DD1200S45KL3 Search Results
DD1200S45KL3 Price and Stock
Infineon Technologies AG DD1200S45KL3B5NOSA1DIODE MODULE GP 4500V AIHV130-4 |
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DD1200S45KL3B5NOSA1 | Tray | 2 | 1 |
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DD1200S45KL3B5NOSA1 | Tray | 52 Weeks | 2 |
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DD1200S45KL3B5NOSA1 | 53 Weeks | 2 |
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Infineon Technologies AG DD1200S45KL3_B5IGBT Modules IHV IHM T |
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DD1200S45KL3_B5 | 2 |
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DD1200S45KL3 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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| DD1200S45KL3B5NOSA1 |
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Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE MODULE 1200V 1200A | Original |
DD1200S45KL3 Datasheets Context Search
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Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DD1200S45KL3_B5 高绝缘等级模块 highinsulatedmodule 初步数据/PreliminaryData VCES = 4500V IC nom = 1200A / ICRM = 2400A 典型应用 • 大功率变流器 • 中压变流器 • 电机传动 |
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DD1200S45KL3 | |
FZ1200R45KL3Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-Module DD1200S45KL3_B5 高絶縁型モジュール highinsulatedmodule 暫定データ/PreliminaryData VCES = 4500V IC nom = 1200A / ICRM = 2400A 一般応用 |
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DD1200S45KL3 FZ1200R45KL3 | |
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Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD1200S45KL3_B5 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 4500V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen • Hochleistungsumrichter |
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DD1200S45KL3 | |
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