VCEO 100V TRANSISTOR Search Results

VCEO 100V TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

VCEO 100V TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NPN transistor collector base and emitter Abstract: NTE96 10-32 UNF 2A Contextual Info: NTE96 Silicon NPN Transistor Power Switching Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE96 10-32-UNF-2A NPN transistor collector base and emitter NTE96 10-32 UNF 2A	PDF
NTE74 Abstract: 10-32 UNF NPN transistor collector base and emitter Contextual Info: NTE74 Silicon NPN Transistor General Purpose Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE74 10-32-UNF-2A NTE74 10-32 UNF NPN transistor collector base and emitter	PDF
Contextual Info: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.	Original	FCX493 FCX593 FCX493TA FCX493TC	PDF
MARKING N93 Abstract: 4446 FCX493 FCX593 fcx493ta Contextual Info: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.	Original	FCX493 FCX593 FCX493TA FCX493TC MAX00 MARKING N93 4446 FCX493 FCX593 fcx493ta	PDF
Contextual Info: Transistors IC SMD Type Product specification 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage	Original	2SD1006 100mA 500mA -10mA	PDF
NTE56 Contextual Info: NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE56 NTE56	PDF
SMD TRANSISTOR MARKING km Abstract: transistor smd marking KL smd marking Kk transistor smd KL transistor smd marking KK smd marking KM KM MARKING MARKING KL 2SB805 hFE CLASSIFICATION Marking Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB805 Features High collector to emitter voltage: VCEO -100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage	Original	2SB805 -100V. -100V, -100mA -500mA -50mA -10mA SMD TRANSISTOR MARKING km transistor smd marking KL smd marking Kk transistor smd KL transistor smd marking KK smd marking KM KM MARKING MARKING KL 2SB805 hFE CLASSIFICATION Marking	PDF
TRANSISTOR HK SMD Abstract: smd ic marking HL smd marking HK transistors marking HK HL 100 Transistor HL 06 ic 2SD1006 Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage	Original	2SD1006 100mA 500mA -10mA TRANSISTOR HK SMD smd ic marking HL smd marking HK transistors marking HK HL 100 Transistor HL 06 ic 2SD1006	PDF
germanium transistors NPN Abstract: CASE TYPE TO13 2N1326 npn germanium 2n539 2N1329 2N539A 2N538A 2N538 Germanium power Contextual Info: germanium power transistors /*Sl » PNP TO-13 lc M A X = 3A VcEO(SUS) = 30 to 100V Iif e Type# NPN Comple ment VCEO(SUS) (Volts) (Volts) @ Ic/VcE (Min-Max @ A/V) 2N1078 2N1328 2N1331 2N1333 2N1330 2N1329 2N1332 2N1334 60(Vces) 30(Vces) 80(Vces) IOO(Vces)	OCR Scan	2N1078 2N1328 2N1331 2N1333 2N1330 2N1329 2N1332 2N1334 2N1321 germanium transistors NPN CASE TYPE TO13 2N1326 npn germanium 2n539 2N539A 2N538A 2N538 Germanium power	PDF
2SC2499 Abstract: 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor Contextual Info: Video Output Transistors for Video Display Terminal ^ P o j a r # y ' \ ^ ^ Package Description VcEO=10V, IcsO.SA fr=3.5GHz Vceo=18V, lc=0.6A fr=2.5GHz V ceo=100V, lc=0.5A D -P A C K TO-92 MOD '— TO-126 IS (Power-Mold) NPN 2SC3613 NPN 2SC4200 Remarks T0-220(NIS)	OCR Scan	300mA 400MHz 200MHz 2SC2705 2SA1145 2SC4203 O-126 2SC3613 O-220AB T0-220 2SC2499 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor	PDF
2SD525 Abstract: 2SB595 Contextual Info: Inchange Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS	Original	2SD525 O-220C 2SB595 2SD525 2SB595	PDF
MJE4352 Abstract: MJE4353 MJE4350 MJE4351 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors MJE4350/4351/4352/4353 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min)- MJE4350 = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353	Original	MJE4350/4351/4352/4353 -100V MJE4350 -120V MJE4351 -140V MJE4352 -160V MJE4353 MJE4340/4341/4342/4343 MJE4352 MJE4353 MJE4350 MJE4351	PDF
2SB595 Abstract: 2SD525 Contextual Info: Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD525 ・High breakdown voltage :VCEO=-100V ・Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS	Original	2SB595 O-220C 2SD525 -100V 2SB595 2SD525	PDF
417w Abstract: tip30c TIP29C Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP29C DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30C	Original	TIP29C TIP30C 417w tip30c TIP29C	PDF

2SC1108 Abstract: 2SC110 Contextual Info: Inchange Semiconductor Product Specification 2SC1108 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High breakdown voltage :VCEO=100V ·High current :4A APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2	Original	2SC1108 O-220C 2SC1108 2SC110	PDF
3A 100V npn LOW SATURATION VOLTAGE Abstract: 2SC4330 NPN Transistor 8A WW-150 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4330 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 0.5V(Max)@ IC= 8A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V (Min) ·High Switching Speed APPLICATIONS	Original	2SC4330 3A 100V npn LOW SATURATION VOLTAGE 2SC4330 NPN Transistor 8A WW-150	PDF
2SB1031 Abstract: 2SD1435 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -8A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1435 APPLICATIONS	Original	-100V 2SD1435 -16mA -150mA -100V, -16mA; 2SB1031 2SD1435	PDF
BDY90A Abstract: Vceo 100V Ic 0.5A Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY90A DESCRIPTION •High Current Capability ·Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching	Original	BDY90A BDY90A Vceo 100V Ic 0.5A	PDF
2SB1079 Abstract: 2SD1559 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 APPLICATIONS	Original	-100V 2SD1559 -50mA -20mA -200mA -100V, 2SB1079 2SD1559	PDF
2SD525 Abstract: 2SB595 NIC Components 2SD525 Contextual Info: Product Specification www.jmnic.com 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ・Power amplifier applications	Original	2SD525 O-220C 2SB595 2SD525 2SB595 NIC Components 2SD525	PDF
2sb595 Abstract: 2SD525 100v pnp to220c Contextual Info: SavantIC Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD525 ·High breakdown voltage :VCEO=-100V ·Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS ·Power amplifier applications	Original	2SB595 O-220C 2SD525 -100V -100V; 2sb595 2SD525 100v pnp to220c	PDF
SILICON TRANSISTOR CORP Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060 Contextual Info: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP TVS07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V	OCR Scan	8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060	PDF
2SD525 Abstract: 2SB595 Contextual Info: SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ·Power amplifier applications	Original	2SD525 O-220C 2SB595 2SD525 2SB595	PDF
SMD BR Abstract: 2sc3438 2sc343 2SA1368 smd b_r Contextual Info: Transistors SMD Type High Voltage Drive Applications 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25	Original	2SA1368 -100V -800mA) 500mW 2SC3438 -10mA -150mA -15mA SMD BR 2sc3438 2sc343 2SA1368 smd b_r	PDF

VCEO 100V TRANSISTOR Search Results

VCEO 100V TRANSISTOR Result Highlights (5)

VCEO 100V TRANSISTOR Datasheets Context Search

NPN transistor collector base and emitter

NTE74

MARKING N93

NTE56

SMD TRANSISTOR MARKING km

TRANSISTOR HK SMD

germanium transistors NPN

2SC2499

2SD525

MJE4352

2SB595

417w

2SC1108

3A 100V npn LOW SATURATION VOLTAGE

2SB1031

BDY90A

2SB1079

2SD525

2sb595

SILICON TRANSISTOR CORP

2SD525

SMD BR