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    VISHAY EKM Search Results

    VISHAY EKM Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    ISL28617VY100EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY10EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY25EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation

    VISHAY EKM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7 Segment sm 42056

    Abstract: sm 42056 7 segment display sm 42056 Roederstein EK roederstein capacitor ek series Vishay Roederstein EKM en13003 Roederstein EKm 7 Segment common cathode Vishay Roederstein EBR
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd­ • radial • A xial Aluminum capacitors vishay vse-db0111-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0111-0810 7 Segment sm 42056 sm 42056 7 segment display sm 42056 Roederstein EK roederstein capacitor ek series Vishay Roederstein EKM en13003 Roederstein EKm 7 Segment common cathode Vishay Roederstein EBR

    EKM capacitors

    Abstract: Vishay Roederstein EKM Roederstein EKR Roederstein EKm EKR roederstein Vishay Roederstein EBR EkM Roederstein Vishay Roederstein EBC Vishay Sprague 674D 673D
    Text: Replacement Table Vishay SMD • RADIAL · AXIAL Aluminum Capacitors Vishay BCcomponents REPLACEMENT SERIES TABLE MATURED SERIES DESIGN REMARK REPLACEMENT SERIES 048 CLB SMD General Purpose, 105 °C 153 CRV 085 CS SMD Horizontal SMD, 85 °C 153 CRV 136 CLB


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    PDF U673D U674D 09-Jul-08 EKM capacitors Vishay Roederstein EKM Roederstein EKR Roederstein EKm EKR roederstein Vishay Roederstein EBR EkM Roederstein Vishay Roederstein EBC Vishay Sprague 674D 673D

    Roederstein EKm

    Abstract: Roederstein EKR 1/74AC 138 smd M39018 M39018/04-1170 M39018/07 M39018/09-0077M M39018/03-1241M
    Text: Replacement Table www.vishay.com Vishay SMD • RADIAL · AXIAL Aluminum Capacitors Vishay BCcomponents REPLACEMENT SERIES TABLE MATURED SERIES DESIGN REMARK REPLACEMENT SERIES 048 CLB SMD General purpose, 105 °C 153 CRV 085 CS SMD Horizontal SMD, 85 °C 153 CRV


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    PDF M39018 U676D U677D U678D U787D 01-Jul-15 Roederstein EKm Roederstein EKR 1/74AC 138 smd M39018 M39018/04-1170 M39018/07 M39018/09-0077M M39018/03-1241M

    transistor SMD p12

    Abstract: SMD 1K tapped inductor boost converter 15V zener diode small package 2 pins smd NCP1252 CRCW12060000Z0EA P10 Draloric NCP1252B smd transistor 637 EKXJ
    Text: TN1252 NCP1252 Boost and CAT4026 LED Driver Board 2010-October-04 TECHNICAL NOTE Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this design package. No licenses to ON Semiconductor’s or any third party’s Intellectual Property is conveyed by the transfer of this


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    PDF TN1252 NCP1252 CAT4026 2010-October-04 TN4026/D transistor SMD p12 SMD 1K tapped inductor boost converter 15V zener diode small package 2 pins smd CRCW12060000Z0EA P10 Draloric NCP1252B smd transistor 637 EKXJ

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n te r tec h n olo g y, I n c . I INNOVAT AND TEC O L OGY WSLP3921 and WSLP5931 N HN power metal strip resistors O 19 62-2012 Resistors - Extremely Low Resistance High Power, 5 W to 10 W, Surface-Mount Power Metal Strip® Resistors Key Benefits


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    PDF WSLP3921 WSLP5931 AEC-Q200 0MIL-STD-202, 18-Nov-10 mm/13"

    MRF282

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


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    PDF MRF282--1 MRF282SR1 MRF282--1 MRF282

    100B201JT500XT

    Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


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    PDF MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282

    top247yn

    Abstract: optocoupler 817a EE28 series transformer top247yn PIN DIAGRAM epcos 1508 IEC-6100-3-2 TOP247 EE28 bobbin transformer ee28 topswitch pfc
    Text: Design Example Report Title 20 W Single Output, Power Factor Corrected LED Driver Using TOP247YN Specification 85 VAC – 277 VAC Input 12 V 12 V - 14 V LED Array , 1.67 A Output Application LED Driver Author Power Integrations Applications Department Document


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    PDF OP247YN DER-167 top247yn optocoupler 817a EE28 series transformer top247yn PIN DIAGRAM epcos 1508 IEC-6100-3-2 TOP247 EE28 bobbin transformer ee28 topswitch pfc

    ATC100B9R1CT500XT

    Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 ATC100B6R2CT500X
    Text: Document Number: MRF5S19130H - 1 Rev. 3, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19130HR3 LIFETIME BUY Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


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    PDF MRF5S19130H MRF5S19130HR3 ATC100B9R1CT500XT 465B AN1955 MRF5S19130HR3 ATC100B6R2CT500X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


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    PDF MMRF1315N MMRF1315NR1 IS--95 7/2014Semiconductor,

    AN1955

    Abstract: ATC100B9R1CT500XT MRF5S19130H MRF5S19130HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H - 2 Rev. 4, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19130HSR3 Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


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    PDF MRF5S19130H MRF5S19130HSR3 AN1955 ATC100B9R1CT500XT MRF5S19130HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


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    PDF MRFE6S9060N MRFE6S9060NR1

    ALT1110

    Abstract: MRFE6S9060N ATC700a MRFE6S9060NR1 A113 A114 A115 AN1955 ATC100B470JT500XT C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


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    PDF MRFE6S9060N MRFE6S9060NR1 ALT1110 MRFE6S9060N ATC700a MRFE6S9060NR1 A113 A114 A115 AN1955 ATC100B470JT500XT C101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


