VQB 28 E Search Results

diode 1n4007

Abstract: VQB 28 E vqb 15 0485400000 Diode -1N4007 diode,1N4007 diode 1N4007 terminal Diode 1N4007 vh
Contextual Info: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly w ell-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring pow er to the

Contextual Info: DLI 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE Multiple Level Sensor Multiple Level Sensor Multiple Level Sensor & Ground Multiple Level Sensor & Ground Dual Level & Ground 1595950000 1565970000 1578550000 1578560000 1578530000 1578540000 1578570000

VQB 24 E

Abstract: VQB 28 E VQb 28 0485400000 vqb 15
Contextual Info: D LI 2 .5 LD P N P D L I 2 .5 LD N P N D L A 2 .5 D LA 2 .5 D D L D 2 .5 PE j ß o-#o 0 — 4, o-H ZH Multiple Level Sensor C_> o— •—o k" o -*Q — ' °¿ r° T_r Multiple Level Sensor -,_ r C -j Multiple Level Sensor & Ground C_J T_r Multiple Level Sensor

hp 2212

Abstract: 1783550000
Contextual Info: D U 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE °¿F ° o-*o 0 - 9— O o-»CH ° “ L ° ~ l Part No. M ultiple Level Sensor & Ground Part No. Dual Level & Ground Part No. Part No. 1783560000 1783790000 1783980000 1783950000 1783600000 1783970000

21134 transistor

Abstract: RF1029 21134 case 244c-01 21134 npn RF NPN POWER TRANSISTOR 3 GHZ 5w
Contextual Info: MOTOROLA SC XSTRS/R F 4bE MOTOROLA •I D ■ b3b75S4 O D 'îSIS b _ SEMICONDUCTOR 7 HNOTb 7 ^3 3 ' 0 5 TECHNICAL DATA The RF Line UHF P o w e r T ran sisto r . . . d e sig n e d p rim a rily fo r w id e b a n d , la rg e -sig n a l o u tp u t a n d d riv e r a m p lifie r stages to

diode 1n4007

Abstract: diode,1N4007 diode 1N4007 terminal Diode -1N4007 DLD 2.5 Diode Marking 1N4007 1317660000 of 1n4007
Contextual Info: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly well-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring power to the

VQB 28 E

Abstract: 1615280000
Contextual Info: Feed Through Terminals VLI 1.5 PE VLI 1.5 •M 't& fr ^ ' ■J\ ^ 'i _ MAK 2.5 J - c>-2 d o - o o ° - o M ultiple Level Sensor M ultiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Version 1_r

CT1012

Abstract: Sd80-02 TIC 107
Contextual Info: SD5000, SD5001, SD5002 Universal Semiconductor N -C hannel E nhancem ent Mode Quad D-Mos F E T A nalog S w itch A rra y s O rdering Inform ation Description 20V , 500 10V, 500 15V, 50 0 16-Pin Plastic DIP 16-Pin Cerdip Gold-Backed Chips in Waffle Pack SD5000N

LL250

Contextual Info: Feed Through Terminals VLI 1.5 V LI 1.5 PE M A K 2 .5 jm t W r ip s Ä 0 — — —0 o -o — °~^r -O Multiple Level Sensor Multiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Available Options Dimensions

bvoe

Abstract: TSC* 7 VQB 28 E
Contextual Info: TELEDYNE COMPONENTS 3bE D ITSC 3^171,02 QGG7Ô14 7 WTELEDYNE COMPONENTS SD5400 SD5401 SD5402 QUAD DMOS FET ANALOG SWITCH ARRAYS FEATURES APPLICATIONS • ■ ■ ■ ■ ■ Low Interelectrode Capacitances — Analog Input.3.5 pF Typ

wiring VDG 13 relay

Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738

wiring VDG 13 relay

Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Contextual Info: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface

vqb 71

Abstract: 074I sem 304 SD50G1
Contextual Info: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package

MM8009

Abstract: MM8008 MM8010 MM8011 38-to-38 1031W
Contextual Info: MM8009 silicon NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m u ltip lie r, or oscillator applica­ tions in m ilita ry and industrial equipment. Suitable fo r use as output, driver, or pre-driver stages in UHF equipm ent and as a fundamental

2SC4247

Contextual Info: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4247 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • 2.1 ±0.1 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: UN I V E R S A L S E M I C O N D U C T O R 4TE D • T3t.a3Ml 0 G D Q 1Q 7 22fi ■ UNIVERSAL UNV SD5000, SD5001, SD 5002 N-Channel Enhancement Mode Quad D-Mos FET Analog Switch A rrays O rd ering Inform ation D e s c rip tio n 20V, 500 1 0 V , sou 1 5 V , SOU

D147D

Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Contextual Info: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC

3SD21

Abstract: tt 2144 bv ui 302 0220
Contextual Info: TELEDYNE COMPONE NTS EflE D Ml fi'ilTbaa QQ0b3fi3 1 M _ - r - 3 , z -y 1 0 2 1 0 ,8 0 2 1 1 ,5 0 2 1 2 , SD 2 1 3 ,S D 2 1 4 ,S D 2 1 5 SEM IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION

MRF393

Contextual Info: ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon Push-Pull RF Power TVansistor MRF393 . . . designed primarily for wideband large-signal output and driver amplifier

TAG 600

Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Contextual Info: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect

E720BXF

Abstract: EDGE720 E720BXF EDGE Edge710 EVM720BXF
Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load HIGH-PERFORMANCE PRODUCTS – ATE Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range

motorola TE 901

Abstract: MK1V135 2N390S MC14404
Contextual Info: bbE D MOTOROLA I b3b?s s3 ooaaa'ifl Mai « d o t s MOTOROLA SC TELECOM SEMICONDUCTOR TECHNICAL DATA MC3419-1L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . designed as the heart o f a c ircu it to p rovide B O R SH Tfunctions fo r telephone service in Central O ffice, PABX, and S ubscriber Car­

motorola 9100-11

Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Contextual Info: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides