0427
Abstract: 2410L VP2410L MMA6
Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
2410L
O-226AA)
S-04279--Rev.
16-Jun-01
0427
2410L
VP2410L
MMA6
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2410L
Abstract: VP2410L
Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
2410L
18-Jul-08
2410L
VP2410L
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VP2410L
Abstract: No abstract text available
Text: VP2410L P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2410L –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
O-226AA)
P-38283--Rev.
15-Aug-94
VP2410L
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VP2410L
Abstract: No abstract text available
Text: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
O-226AA)
S-52426--Rev.
14-Apr-97
VP2410L
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VP2410L
Abstract: No abstract text available
Text: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
O-226AA)
S-52426--Rev.
14-Apr-97
VP2410L
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5262
Abstract: VP2410L
Text: VP2410L Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2410L -240 10 @ VGS = -4.5 V -0.8 to -2.5 -0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O226AA
O226AA)
P-38283--Rev.
5262
VP2410L
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Untitled
Abstract: No abstract text available
Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
2410L
08-Apr-05
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One-chip telephone IC
Abstract: telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU
Text: TEMIC Semiconductors Communication Segment Digital Networks Wireless Communication Wired Communication Communication We’ve been supporting advances in communications industry for decades. Today, we continue to offer the best combination of applications knowledge and leading-edge solutions required by the
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29C93A
102/V
V25bis)
PQFP44
29C93A
29C921
80C51
One-chip telephone IC
telephone line voice amplifier
Voice to e1 converter circuit
U 4076
One-chip telephone cordless IC
VN2410* mosfet
BFP67
slc96 remote terminal
E1 PCM encoder
V30 CPU
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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mosfet cross reference
Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
Text: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G
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2N6660
IRFF110
VN2210N2
VN0605T
TN2106K1-G
ZVN0540A
VN0550N3-G
2N6661
mosfet cross reference
bs170 replacement
VN10KM replacement
CROSS REFERENCE 2n6661
BST72A replacement
BSN10 "cross reference"
BST72A CROSS
equivalent of BS250
ZVNL110A cross reference
vn10km cross
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FET package TO-71
Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
Text: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25
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O-226AA
VP0808L
VP1008L
TP1220L
BSS92
VP2020L
TP2020L
VP2410L
O-206AF
3N164
FET package TO-71
SST271
2N4416A JANTX
TO72 package n-channel jfet
jfet 2N5198
3N164
BSS92
TP2020L
VP0808L
VP2020L
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TEMIC K153P
Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2
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WN1053
WN1087-18R
WN1087-TR1
WN1090
WN1125
WN1142
WN1158-TA
WN1165-TR1
WN1170
WN934
TEMIC K153P
TSHF5471
tfmw5380
dn1328
tdsr5156
dn904
TDSR5153
HS0038 IR sensor
TLVD4900
TCDF1910
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VP2410
Abstract: VP2410L marking LD VISHAY
Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) -2 4 0 fDSIon) Max (Q) VGs<.h)(V) Id (A) 10 e V q s = - 4 .5 V -0 .8 to -2 .5 -0 .1 8 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • High-Side Switching
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VP2410L
O-226AA
2410L
S-04279--
16-Jun-01
O-226AA)
VP2410
VP2410L
marking LD VISHAY
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B0815
Abstract: vp2410
Text: Temic P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number V BR DSS VP2410L Mín (V) -240 rn s^ n ) Max (Q) (V) Id (A) -0 .8 to -2 .5 -0.18 VGS(th) 10 @ VGS = -4 .5 V Features Benefits
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VP2410L
O-226AA
P-38283--Rev.
O-226AA)
B0815
vp2410
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Untitled
Abstract: No abstract text available
Text: T e m ic VP2410L Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number VP2410L V BR DSS Mi» (V) -240 Features • • • • • High-Side Switching Secondary Breakdow n Free: —255 V Low On-Resistance: 8 CÏ Low-Power/Voltage Driven
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VP2410L
O-226AA
P-38283--Rev.
O-226AA)
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VP2410
Abstract: No abstract text available
Text: VPDV24 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • BS208 TP2410L, TP2010L VP2410L Single Chip • Available as VPDV2CHP SÖ.xd DEVICE TYPICAL CHARACTERISTICS O u tp u t C h a ra cte ristics fo r Low G a te Drive (m A) -2 -3
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VPDV24
O-226AA)
BS208
TP2410L,
TP2010L
VP2410L
VPDV24
VP2410
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VP2410
Abstract: No abstract text available
Text: VP2410L P-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA V(BR)DSS "W >D (A) -240 10 -0.18 Performance Curves: VPDV24 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN 3 ,l— I—-i 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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VP2410L
O-226AA)
VPDV24
lim10
VP2410
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11105 IC
Abstract: No abstract text available
Text: Tem ic VP2410L S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) IDS«,) Max (Q) V GS<lh) (V) I d (A) -2 4 0 10 @ V o s = - 4 .5 V -0 .8 t o -2 .5 -0 .1 8 Features Benefits Applications • • •
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VP2410L
-226A
S-52426--
14-Apr-97
O-226AA)
11105 IC
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p-channel mosfet bss92
Abstract: vishay siliconix code marking to-92 bss92 70210 VP2410
Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V ) rDS(on) Max ( Q ) VGS<th) (V ) I d (A) VP2020L -2 0 0 20 @ V q s = -4 .5 V -0 .8 to -2 .5 -0 .1 2 BSS92 -2 0 0 20 @ V qs = - 1 0 V -0 .8 t o -2 .8 -0 .1 5
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VP2020L,
BSS92
VP2020L
O-226AA
2410L
S-04279--
16-Jun-01
p-channel mosfet bss92
vishay siliconix code marking to-92
bss92
70210
VP2410
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VP2410
Abstract: No abstract text available
Text: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L
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VP0808B/L/M
VP1008B/L/M
VQ2004J
\/PDV10
VQ2006J
VPDV10
TP2010L
TP2410L
VP2410L
VPDV10
VP2410
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ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request
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ZVP2106C
ZVP2110A
ZVP2110C
ZVP2120A
ZTX788B
ZVP2120C
ZVP3306A
ZVP3310A
ZVP4105A
2110C
ZTX752 equivalent
transistor 42-10a data
BC369
FXTA92
BSS98
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N-Channel JFET FETs
Abstract: T072
Text: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60
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T0220
T0237
T0226AA
VP0300L
BS250
VP0610L
P06I0L
VP0808L
VP1008L
TP1220L
N-Channel JFET FETs
T072
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