VE2B Search Results

2N998

Abstract: 2N2723 CB10
Contextual Info: MGTORCLA SC XSTRS/R F 12E Sym bol Value Unit VCE20 60 Vde Collector-Base Voltage VcB1 80 Vdc Emitter-Base Voltage VE2B1 12 Vdc Collector Current — Continuous ic 40 Adc Total Device Dissipation @ Ta =- 25°C Derate above 25°C PO 0.5 2.9 Watt mW/°C Total Device Dissipation @ T c = 25°C

CE020

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | Sym bol Value Unit VCE20 40 Vdc Collector-Base Voltage VC B 1 0 60 Vdc Emitter-Base Voltage Pin 4 to Pin 2 VE2B10 15 7.5 Vdc Collector Current — Continuous ic 200 mAdc Total Device Dissipation @ Ta = 26°C Derate above 25°C

Contextual Info: Advanced I / I 1 I ^ ^¡ZS/ L in e a r ALD2722E/ALD2722 D e v ic e s , Inc. DUAL EPAD OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • 5V single supply operation • EPAD Electrically Programmable Analog Device • User programmable Vos trimmer • Computer-assisted trimming

ALD2721E

Abstract: ALD2726 ALD2726E ALD2721
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD2726E/ALD2726 DUAL EPAD ULTRA MICROPOWER OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • EPAD Electrically Programmable Analog Device • User programmable VOS trimmer • Computer-assisted trimming • Rail-to-rail input/output

Contextual Info: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD2726E/ALD2726 DUAL EPAD® ULTRA MICROPOWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • • • • • • • Eliminates manual and elaborate system trimming procedures

ALD2726E

Abstract: ALD2726EPB ALD2726PB ALD2726 Advanced Linear Devices ALD2726DB ALD2726EDB ALD2726ESB ALD2726SB
Contextual Info: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD2726E/ALD2726 DUAL EPAD® ULTRA MICROPOWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • • • • • • • Eliminates manual and elaborate system trimming procedures

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

SMA5101

Abstract: RF Double Balanced Mixer
Contextual Info: SMA5101 Ordering number : ENA1839 SANYO Semiconductors DATA SHEET SMA5101 Silicon Monolithic Linear IC RF Double Balanced Mixer IC Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm

Contextual Info: SMA5101 Ordering number : ENA1839A SANYO Semiconductors DATA SHEET SMA5101 Silicon Monolithic Linear IC RF Double Balanced Mixer IC Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm

Contextual Info: Ordering number : ENA1839A SMA5101 MMIC http://onsemi.com Mixer, IIP3=15dBm, Gc=-0.5dB@450MHz, MCPH6 Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm • • • High conversion gain : -0.5dB (@450MHz)

3N74

Abstract: TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N127 3N76 3N75 JAN 3K76
Contextual Info: MIL-S-19500/390 USAF 22 January 1968 WTT TTA D V CDIfrTt'Tf'iTTnW SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N7A, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127 1. SCOPE •*-•1 Scope. This specification covers the detail requirements for a doubleemitter, NPNj silicon tetrode transistor designed primarily for low-power chopper

ALD2724

Abstract: ALD2724E ALD2724EPB ALD2724PB ALD2724DB ALD2724EDB ALD2724ESB ALD2724SB 2724e VE2b
Contextual Info: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD2724E/ALD2724 DUAL EPAD® PRECISION HIGH SLEW RATE CMOS OPERATIONAL AMPLIFIER BENEFITS KEY FEATURES • • • • • • • • • • • • Factory pre-trimmed VOS VOS=25µV @ IOS=0.01pA 5V/µs slew rate

cl4001

Contextual Info: r r r ^ | / | advanced 1 L in e a r ALD2726E/ALD2726 D e v ic e s , I n c . DUAL EPA D ULTRA MICROPOWER OPERATIONAL AMPLIFIER K EY F E A T U R E S B E N E F IT S • • • • • • • • • • • • • E P A D Electrically Programmable Analog Device

bm10

Abstract: A1839
Contextual Info: SMA5101 Ordering number : ENA1839A SANYO Semiconductors DATA SHEET SMA5101 Silicon Monolithic Linear IC RF Double Balanced Mixer IC Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm

Contextual Info: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD2721E/ALD2721 DUAL EPAD® MICROPOWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • • • • • • • Eliminates manual and elaborate system trimming procedures • Remote controlled automated trimming

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

ALD2722E

Abstract: ALD2724 ALD2724E 2724e jfet common drain buffer amplifier
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD2724E/ALD2724 DUAL EPAD PRECISION HIGH SLEW RATE CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • Ready to use off the shelf standard part • Custom automated trimming optional • Remote controlled automated trimming

ALD2721

Abstract: ALD2721E ALD2721EPB ALD2721PB Advanced Linear Devices ALD2721DB ALD2721EDB ALD2721ESB ALD2721SB
Contextual Info: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD2721E/ALD2721 DUAL EPAD® MICROPOWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • • • • • • • Eliminates manual and elaborate system trimming procedures • Remote controlled automated trimming

AN-1153

Contextual Info: National Semiconductor Application Note 1153 Thinh Ha February 2002 ABSTRACT This application note describes the COP8 Virtual E2 Methodology. Emulated E2 allows the programmer to treat flash memory as if it were E2. validity of the ISP Address and the BYTECOUNTHI register.

Contextual Info: SMA5101 Ordering number : ENA1839 SANYO Semiconductors DATA SHEET SMA5101 Silicon Monolithic Linear IC RF Double Balanced Mixer IC Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm

Contextual Info: P T T N I / I | L ± S A dvanced 1 L in e a r / D e v ic e s , I n c . ALD2721E/ALD2721 DUAL EPAD MICROFOWER OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • EPAD Electrically Programmable Analog Device • User programmable V os trimmer • Computer-assisted trimming

ALD2722

Abstract: ALD2722E ALD2722EPB ALD2722PB Advanced Linear Devices ALD2722DB ALD2722EDB ALD2722ESB ALD2722SB AN1700
Contextual Info: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD2722E/ALD2722 DUAL EPAD® LOW POWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • • • • • • • • Eliminates manual and elaborate system trimming procedures

Contextual Info: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD2724E/ALD2724 DUAL EPAD® PRECISION HIGH SLEW RATE CMOS OPERATIONAL AMPLIFIER BENEFITS KEY FEATURES • • • • • • • • • • • • Factory pre-trimmed VOS VOS=25µV @ IOS=0.01pA 5V/µs slew rate

db opera 415

Abstract: ALD2721 ALD2721E
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD2721E/ALD2721 DUAL EPAD MICROPOWER OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • EPAD Electrically Programmable Analog Device • User programmable VOS trimmer • Computer-assisted trimming • Rail-to-rail input/output