VCES 4500V Search Results

Contextual Info: Advance Technical Information High Voltage XPTTM IGBT IXYF40N450 VCES = 4500V IC110 = 32A VCE sat  3.9V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M

Contextual Info: S Advance Technical Information IXYL60N450 High Voltage XPTTM IGBT VCES = 4500V IC110 = 38A VCE sat  3.30V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M

Contextual Info: Advance Technical Information High Voltage XPTTM IGBT IXYX40N450HV VCES = 4500V IC110 = 40A VCE sat  3.9V TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M 4500 V VGES Continuous

Contextual Info: Advance Technical Information High Voltage XPTTM IGBT IXYF30N450 VCES = 4500V IC110 = 17A VCE sat  3.9V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M

Contextual Info: Advance Technical Information High Voltage XPTTM IGBT IXYT30N450HV IXYH30N450HV VCES = 4500V IC110 = 30A VCE sat  3.9V TO-268HV (IXYT) G E Symbol Test Conditions C (Tab) Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M

CM900HB-90H

Contextual Info: MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HB-90H ● IC . 900A ● VCES . 4500V

CM600HB-90H

Abstract: 7400 ic diagram
Contextual Info: MITSUBISHI HVIGBT MODULES CM600HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HB-90H ● IC . 600A ● VCES . 4500V

CM400HB-90H

Abstract: 5725C
Contextual Info: MITSUBISHI HVIGBT MODULES CM400HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HB-90H ● IC . 400A ● VCES . 4500V

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD400S45KL3_B5 hochisolierendesModul highinsulatedmodule VCES = 4500V IC nom = 400A / ICRM = 800A TypischeAnwendungen • Hochleistungsumrichter • Mittelspannungsantriebe • Motorantriebe

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD1200S45KL3_B5 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 4500V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen • Hochleistungsumrichter

DTS 423

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R45KL3_B5 VCES = 4500V

FZ1200R45KL3

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1200R45KL3_B5 VCES = 4500V

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FZ1200R45HL3 VCES = 4500V IC nom = 1200A / ICRM = 2400A

Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-130H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600HG-130H ● IC . 600A ● VCES . 6500V

CM200HG-130H

Abstract: hvigbt diode HVIGBT from Mitsubishi electric
Contextual Info: MITSUBISHI HVIGBT MODULES CM200HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM200HG-130H ● IC . 200 A ● VCES . 6500 V

Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-130H ● IC . 600 A ● VCES . 6500 V

Contextual Info: MITSUBISHI HVIGBT MODULES CM200HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM200HG-130H ● IC . 200 A ● VCES . 6500 V

CM600HG-130H

Abstract: HVIGBT from Mitsubishi electric
Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-130H ● IC . 600 A ● VCES . 6500 V

DIM150PSM45-F000

Contextual Info: Preliminary Information DIM150PSM45-F000 Single Switch IGBT Module DS5956.1 January 2010 LN26978 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated AlSiC Base with AlN Substrates KEY PARAMETERS VCES

50b60pd

Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
Contextual Info: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET

Contextual Info: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC

Contextual Info: Preliminary Information Data DIM1200ASM45-TS000 Single Switch IGBT Module DS6102-1 May 2013 LN30516 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)

Contextual Info: Preliminary Information Data DIM1200ASM45-TS001 Single Switch IGBT Module DS6107-1 June 2013 LN30635 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK)

Contextual Info: Preliminary Information Data DIM1200ASM45-TS000 Single Switch IGBT Module DS6102-1 May 2013 LN30516 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)