VHF AMPLIFIER MODULE Search Results

Contextual Info: BGY94A MAINTENANCE TYPE _ VHF AMPLIFIER MODULE VHF am plifier module designed fo r use in portable transmitters operating from a 9.6 V supply. The module is a two-stage am plifier consisting o f n-channel FET crystals and lumped-element matching

Contextual Info: N AMER P H I L I P S / D I S C R E T E ^ 53=131 0030221 30 b BGY43 b 'l E D J APX L VHF POWER AMPLIFIER MODULE A broadband VHF amplifier module primarily designed for mobile communications equipment, operating directly from 12 V electrical systems. The module will produce a minimum output of 13 W

S-AV15

Abstract: SAV15
Contextual Info: i TOSHIBA RF POWER AMPLIFIER M ODULE ^ -S-AV15 VHF POWER AMPLIFIER MODULE HAM 25W Ff1 Unit in mm 220~225MHz BAND . Output Power : Po ^ 32W 2- Rai±a2 . Minimum Gain : Gp=22.0dB

S-AV8

Contextual Info: i TOSHIBA RF POWER AMPLIFIER MODULE_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Unit in mm VHF POWER AMPLIFIER MODULE HAM SSB/FM FEATURES : 2-Rai±a2 . Output Power : Po ^17W . Minimum Gain : Gp=19.2dB . Efficiency : 7x^40% . 50Q Input/Output Impedance

Contextual Info: BGY93A MAINTENANCE TYPE _ VHF POWER AMPLIFIER MODULE VHF broadband am plifier module designed fo r use in mobile communication equipment operating directly from a 9.6 V electrical supply. The module w ill produce a m inim um o f 2 W into a 50 i i load

BL01RN1-A62

Abstract: PF0311 1660t Hitachi DSA0046
Contextual Info: PF0311 MOS FET Power Amplifier Module for VHF Band ADE-208-104B Z 3rd. Edition July 1996 Application VHF Band 150 to 174 MHz Features • Small package: 30 x 10 × 5.9 mm • High efficiency: 50% Typ • Low power control current: 0.5 mA Max Pin Arrangement

PF0310

Abstract: Hitachi DSA0046
Contextual Info: PF0310 MOS FET Power Amplifier Module for VHF Band ADE-208-103B Z 3rd. Edition July 1996 Application VHF Band 136 to 150 MHz Features • Small package: 30 x 10 × 5.9 mm • High efficiency: 50% Typ • Low power control current: 0.5 mA Max Pin Arrangement

Contextual Info: PF0310 MOS FET Power Amplifier Module for VHF Band HITACHI Application VHF Band 136 to 150 MHz Features • Small package: 30 x 10 x 5.9 mm • High efficiency: 55% Typ • Low power control current: 0.5 mA Max Pin Arrangement ADE-208-103B Z 3rd Edition

Contextual Info: TOSHIBA Discrete Semiconductors S-AV15 RF Power Amplifier Module VHF Power Amplifier Module HAM 25W FM 220 - 225MHz Features • Output Power : P0 > 32W • Minimum Gain : G p = 22.0dB • Efficiency : 45% Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC

S-AV37

Abstract: RF power amplifier 10mW
Contextual Info: S-AV37 TOSHIBA RF POWER AMPLIFIER MODULE S-AV37 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AV7

Abstract: toshiba rf semiconductors
Contextual Info: TOSHIBA S-AV7 RF Power Amplifier Module VHF Power Amplifier Module HAM FM Features • • • • • Output Power : P0 > 28W Minimum Gain : Gp = 21.4dB Efficiency : hT> 45% 50Q Input/Output Impedance Guaranteed Stability Absolute Maximum Ratings (Tc = 25 C)

Contextual Info: N AUER PHILIPS/DISCRETE bTE D Philips Components • bbSaiai OQBQEfiD =144 BGY112A/112B/112C Data sheet status Preliminary specification date of issue May 1991 VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier modules designed for use in

