Untitled
Abstract: No abstract text available
Text: Model IM-10RFCM-13 VISHAY Vishay Dale Inductors Commercial, Molded FEATURES • Inductance range is 1pH to 2200pH. • Proven reliability molded inductors. ELECTRICAL SPECIFICATIONS STANDARD ELEC T R IC A L SPECIFICATION S IND. M O D E L* ,UH TO L. Q MIN.
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IM-10RFCM-13
2200pH.
IM-10RFCM-13
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Untitled
Abstract: No abstract text available
Text: Model 100 VISHAY Vishay Spectrol 1 - 5/16” 33.3mm Single Turn Wirewound F recision Potentiometer FEA TU RES • 1 - 5/16” Round • Bushing or Servo • 5 to 20K E LE C T R IC A L SPECIFICATION! > PARAMETER STANDARD 5 to 20K ±3% ±5% Total Resistance:
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MIL-R-12934)
20-Nov-01
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PDF
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Untitled
Abstract: No abstract text available
Text: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power
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SiC779
SiC779
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power
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SiC769ACD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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S10011
Abstract: drMOS compatible
Text: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power
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Original
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SiC769ACD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S10011
drMOS compatible
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PDF
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Untitled
Abstract: No abstract text available
Text: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power
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Original
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SiC779
SiC779
11-Mar-11
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PDF
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Benchmark MOSFETs
Abstract: No abstract text available
Text: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power
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Original
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SiC779
SiC779
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Benchmark MOSFETs
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PDF
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Untitled
Abstract: No abstract text available
Text: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power
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Original
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SiC779
SiC779
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power
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Original
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SiC779
SiC779
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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100C
Abstract: MLP66-40 MOSFET Device Effects on Phase Node Ringing in VR SiC76 SiC769ACD
Text: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power
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SiC769ACD
18-Jul-08
100C
MLP66-40
MOSFET Device Effects on Phase Node Ringing in VR
SiC76
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PDF
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Untitled
Abstract: No abstract text available
Text: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power
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Original
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SiC779
SiC779
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SiC76
Abstract: No abstract text available
Text: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power
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Original
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SiC769ACD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SiC76
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PDF
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MLP66-40
Abstract: No abstract text available
Text: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power
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SiC769ACD
11-Mar-11
MLP66-40
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PDF
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Untitled
Abstract: No abstract text available
Text: MODEL T7R Cermet Trimmers î î ’+'î î;? VISHAY Y 1/4" [6.35mm] Round, Single Turn, Sealed, Industrial Grade FEATURES • 3 standard terminal styles • Fully sealed to withstand board washing • Top and side adjustment ELEC TR IC A L S P E C IFIC A TIO N S
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MIL-STD-202,
100PPM/Â
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5-221 dale
Abstract: CMF55 wattage rating
Text: MODEL CMF Metal Film Resistors Industrial FEATURES • • • • • • Dale Model CM F is also available as Military Qualified Styles RN and RL. See pages 9 0 - 9 2 for the MIL-SPEC ratings/attributes. Except for marking, the product in these two catalog
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CMF-50
CMF-50,
CMF-55,
CMF-60,
CMF-65,
5-221 dale
CMF55 wattage rating
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Untitled
Abstract: No abstract text available
Text: IMC-1210-100 VISHAY Vishay Dale Surface Mount, Molded Inductor FEATURES • Molded construction provides superior strength and moisture resistance. • Tape and reel packaging for automatic handling, 2000/reel, EIA481. • Printed marking. • Compatible with vapor phase and infrared reflow soldering.
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IMC-1210-100
2000/reel,
EIA481.
IMC-1210-100
28-Aug-02
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PDF
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Untitled
Abstract: No abstract text available
Text: MODELS ST-22 and ST-23 Chip Trimmers Surface Mount, .157" [4.0mm] Square Single Turn, Open Frame FEATURES • Designed for efficient, accurate miniaturization. • Can be wave or dip soldered without rotor problems. • Coded marking for easy identification of resistance value.
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ST-22
ST-23
250PPM/
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Untitled
Abstract: No abstract text available
Text: IM C-1210 Vishay Dale VISHAY Surface Mount, Molded Inductor FEATURES • Printed marking. • Compatible with vapor phase and infrared reflow soldering. • Molded construction provides superior strength and moisture resistance. • Tape and reel packaging for autom atic handling, 2000/
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C-1210
IMC-1210
10-Sep-02
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Untitled
Abstract: No abstract text available
Text: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package
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GA200HS60S1PbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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GA100TS60SF
Abstract: GA100TS60SFPbF
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery
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GA100TS60SFPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GA100TS60SF
GA100TS60SFPbF
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PDF
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GA100TS60SFPbF
Abstract: No abstract text available
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery
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GA100TS60SFPbF
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
GA100TS60SFPbF
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PDF
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GA100TS60SFPbF
Abstract: No abstract text available
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery
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GA100TS60SFPbF
E78996
2002/95/EC
11-Mar-11
GA100TS60SFPbF
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PDF
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Untitled
Abstract: No abstract text available
Text: GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 400 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse
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GA400TD60S
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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GA400TD60S
Abstract: No abstract text available
Text: GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 400 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse
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GA400TD60S
E78996
2002/95/EC
11-Mar-11
GA400TD60S
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