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    VHF TRANSISTORS Search Results

    VHF TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    VHF TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bf679

    Abstract: BF680 BF 679 75176 PD 680 820Q
    Text: BF 679 • BF 680 Silizium-PNP-HF-T ransistoren Silicon PNP RF Transistors Anwendungen: BF 679: Regelbare UHF/VHF-Elngangsstufein BF 680: UHF/VHF-Oszillator und M ischerstufen Applications: BF 679: Gain controlled UHF/VHF input stages BF 680: UHF/VHF-Oscillator and m ixer stages


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    MFE201

    Abstract: MFE203 MFE201 application notes MFE202 s163h dual-gate
    Text: '' N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED M O S FIELD-EFFECT TRANSISTORS • MFE201 thru . , . depletion mode dual gate transistors designed for VHF amplifier and mixer applications, MFE203 MFE201 — VHF Amplifier MFE202 — VHF Mixer MFE203 — IF Am plifier


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    MFE201 MFE202 MFE203 MFE201, MFE201 MFE203 MFE201 application notes MFE202 s163h dual-gate PDF

    TRIMMER capacitor 5-60 pF

    Abstract: vhf linear amplifier philips carbon film resistor SC08a GP 809 Transistor 2222 philips Trimmer 60 pf BLY89 carbon resistor vk 200
    Text: VHF LINEAR Ampl. 25 W BLY89 Page 1 of 3 VHF Linear Amplifier BLY 89C There is not a personal design on this page, just I've transfered useful notes from PHILIPS RF Bipolar Transistors - Data HandBook (1993 Edition), about BLY89C VHF Power transistor, which is very popular among Amateur Radio "homebrewers".


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    BLY89) BLY89C SC08a 20and 20Settings\Administrator\My 20Documents\bly TRIMMER capacitor 5-60 pF vhf linear amplifier philips carbon film resistor SC08a GP 809 Transistor 2222 philips Trimmer 60 pf BLY89 carbon resistor vk 200 PDF

    MRF239

    Abstract: mrf239 MOTOROLA Motorola 2N6080 2N5591 MOTOROLA MRF212 MRF238 MOTOROLA MRF4070 Motorola 2N6083 MRF247 mrf237 MOTOROLA
    Text: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued C ASE 317D-01 C ASE 316-01 CASE 26-03 TO-2Q6AB VHF Applications (continued) 136-174 MHz, High-Band/VHF FM Transistors The “workhorse” VHF FM High-Band is served by Motorola with the broadest range of devices arid package combinations in


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    317D-01 2N4427 MRF604 T0-206AB MRF553 MRF607 O-205AD 2N6255 T0-205AD MRF239 mrf239 MOTOROLA Motorola 2N6080 2N5591 MOTOROLA MRF212 MRF238 MOTOROLA MRF4070 Motorola 2N6083 MRF247 mrf237 MOTOROLA PDF

    transistor marking 3em

    Abstract: MMBTH10
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product Marking Code: 3EM NPN VHF/UHF


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    MMBTH10 OT-23 100MHz, 300us, transistor marking 3em MMBTH10 PDF

    transistors cross reference

    Abstract: No abstract text available
    Text: SILICON POWER TRANSISTORS VHF TV/LINEAR TRANSISTORS SGS-THOMSON VHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed to assure maximum system availability and ruggedness.


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    SD1476 SD1458 SD1455 SD1459 SD1456* 28yed transistors cross reference PDF

    M111

    Abstract: M130 M164 SD1455 SD1456 SD1458 SD1459 SD1476 TCC3100
    Text: SILICON POWER TRANSISTORS VHF TV/LINEAR TRANSISTORS SGS-THOMSON VHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed to assure maximum system availability and ruggedness.


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    SD1476 SD1458 SD1455 SD1459 SD1456 TCC3100 M111 M130 M164 SD1455 SD1456 SD1458 SD1459 SD1476 TCC3100 PDF

    TPV3100

    Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
    Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE


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    twF150-50F HF150-50S HF250-50 HF100-28 HF220-28 HF220-50 TVU014 HF75-50S ASAT25 ASI4003 TPV3100 TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A PDF

    2SC1365

    Abstract: NE741 2sc1252 74113 NE74100
    Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 1.7 GHz The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low


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    NE74100 NE74113 NE74114 NE741 E74100) NE74114 E74100, NE74100 2SC1365 2sc1252 74113 PDF