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    PDF MRFE6S9060N MRFE6S9060NR1

    TNY260

    Abstract: EI40 transformer DER-218 TOP260EN ei40 bobbin TDK PC44 NCD332M1KVZ5U free schematic diagram of IC 4558 EE40 core transformer EE40
    Text: Design Example Report Title 100 W Refrigeration Power Supply Using TOP260EN Specification 102 – 265 VAC Input; 12 V, 8 A and 8 V, 0.4 A Outputs 0 to +40 °C Application Appliance Author Applications Engineering Department Document Number DER-218 Date April 9, 2009


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    PDF OP260EN DER-218 EN5022 TNY260 EI40 transformer DER-218 TOP260EN ei40 bobbin TDK PC44 NCD332M1KVZ5U free schematic diagram of IC 4558 EE40 core transformer EE40

    SNX-1380

    Abstract: HTB2-102-281 TNY277 equivalent TNY277 Santronics SNX 1380 TNY278 yw-360-02b YW-360-02B SNX-1380 LSPA20544 TNY279
    Text: Engineering Prototype Report for EP-91 – 12 W Power Supply using TinySwitch -III TNY278P Title Specification 85-265 VAC Input, 12 V, 1 A Output Application TinySwitch-III Reference Design (DAK-91) Author Power Integrations Applications Department Document


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    PDF EP-91 TNY278P) DAK-91) EPR-91 7-February-06 flex89 SNX-1380 HTB2-102-281 TNY277 equivalent TNY277 Santronics SNX 1380 TNY278 yw-360-02b YW-360-02B SNX-1380 LSPA20544 TNY279

    HTB2-102-281

    Abstract: EE25 bobbin TNY278PN yw-360-02b EKMX401ELL220ML20S MOSFET 818 ln TNY278 DER-228 ee25 ferrite core TNY277
    Text: Design Example Report Title 15 W Power Supply with <30 mW No-load Input Power Using TinySwitch-III TNY278P Specification 85 VAC – 265 VAC Input; 12 V, 1.25 A Output Application TinySwitch-III Reference Design Author Applications Engineering Department


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    PDF TNY278P) DER-228 HTB2-102-281 EE25 bobbin TNY278PN yw-360-02b EKMX401ELL220ML20S MOSFET 818 ln TNY278 DER-228 ee25 ferrite core TNY277

    GRM31MF51A106ZA01B

    Abstract: d5048
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to


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    PDF MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 GRM31MF51A106ZA01B d5048

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev. 4, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19150HR3 Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


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    PDF MRF5S19150H MRF5S19150HR3

    ATC100B0R5BT500XT

    Abstract: MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 MRF6S18100NR1 A113 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d


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    PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100NR1 ATC100B0R5BT500XT MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 A113 A114 A115 AN1955

    optocoupler 817a

    Abstract: top247yn RL207 equivalent diode ee28 core SU9V-03050 4 pin optocoupler 817a to220-7c EE28/10 core 817a opto coupler optocoupler L 817a
    Text: Design Example Report Title 20 W Single Output, Power Factor Corrected LED Driver Using TOP247YN Specification 85 VAC – 277 VAC Input; 12 V 12 V - 14 V LED Array , 1.67 A Output Application LED Driver Author Applications Engineering Department Document


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    PDF OP247YN DER-168 EN55015 optocoupler 817a top247yn RL207 equivalent diode ee28 core SU9V-03050 4 pin optocoupler 817a to220-7c EE28/10 core 817a opto coupler optocoupler L 817a

    465B

    Abstract: AN1955 ATC100B102JT50XT CDR33BX104AKYS MRF5S19150H MRF5S19150HR3 T491C105M050AT
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev. 4, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19150HR3 Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


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    PDF MRF5S19150H MRF5S19150HR3 465B AN1955 ATC100B102JT50XT CDR33BX104AKYS MRF5S19150H MRF5S19150HR3 T491C105M050AT

    schematic LG lcd power supply unit

    Abstract: TOP257EN lg lcd monitor circuit diagram free LG monitor lcd power supply lg lcd monitor circuit diagram LG lcd monitor power supply circuit diagram ALG220 3M1350F-1 schematic LG lcd power supply unit AIP-0156 Ef25 core
    Text: DESIGN EXAMPLE REPORT Title 35 W Power Supply Using TOP257EN Specification 90 VAC – 264 VAC Input; 13 V, 2.69 A Output Application LCD Monitor Author Applications Engineering Department Document Number DER-187 Date June 24, 2008 Revision 1.0 Summary and Features


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    PDF OP257EN DER-187 schematic LG lcd power supply unit TOP257EN lg lcd monitor circuit diagram free LG monitor lcd power supply lg lcd monitor circuit diagram LG lcd monitor power supply circuit diagram ALG220 3M1350F-1 schematic LG lcd power supply unit AIP-0156 Ef25 core

    TUBE Light Choke connection diagram

    Abstract: etd39 vertical PLC810 liteon99 PX474K31D5 PLC810PG T22148-902S yageo R68 choke LLC resonant full bridge schematic DER-212
    Text: Design Example Report Title 150 W Power Factor Corrected LLC Power Supply Using HiperPLC PLC810PG Specification 140 – 265 VAC Input; 150 W (48 V at 0.05 A – 3.125 A) Output Application LED Street Light Author Applications Engineering Department Document


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    PDF PLC810PG) DER-212 TUBE Light Choke connection diagram etd39 vertical PLC810 liteon99 PX474K31D5 PLC810PG T22148-902S yageo R68 choke LLC resonant full bridge schematic DER-212