRGPC THOMSON DISTRIBUTOR 58e d IRGBC20
Text: T H OH SO N/ ^D 2b a? 3 D O G S ? T b 4T4 • SflE D DISTRIBUTOR TCSK International llORl Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes VcE oo VQE(Ui) Gate to Emlttar Threshold Vottage Collector to Emitter Sateratkm Max (V) Typ 00
|
OCR Scan
|
PDF
|
IRGBC20
IRGBC26
IRGBC30
IRGBC36
IRGBC40
IRGBC46
IRGPC40
IRGPC46
IRGPC50
IRGPC56
IRGBC36
IRGBC46
THOMSON 58E
02073
IRGPC56
IRGPC
THOMSON DISTRIBUTOR 58e d
|
TRANSISTOR C307
Abstract: transistor c308
Text: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
|
OCR Scan
|
PDF
|
IRGBC30M
10kHz)
C-311
O-22QAB
C-312
0201G2
TRANSISTOR C307
transistor c308
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: 3 TYP N— — N -T A B # 1 10 t=0.5 Q —m - h K- i ' I i N -O ü -O lü - -O Low Drive Power □ □ Low VQE(sat) Discrete Super-Fast Recovery Free-Wheel Diode
|
OCR Scan
|
PDF
|
CM300DY-24H
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. U n it in mm 1S.8±0.5. 03.6±O.2 • • H ig h sp e e d • Low Satu ration Voltage : VQE say = 3.4V (Max. • 3-5 High Input Impedance
|
OCR Scan
|
PDF
|
GT40M101
|
Untitled
Abstract: No abstract text available
Text: MCROPAC IN D U S T R IE S IN C 1 SE D • tllg tk O O O O O tn t S ■ „P I PHYSICAL DESCRIPTION OPTICAL/ELECTRICAL CHARACTERISTICS AT 25° C PARAMETER LIGHT CURRENT DARK CURRENT TEST CONDITION VQE “ 5 V * H = 9 m W /on’ t VCE = 30 V H=0 1C = IDOpA SYMBOL
|
OCR Scan
|
PDF
|
1000Q
|
Untitled
Abstract: No abstract text available
Text: SILICON PN P T R IP LE D IFFUSED T Y P E 2 S B 1 4 H U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. • & 3.2 ± 0.2 W - High DC Current Gain : hp>E = 1500 M in . (V q • 10±Q.3 e= - 3V, I c = - 1 A ) Low Saturation Voltage : VQE(say = —1.5V (Max.) ( I c = — 1A)
|
OCR Scan
|
PDF
|
2SB1411
|
siemens 314S
Abstract: BUP 314S 314S
Text: SIEMENS BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Type ^CE BUP314S 1200V 25A h Package Ordering Code TO-218 AB C67040-A4207-A2 Maximum Ratings Parameter
|
OCR Scan
|
PDF
|
BUP314S
O-218
C67040-A4207-A2
Feb-07-1997
siemens 314S
BUP 314S
314S
|
diode lt 238
Abstract: 21N60ED
Text: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced
|
OCR Scan
|
PDF
|
MGW21
N60ED/D
MGW21N60ED/D
diode lt 238
21N60ED
|
Untitled
Abstract: No abstract text available
Text: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V
|
OCR Scan
|
PDF
|
IRG4IBC20KD
25kHz
T0-220
|
Untitled
Abstract: No abstract text available
Text: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values
|
OCR Scan
|
PDF
|
00R600KF3
34G3SR7
|
|
|
Untitled
Abstract: No abstract text available
Text: SOLI» STATE DEVICES INC 15E D |i3ttQll DD02071 S | T - 33-11 2N5002 AND 2N5004 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS CASE STYLE X JEDEC TO—59 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807
|
OCR Scan
|
PDF
|
DD02071
2N5002
2N5004
2N5003
2N5005
|
transistor iqr
Abstract: No abstract text available
Text: PD -9.1690 International IO R Rectifier IRG4IBC30KD PREUMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating lOps @ 125°C, Vge = 15V
|
OCR Scan
|
PDF
|
IRG4IBC30KD
25kHz
O-220
T0-220
transistor iqr
|
15QQ
Abstract: T0320 iCR 406 J
Text: International ZQR Rectifier PD 9.1601 IRG4BC20FD PREUMINART INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .
|
OCR Scan
|
PDF
|
IRG4BC20FD
00nof3tion
T0-220AB
15QQ
T0320
iCR 406 J
|
Untitled
Abstract: No abstract text available
Text: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,
|
OCR Scan
|
PDF
|
485S4S2
|
Untitled
Abstract: No abstract text available
Text: International IQR Rectifier PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
OCR Scan
|
PDF
|
IRG4BC20U
O-22QAB
100eters
|
transistor 2222a
Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B
|
OCR Scan
|
PDF
|
Q68000-A6481
OT-23
EHN0005
EHN00056
10CK2,
Jan-22-1999
transistor 2222a
transistor 2222a CURRENT GAIN
2222a sot23
2222A transistor
|
Untitled
Abstract: No abstract text available
Text: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module
|
OCR Scan
|
PDF
|
2Q0R06KL2/2
34G32T7
D0G2047
|
irg4
Abstract: IRG4RC10U
Text: International IGR Rectifier PD - 9 .1 5 7 2 IRG4 RC10U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
OCR Scan
|
PDF
|
RC10U
O-252AA
EIA-481
irg4
IRG4RC10U
|
transistor IR 840
Abstract: OZ930
Text: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
|
OCR Scan
|
PDF
|
IRG4BC20UD
T0220AB
transistor IR 840
OZ930
|
transistor c374
Abstract: transistor c373 transistor c377
Text: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses
|
OCR Scan
|
PDF
|
IRGBC30MD2-S
10kHz)
high-volta379
SMD-220
C-380
transistor c374
transistor c373
transistor c377
|