    2N4957 JANTX

    Abstract: No abstract text available
    Text: 2N4957 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV PNP Silicon VHF-UHF Amplifier Transistors Qualified per MIL-PRF-19500/426 DESCRIPTION The 2N4957 is a military qualified silicon PNP amplifier transistor designed for VHF-UHF


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    2N4957 MIL-PRF-19500/426 2N4957 T4-LDS-0313, 2N4957 JANTX PDF

    transistors mos

    Abstract: No abstract text available
    Text: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


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    3N212 3N212 com/3n212 transistors mos PDF

    2n3632

    Abstract: No abstract text available
    Text: 2N3632 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WI. 1 of 1 Home Part Number: 2N3632 Online Store 2N3632 Diodes RF Transistors & M IC RO WAVE TRANSISTO RS VHF - UHF C LASS C WIDE BAND Integrated Circuits


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    2N3632 com/2n3632 2N3632 O-210AB PDF

    j105 transistor

    Abstract: MS1009 J108 - TRANSISTOR
    Text: MS1009 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS Features 136 – 175 MHz 28 VOLTS POUT = 125 WATTS GP = 9.2 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1009 is a silicon NPN bipolar transistor designed primarily for VHF communication applications. Gold


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    MS1009 MS1009 Temperatu15 136MHz 160MHz 175MHz j105 transistor J108 - TRANSISTOR PDF

    3N211

    Abstract: Depletion
    Text: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


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    3N211 3N211 com/3n211 Depletion PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series


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    NE74000 NE74014 NE740 NE90115 MIL-S-19500. IS12I 427SB5 PDF

    CHIP TRANSISTOR

    Abstract: gp 219 NPN planar RF transistor SD1127
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT 4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN


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    SD1127 SD1127 MSC0936 CHIP TRANSISTOR gp 219 NPN planar RF transistor PDF

    SN 74114

    Abstract: 2SC1365 ta 5732 2SC1252 s735 NE74113
    Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low distortion and noise figures make it an excellent choice for


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    NE74100 NE74113 NE74114 NE741 NE74100) NE74114 procedur64 4S7S25 00L573L SN 74114 2SC1365 ta 5732 2SC1252 s735 PDF

    Untitled

    Abstract: No abstract text available
    Text: Micmsemi m m m RF Products a Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL


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    SD1127 MSC0936 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series


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    NE74000 NE74014 NE740 NE90115 quali16 PDF

    SD1019

    Abstract: No abstract text available
    Text: SD1019 RF AND MICROWAVE TRANSISTORS VHF APPLICATIONS Features • • • • • 136 MHz 13.5 V COMMON EMITTER POUT = 30 W MIN. GAIN = 4.5 dB DESCRIPTION: The SD1019 is a 28 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications.


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    SD1019 SD1019 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF TRANSISTOR 2N918 TO-72 Metal Can Package NPN TRANSISTORS, BEST SUITED FOR LOW NOISE VHF AND VHF AMPLIFIER MIXER AND OSCILLATOR APPLICATIONS.


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    2N918 C-120 2N918Rev270701 PDF

    Untitled

    Abstract: No abstract text available
    Text: MS1327 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 136 MHz 28 VOLTS POUT = 50 WATTS GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1327 is a 28V epitaxial silicon NPN planar transistor designed primarily for VHF communications. Gold metalization


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    MS1327 MS1327 PDF

    2SC1393

    Abstract: 2SC1394 c1393 2sc13
    Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC1393,2SC1394 NPN SILICON EPITAXIAL TRANSISTOR 2SC1393 : VHF RF AMPLIFIER 2S C 1394 : VHF MIXER FOR TV TUNER FEATURES PACKAGE DIMENSIONS U nit : mm • Low NF high G pe. NF = 2.0dB TV P . Gpe = 24dB TYP. (f = 200M Hz)


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    2SC1393 2SC1394 2SC1393 200MHz, 2SC1394 c1393 2sc13 PDF

    BF362

    Abstract: TFK S 741 gain bandwidth product TFK 03 BF363
    Text: BF 362 * BF 363 Silízium-NPN-HF-Planar-Transistoren Silicon NPN RF Planar Transistors Anwendungen: BF 362: Regelbare UHF/VHF-Eingangsstufen BF 363: Selbstschw ingende M ischerstufen Applications: BF 362: Gain co ntrolled UHF/VHF input stages BF 363: S elf oscillating m ixer stages


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