VS1M

Contextual Info: b b 53T Philips Semiconductors 31 0 0 3 D 300 Sb2 1 APX VHF amplifier module N AMER PHILIPS/DISCRETE DESCRIPTION PINNING - SOT183A An RF amplifier module designed for use in transmitters of mobile communications equipment powered by a 12.5 V battery supply.

s-av6

Abstract: Po-30W SAV-6
Contextual Info: S−AV6 TOSHIBA RF POWER AMPLIFIER MODULE S−AV6 VHF MARINE FM RF POWER AMPLIFIER MODULE Unit: mm High Gain : Po ≥ 28W, GP ≥ 21.4dB, ηT ≥ 45% MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VCC 16 V DC Supply Voltage

S-AV34

Contextual Info: S-AV34 TOSHIBA RF POWER AMPLIFIER MODULE S-AV34 ○RF POWER AMPLIFIER MODULE for VHF BAND •for digital use MAXIMUM RATINGS Tc = 25℃, ZG = ZL = 50Ω CHARACTERISTIC SYMBOL TEST CONDITION RATING UNIT DC Supply Voltage VDD VGG =0V, Pi =0mW 20 V DC Supply Voltage

Contextual Info: S−AV17 TOSHIBA RF POWER AMPLIFIER MODULE S−AV17 VHF 50W FM RF POWER AMPLIFIER MODULE HAM Application Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VCC 16 V DC Supply Voltage VCON 16 V Total Current IT 14 A

S-AV38

Contextual Info: S−AV38 TOSHIBA RF POWER AMPLIFIER MODULE S−AV38 ○RF POWER AMPLIFIER MODULE for VHF BAND •for digital use MAXIMUM RATINGS Tc = 25℃ CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 7 V Pi 17 dBmW Tc (opr) −30~100

Contextual Info: bb53T3:ii 003250b b27 « A P X OM2070 N AflER PHILIPS/DISCRETE bTE D _ / V _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate,

SAV5

Abstract: S-Av5
Contextual Info: RF POWER AMPLIFIER MODULE S-AV5 Unit VHF POWER AMPLIFIER MODULE HAM FM in m m FEATURES: . Output Power P0 S 1 5 W . Minimum Gain Gp2ïl8.7dB . Efficiency Ï X â ‘48% 50Q Input/Output Impedance Guaranteed Stability MAXIMUM RATINGS ( T c = 2 5 C) CHARACTERISTIC

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Abstract: PHILIPS VHF AMPLIFIER MODULE LIST vhf amplifier NPN RF Amplifier vHF amplifier module BGY145C philips 5b capacitor 47 nf MLA362
Contextual Info: PHILIPS INTERNATIONAL 41E D Bi ?llDaSb QOSflMT? 7 • P H I N P hilips S em iconductors P roduct specification VHF amplifier module BGY145C T-7V-<ff-Ol PINNING - SOT183A DESCRIPTION The module is a two stage transistor amplifier and consists of two RF npn

Contextual Info: N AMER PH IL IPS /DI SCRE TE b^E ]> bbS3T31 0033444 SST OM361 APX _ / V _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide band amplifier in hybrid integrated circuit technique on a thin-film substrate,

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Abstract: vhf amplifier OM2046 UM204 MLA422 philips if catv amplifier UM2046
Contextual Info: Product specification Philips Semiconductors Hybrid integrated circuit VHF/UHF wideband amplifier OM2046 PIN CONFIGURATION PINNING DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for use in mast-head booster-amplifiers,

Contextual Info: N AUER PHILIPS/DISCRETE h^E D m bbSB'lBl QD32i47i4 2^7 APX OM2050 _ / v _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended

philips ph 116 capacitor

Contextual Info: bbS3T31 0 0 3 2 4 ^ 12T « A P X Philips Semiconductors Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2046 N AUER PHILIPS/DISCRETE DESCRIPTION PIN CONFIGURATION PINNING A one-stage wideband amplifier in hybrid integrated circuit technology