Untitled
Abstract: No abstract text available
Text: 1 of 4 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers
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VDE0883/6
8101/2/3/4/G
100ohm
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c3212
Abstract: AD261 AD261AND-0 AD261AND-1 AD261-5 F12S1
Text: a FEATURES Isolation Test Voltage: To 3.5 kV rms Five Isolated Logic Lines: Available in Six I/O Configurations Logic Signal Bandwidth: 20 MHz min CMV Transient Immunity: 10 kV/s min Waveform Edge Transmission Symmetry: ؎1 ns Field and System Output Enable/Three-State Functions
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UL1950,
IEC950,
EN60950
AD261
22-Pin
ND-22A)
c3212
AD261
AD261AND-0
AD261AND-1
AD261-5
F12S1
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ad261
Abstract: AD2611 AD2610 ND-22A
Text: BACK a FEATURES Isolation Test Voltage: To 3.5 kV rms Five Isolated Logic Lines: Available in Six I/O Configurations Logic Signal Bandwidth: 20 MHz min CMV Transient Immunity: 10 kV/s min Waveform Edge Transmission Symmetry: ؎1 ns Field and System Output Enable/Three-State Functions
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UL1950,
IEC950,
EN60950
AD261
22-Pin
ND-22A)
C3212
ad261
AD2611
AD2610
ND-22A
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Untitled
Abstract: No abstract text available
Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page
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VDE0883/6
8101/2/3/4/G
coup104
100ohm
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MOTOROLA OPTOELECTRONIC ic pin diagram
Abstract: triac driver opto moc3021 opto d207 MCT2E soic D217 OPTO IC 4N25 triac 730A-04 a4n33 opto triac moc3010 MOC3041 opto isolator
Text: Optoelectronic Devices In Brief . . . Motorola’s families of optoelectronic components encompass red and infrared GaAs emitters and silicon detectors that are well matched for a variety of applications. Optoisolators Motorola’s “Global” 6–Pin Dual In–line Package DIP
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MOC2A60-5
MOC2A60-10
02/Style
01/Style
MOTOROLA OPTOELECTRONIC ic pin diagram
triac driver opto moc3021
opto d207
MCT2E soic
D217 OPTO
IC 4N25 triac
730A-04
a4n33
opto triac moc3010
MOC3041 opto isolator
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LM2524
Abstract: C3031 AD2603 AD2604 6f321 f422 Diode in5819 AD260 AD260AND-0 AD260AND-1
Text: a FEATURES IsoLogic Circuit Architecture Isolation Test Voltage: To 3.5 kV rms Five Isolated Logic Lines: Available in Six I/O Configurations Logic Signal Bandwidth: 20 MHz Min , 40 mbps (NRZ) Isolated Power Transformer: 37 V p-p, 1.5 W Max CMV Transient Immunity: 10 kV/s Min
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UL1950,
IEC950,
EN60950
AD260
AD260
C3031
22-Lead
ND-22)
LM2524
AD2603
AD2604
6f321
f422
Diode in5819
AD260AND-0
AD260AND-1
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TLP639
Abstract: TLP639-F TLP639F VDE-0110
Text: TLP639F GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA Unit in mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT 6 5 4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP639F consists of two gallium arsenide infrared emitting diode connected inverse parallel,
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TLP639F
TLP639F
TLP639.
5000Vrms
500Vac
883/VDE0883/6
804/VDE0804/1
IEC65/VDE0860/8
IEC380/VDE0806/8
IEC435/VDE0805/Draft
TLP639
TLP639-F
VDE-0110
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MOC3001
Abstract: MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833
Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M OC3000 MOC3001 6-P in D IP O p to is o la to rs S C R Output These devices consist of gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
30A-02
MOC3001
MOC3000
scr optoisolator
mr5060
SCR GATE DRIVER
IEC204AXK
VDE0113
VDE0160
VDE0832
VDE0833
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k 6115
Abstract: dc to dc Optoisolator Optoisolator MOC8080 VDE0160 VDE0832 VDE0833 IEC-204
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC8080 6-Pin D IP O p to iso lato r High Tem perature D arlington O utput • • • • • • Convenient Plastic Dual-ln-Line Package High Sensitivity to Low Input Drive Current Low, Stable Leakage Current at Elevated Temperature
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
IEC204/VDE0113,
VDE0160,
VDE0832,
VDE0833,
VDE0883/
30A-02
k 6115
dc to dc Optoisolator
Optoisolator
MOC8080
VDE0160
VDE0832
VDE0833
IEC-204
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MOC8020
Abstract: MOC8021 VDE0160 VDE0832 VDE0833
Text: MOTOROLA • I S E M IC O N D U C T O R TECHNICAL DATA M O C8020 MOC8021 6-Pin DIP Optoisolators Darlington Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high sensitivity at low input
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E54915^
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE086Q,
VDE0110b,
30A-02
MOC8020
MOC8021
VDE0160
VDE0832
VDE0833
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Y14SM
Abstract: VDE0883 MOC8030 MOC8050 VDE0160 VDE0832 VDE0833 IEC204 IEC-204
Text: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA M O C 8030 M O C 8050 6 -P in D IP O p t o is o la t o r s Darlington Output These devices consist of gallium arsenide infrared em itting diodes optically coupled to m onolithic silicon photodarlington detectors.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
30A-02
Y14SM
VDE0883
MOC8030
MOC8050
VDE0160
VDE0832
VDE0833
IEC204
IEC-204
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect
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Semi260
TY510
TY6004
TY6008
TY6010
TY8008
TY8010
2N6394
MCR218-8
UJT-2N2646 PIN DIAGRAM DETAILS
speed control of dc motor using ujt scr
c107m TRANSISTOR equivalent
UJT pin diagram 2N2646
1000w inverter PURE SINE WAVE schematic diagram
TY6008
triac ot 239
class d 1000w amplifier
inverter welder 4 schematic
thyristor zo 402
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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C8050
Abstract: C3050
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 80 30 M O C 80 50 6-P in D IP O p to is o la to rs Darlington Output These devices co n s is t o f g a lliu m arsenide in fra re d e m ittin g d io d e s o p tic a lly c o up le d to m o n o lith ic silico n p h o to d a rlin g to n d etectors.
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E54915
30A-02
C8050
C3050
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MOC8060
Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
Text: MO TO R O L A SC D I O D E S / O P T O b3b7255 0GÔ312Ô G K3MOT? 3^E » Order this data sheet by MQC8060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MOC8O6O 6-Pin DIP Optoisolator AC Input/Darlington Output This device consists of two gallium arsenide infrared emitting diodes connected in inverseparallel, optically coupled to a silicon photodarlington detector which has integral base-emitter
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b3b7255
MQC8060/D
E54915^
C13S0
OJJ20
730B-02
730C-02
730D-Q2
MOC8060
ANSI 60
CE01
Motorola optoisolator lead form options
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 4N 35 4N 36 4N37 6-Pin DIP Optoisolators Transistor Output T he se d evices co n sist of a gallium arsenide infrared em itting d iod e optically coup led to a m onolithic silicon pho to tran sistor detector. 6-PIN DIP
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
E0110b
30A-02
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VDE-0883
Abstract: No abstract text available
Text: MOTOROLA h S E M IC O N D U C T O R TECHNICAL DATA C N Y 1 7 -1 C N Y 1 7 -2 C N Y 1 7 -3 6-P in D IP O p to is o la to rs T ra n sisto r O u tp u t These devices co nsist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silic o n p h o to tra n s is to r detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
VDE-0883
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Untitled
Abstract: No abstract text available
Text: MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA M O C 8 1 11 M O C 8112 M O C 81 13 6-P in D IP O p to iso lato rs Transistor Output These d evices co n sist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r d etector. The in te rn a l base-to-Pin 6 co nn e ctio n
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica
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H11B1
H11B2
H11B3
E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
30A-02
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HCPL 601
Abstract: optocoupler ic 6N136 OPTOCOUPLER 687 Optocoupler 601
Text: High-Speed Logic Gate Optocouplers Withstand Test Typical Device 3 Vcc TjVour 6] Vf H gnd Œ »N O D E [2 C A THO DE [3 a Description HCPL-2200 HCPL-2219 Application 3 Slate Output Low High Speed Logic Input Current Ground Isolation, Optically Coupled LSTTL, TTL, CMOS
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HCPL-2200
HCPL-2219
VDE0883
HCPL-2201
HCPL-2211
HSSR-8200
HCPL 601
optocoupler ic 6N136
OPTOCOUPLER 687
Optocoupler 601
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C3883
Abstract: GE H11D2 verin VDE0833 H11D1 GE
Text: MOTOROLA B SEMICONDUCTOR TECHNICAL DATA H11D1 H11D2 H11D3 H11D4 6-Pin DIP Optoisolators Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e , s ilico n , p h o to tra n s is to r d e te cto rs in a sta n d a rd 6-pin DIP package. T hey are d esig n ed fo r
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H11D1
H11D3
E54915
C3883
GE H11D2
verin
VDE0833
H11D1 GE
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TLP635F
Abstract: TLP635 TLP636 TLP636F TLP635-F VDE0110 VDE-0110 VDE0804 VDE-0883 VDE0750T1
Text: GaAs IRED a PHOTO-TRANSISTOR TLP635F, 636F TENTATIVE DATA Unit in mm OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP635F and TLP636F consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead
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TLP635F,
TLP635F
TLP636F
TLP635
TLP636.
5000Vrms
TLP636F
500Vac
TLP636
TLP635-F
VDE0110
VDE-0110
VDE0804
VDE-0883
VDE0750T1
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TLP741G
Abstract: No abstract text available
Text: TOSHIBA GaAs IRED & PHOTO-THYRISTOR TLP741G Unit in mm Office Machine Household Use Equipment Solid State Relay Switching Power Supply The Toshiba TLP741G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
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TLP741G
150mA
4000Vrms
500Vac
600Vdc
TLP741G
IEC380/VDE0806
DIN57883/VDE0883/6
VDE0110,
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TLP735
Abstract: TLP735F tlp736f TLP736 TLP 736F VDE0860 tlp 357 HJ 358 TLP73 p736
Text: TO SHIBA SEMICONDUCTOR TO SIIiBA PHOTO C UP LE R TLP735F, TECHNICAL DATA TENTATIVE TLP736F (inAs IRED & PHOÏO-TRANSISTOR DATA Un i t in mm OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP735F and TI.P7 >0P consist of a
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TLP735F,
TLP736F
TLP736E
TLP736.
TLP735
TLP736
TLP735F
tlp736f
TLP736
TLP 736F
VDE0860
tlp 357
HJ 358
TLP73
p736
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