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Murata Manufacturing Co Ltd LBUA0VG2BP-741 RF TXRX MODULE 802.15.4 SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LBUA0VG2BP-741	Cut Tape	895		1	1 $24.31 10 $19.147 100 $15.7236 1000 $14.0834 10000 $14.0834	Buy Now
	LBUA0VG2BP-741	Reel			1,000	1 - 10 - 100 - 1000 $13.52256 10000 $13.52256	Buy Now
Mouser Electronics	LBUA0VG2BP-741		1,699			1 $24.31 10 $19.14 100 $15.73 1000 $13.53 10000 $13.53	Buy Now
Newark	LBUA0VG2BP-741	Cut Tape	300		1	1 $21.98 10 $19.96 100 $16.92 1000 $15.91 10000 $15.91	Buy Now
TTI	LBUA0VG2BP-741	Reel			1,000	1 - 10 - 100 - 1000 $13.52 10000 $13.52	Buy Now
Richardson RFPD	LBUA0VG2BP-741				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Abacus	LBUA0VG2BP-741		2,000	19 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	LBUA0VG2BP-741		1,000		1	1 - 10 $15.51 100 $15.51 1000 $15.51 10000 $15.51	Buy Now
Symmetry Electronics	LBUA0VG2BP-741				1	1 $17.95 10 $17.95 100 $17.95 1000 $17.95 10000 $17.95	Buy Now
KYOCERA Corporation KCG075VG2BE-G000 GRAPHIC DISPLAY STN - 7.5"
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	KCG075VG2BE-G000	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Murata Manufacturing Co Ltd LBUA0VG2BP-EVK-P Evaluation Board, SR150, Ultra-Wideband Transceiver, Wireless Connectivity - Boxed Product (Development Kits) (Alt: LBUA0VG2BP-EVK-P)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	LBUA0VG2BP-EVK-P	Box		20 Weeks	10	1 - 10 $127.07 100 $127.07 1000 $127.07 10000 $127.07	Buy Now
Mouser Electronics	LBUA0VG2BP-EVK-P		93			1 $178.84 10 $178.84 100 $178.84 1000 $178.84 10000 $178.84	Buy Now
Newark	LBUA0VG2BP-EVK-P	Bulk			1	1 $185.99 10 $185.99 100 $185.99 1000 $185.99 10000 $185.99	Buy Now
Avnet Asia	LBUA0VG2BP-EVK-P			40 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	LBUA0VG2BP-EVK-P		20		1	1 $176.47 10 $176.47 100 $164.71 1000 $164.71 10000 $164.71	Buy Now

Symmetry Electronics	LBUA0VG2BP-EVK-P				1	1 $131 10 $131 100 $131 1000 $131 10000 $131	Buy Now
Amphenol Corporation VG96912B12-98SNNSA15 Circular MIL Spec Connector Receptacle Crimp 10 contacts
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	VG96912B12-98SNNSA15					1 - 10 $87.3 100 $76.68 1000 $76.68 10000 $76.68	Get Quote
Dwyer Instruments Inc AVG-2B121 AVG-2B121 AVG TEMP SENSOR \| Dwyer Instruments AVG-2B121
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	AVG-2B121	Bulk			1	1 $60.3 10 $58.58 100 $58.58 1000 $58.58 10000 $58.58	Get Quote

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VG2B Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VG2B-7000		LuxNet	Low Threshold 2.5 Gbps 850 nm VCSEL		Original	PDF
VG2B-7010		LuxNet	Low Threshold 2.5 Gbps 850 nm VCSEL		Original	PDF

VG2B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
rs 7410 Abstract: vcsel array Text: 48400 Fremont Blvd. Fremont, CA 94538 Tel: 510 445-3068 x244 Fax: (510) 445-3060 Low Threshold 10 Gbps 1x4 Array 850 nm VCSEL Part Number: VG2B-7410 Applications: 10 Gbps aggregate speed Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Min. Max.	Original	PDF	VG2B-7410 rs 7410 vcsel array
3068 Abstract: VG2B-7810 ARRAY VCSEL Text: 48400 Fremont Blvd. Fremont, CA 94538 Tel: 510 445-3068 x244 Fax: (510) 445-3060 Low Threshold 30 Gbps 850 nm 1x12 Array VCSEL Part Number: VG2B-7810 Applications: 30 Gbps aggregate speed Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Min. Max.	Original	PDF	VG2B-7810 3068 VG2B-7810 ARRAY VCSEL
VCSEL die bonding Abstract: VG2B-7010 Text: 48400 Fremont Blvd. Fremont, CA 94538 Tel: 510 445-3068 x244 Fax: (510) 445-3060 Low Threshold 2.5 Gbps 850 nm VCSEL Part Number: VG2B-7010 Applications: 2.125 / 2.5 Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Forward Imax mA Current Reverse Voltage	Original	PDF	VG2B-7010 VCSEL die bonding VG2B-7010
VG2B-7000 Abstract: No abstract text available Text: th 50, Lung-Yuan 7 Road, Lung-Tan Tao-Yuan Hsien, TAIWAN Tel: 03 409-1335 x230/235 Fax: (03) 409-1339 48400 Fremont Blvd. Fremont, CA 94538 USA Tel: (510) 445-3068 x244 Fax: (510) 445-3060 Low Threshold 2.5 Gbps 850 nm VCSEL Data Sheet Part Number: VG2B-7000	Original	PDF	x230/235 VG2B-7000 VG2B-7000
XP1073-BD Abstract: xp1073 DM6030HK XP107 Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	P1073-BD 16-Feb-10 MIL-STD-883 XP1073-BD XP1073-BD xp1073 DM6030HK XP107
30SPA0553 Abstract: 30SPA0557 84-1LMI Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	30SPA0553 01-Sep-05 MIL-STD-883 30SPA0553 30SPA0557 84-1LMI
discon Abstract: No abstract text available Text: Designated client product This product will be discontinued its production in the near term. And it is provided for customers currently in use only, with a time limit. It can not be available for your new project. Please select other new or existing products.	Original	PDF	NJW1301 NJW1301 in-60 in-58 discon
P1015-BD Abstract: No abstract text available Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	10-Aug-07 P1015-BD MIL-STD-883 XP1015-BD-000V XP1015-BD-EV1 XP1015
XP1006-BD Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	XP1006-BD MIL-STD-883 01-Sep-10 XP1006 XP1006-BD X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
P1006BD Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	11-Nov-08 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 P1006BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
44MPA0478 Abstract: DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	P1028-BD 17-Apr-07 MIL-STD-883 XP1028-BD-000V XP1028-BD-EV1 XP1028 44MPA0478 DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD
inductance R600 Abstract: No abstract text available Text: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection	Original	PDF	01-Mar-05 MIL-STD-883 inductance R600
Untitled Abstract: No abstract text available Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2009 - Rev 29-Jan-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept	Original	PDF	29-Jan-09 P1057-BD MIL-STD-883 anD-000V XP1057-BD-EV1 XP1057-BD
tanaka gold wire Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	13-Mar-06 P1006 MIL-STD-883 XP1006 tanaka gold wire MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip

P1016 Abstract: DM6030HK XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD February 2010 - Rev 15-Feb-10 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010	Original	PDF	P1016-BD 15-Feb-10 MIL-STD-883 XP1016-BD XP1016-BD-EV1 XP1016 P1016 DM6030HK XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic
Untitled Abstract: No abstract text available Text: Agilent 1GG6-4080 0.155 – 43 Gb/s Differential I/O, High Power, Output Amplifier Data Sheet Features • Frequency range: 50 GHz single–ended , 30 GHz (diff.) • Single–ended or fully differential I/O operation • Low additive jitter: 600 fs, (43 Gb/s 231 – 1 PRBS, RMS typ.)	Original	PDF	1GG6-4080 5991-1251EN
SA051 Abstract: HEMT Amplifier Text: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA	OCR Scan	PDF	APH212C APH212C SA051 006/J-2 SA051 HEMT Amplifier
2n2646 2n2647 Abstract: 2N2646 n2646 Text: TYPES 2N2646, 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS • Planar Process Ensures Low Leakage, Low Drive-Current	OCR Scan	PDF	2N2646, 2N2647 2n2646 2n2647 2N2646 n2646
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
ecl82 Abstract: ecl 82 2X42 triode push-pull circuit Mazda Text: M AZDA BELVU TRIODE PENTODE C £ l OO O scillateur et amplificateur de balayage im ages vAmplificateur A .F . C A R A C T ER IST IQ U ES G E N E R A L E S Cathode à chauffage indirect Alim entation du filament en parallèle T ension filament . Vf	OCR Scan	PDF	A22-4 ecl82 ecl 82 2X42 triode push-pull circuit Mazda
Untitled Abstract: No abstract text available Text: AWT919D TX POWER MMIC E W iDIGIG* Advanced Product Information Your GaAs IC Source REV: 1 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both 824 - 849 MHz AMPS/DAMPS and	OCR Scan	PDF	AWT919D T919D kZ25H3 06/07/98-AWT919d
Untitled Abstract: No abstract text available Text: E m m AWT919D TX POWER MMIC a c s ' Your GaAs IC Source A d va n ce d P ro d u ct ln fo r 1™ 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: V D IJ k YD2JL The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both	OCR Scan	PDF	AWT919D T919D Q0000409CW4H40000MQ 04CHKCW 06/07/98-AWT919d
UJT-2N2646 PIN DIAGRAM DETAILS Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402 Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect	OCR Scan	PDF	Semi260 TY510 TY6004 TY6008 TY6010 TY8008 TY8010 2N6394 MCR218-8 UJT-2N2646 PIN DIAGRAM DETAILS speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
UJT 2N4871 Abstract: transistor 2n4871 UJT 2N4870 2N4870 2N4871 ZN4871 2N4810 100S 2N487 ABB thyristor 5 Text: 2IM4870 2N4871 PIM U n iju n ctio n T ra n s is to rs S ilico n U n iju n ctio n T ra n sis to rs . . . . designed for pulse and timing circuits, sensing circuits, and thyristor trigger circuits. These devices feature: . • • • • • Low Peak Point Current — 1 nA Typical	OCR Scan	PDF	2IM4870 2N4871 O-226AAÃ b3b7255 2IM4870 V82B1. UJT 2N4871 transistor 2n4871 UJT 2N4870 2N4870 2N4871 ZN4871 2N4810 100S 2N487 ABB thyristor 5

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VG2B Search Results

VG2B Price and Stock

Murata Manufacturing Co Ltd LBUA0VG2BP-741

KYOCERA Corporation KCG075VG2BE-G000

Murata Manufacturing Co Ltd LBUA0VG2BP-EVK-P

Amphenol Corporation VG96912B12-98SNNSA15

Dwyer Instruments Inc AVG-2B121

VG2B Datasheets (2)

VG2B Datasheets Context Search

rs 7410

3068

VCSEL die bonding

VG2B-7000

XP1073-BD

30SPA0553

discon

P1015-BD

XP1006-BD

P1006BD

44MPA0478

inductance R600

Untitled

tanaka gold wire

P1016

Untitled

SA051

2n2646 2n2647

IC HXJ 2038

ecl82

Untitled

Untitled

UJT-2N2646 PIN DIAGRAM DETAILS

UJT 2N4871