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    VCEO 100V TRANSISTOR Search Results

    VCEO 100V TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    VCEO 100V TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NPN transistor collector base and emitter

    Abstract: NTE96 10-32 UNF 2A
    Text: NTE96 Silicon NPN Transistor Power Switching Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		NTE96 10-32-UNF-2A NPN transistor collector base and emitter NTE96 10-32 UNF 2A PDF

    NTE74

    Abstract: 10-32 UNF NPN transistor collector base and emitter
    Text: NTE74 Silicon NPN Transistor General Purpose Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		NTE74 10-32-UNF-2A NTE74 10-32 UNF NPN transistor collector base and emitter PDF

    Untitled

    Abstract: No abstract text available
    Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.


    Original     		FCX493 FCX593 FCX493TA FCX493TC PDF

    MARKING N93

    Abstract: 4446 FCX493 FCX593 fcx493ta
    Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.


    Original     		FCX493 FCX593 FCX493TA FCX493TC MAX00 MARKING N93 4446 FCX493 FCX593 fcx493ta PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage


    Original     		2SD1006 100mA 500mA -10mA PDF

    NTE56

    Abstract: No abstract text available
    Text: NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		NTE56 NTE56 PDF

    SMD TRANSISTOR MARKING km

    Abstract: transistor smd marking KL smd marking Kk transistor smd KL transistor smd marking KK smd marking KM KM MARKING MARKING KL 2SB805 hFE CLASSIFICATION Marking
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB805 Features High collector to emitter voltage: VCEO -100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage


    Original     		2SB805 -100V. -100V, -100mA -500mA -50mA -10mA SMD TRANSISTOR MARKING km transistor smd marking KL smd marking Kk transistor smd KL transistor smd marking KK smd marking KM KM MARKING MARKING KL 2SB805 hFE CLASSIFICATION Marking PDF

    TRANSISTOR HK SMD

    Abstract: smd ic marking HL smd marking HK transistors marking HK HL 100 Transistor HL 06 ic 2SD1006
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage


    Original     		2SD1006 100mA 500mA -10mA TRANSISTOR HK SMD smd ic marking HL smd marking HK transistors marking HK HL 100 Transistor HL 06 ic 2SD1006 PDF

    2SD525

    Abstract: 2SB595
    Text: Inchange Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS


    Original     		2SD525 O-220C 2SB595 2SD525 2SB595 PDF

    MJE4352

    Abstract: MJE4353 MJE4350 MJE4351
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors MJE4350/4351/4352/4353 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min)- MJE4350 = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353


    Original     		MJE4350/4351/4352/4353 -100V MJE4350 -120V MJE4351 -140V MJE4352 -160V MJE4353 MJE4340/4341/4342/4343 MJE4352 MJE4353 MJE4350 MJE4351 PDF

    2SB595

    Abstract: 2SD525
    Text: Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD525 ・High breakdown voltage :VCEO=-100V ・Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS


    Original     		2SB595 O-220C 2SD525 -100V 2SB595 2SD525 PDF

    417w

    Abstract: tip30c TIP29C
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP29C DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30C


    Original     		TIP29C TIP30C 417w tip30c TIP29C PDF

    npn DARLINGTON 10A

    Abstract: TIP147T NPN Darlington Transistor TIP142T darlington power transistor 10a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Complement to Type TIP147T APPLICATIONS


    Original     		TIP147T Cycle20% npn DARLINGTON 10A TIP147T NPN Darlington Transistor TIP142T darlington power transistor 10a PDF

    2SC1108

    Abstract: 2SC110
    Text: Inchange Semiconductor Product Specification 2SC1108 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High breakdown voltage :VCEO=100V ·High current :4A APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2


    Original     		2SC1108 O-220C 2SC1108 2SC110 PDF

    2SB1031

    Abstract: 2SD1435
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -8A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1435 APPLICATIONS


    Original     		-100V 2SD1435 -16mA -150mA -100V, -16mA; 2SB1031 2SD1435 PDF

    BDY90A

    Abstract: Vceo 100V Ic 0.5A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY90A DESCRIPTION •High Current Capability ·Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching


    Original     		BDY90A BDY90A Vceo 100V Ic 0.5A PDF

    2SB1079

    Abstract: 2SD1559
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 APPLICATIONS


    Original     		-100V 2SD1559 -50mA -20mA -200mA -100V, 2SB1079 2SD1559 PDF

    2SD525

    Abstract: 2SB595 NIC Components 2SD525
    Text: Product Specification www.jmnic.com 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ・Power amplifier applications


    Original     		2SD525 O-220C 2SB595 2SD525 2SB595 NIC Components 2SD525 PDF

    2sb595

    Abstract: 2SD525 100v pnp to220c
    Text: SavantIC Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD525 ·High breakdown voltage :VCEO=-100V ·Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS ·Power amplifier applications


    Original     		2SB595 O-220C 2SD525 -100V -100V; 2sb595 2SD525 100v pnp to220c PDF

    2SD525

    Abstract: 2SB595
    Text: SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ·Power amplifier applications


    Original     		2SD525 O-220C 2SB595 2SD525 2SB595 PDF

    SMD BR

    Abstract: 2sc3438 2sc343 2SA1368 smd b_r
    Text: Transistors SMD Type High Voltage Drive Applications 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25


    Original     		2SA1368 -100V -800mA) 500mW 2SC3438 -10mA -150mA -15mA SMD BR 2sc3438 2sc343 2SA1368 smd b_r PDF

    germanium transistors NPN

    Abstract: CASE TYPE TO13 2N1326 npn germanium 2n539 2N1329 2N539A 2N538A 2N538 Germanium power
    Text: germanium power transistors /*Sl » PNP TO-13 lc M A X = 3A VcEO(SUS) = 30 to 100V Iif e Type# NPN Comple­ ment VCEO(SUS) (Volts) (Volts) @ Ic/VcE (Min-Max @ A/V) 2N1078 2N1328 2N1331 2N1333 2N1330 2N1329 2N1332 2N1334 60(Vces) 30(Vces) 80(Vces) IOO(Vces)


    OCR Scan     		2N1078 2N1328 2N1331 2N1333 2N1330 2N1329 2N1332 2N1334 2N1321 germanium transistors NPN CASE TYPE TO13 2N1326 npn germanium 2n539 2N539A 2N538A 2N538 Germanium power PDF

    2SC2499

    Abstract: 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor
    Text: Video Output Transistors for Video Display Terminal ^ P o j a r # y ' \ ^ ^ Package Description VcEO=10V, IcsO.SA fr=3.5GHz Vceo=18V, lc=0.6A fr=2.5GHz V ceo=100V, lc=0.5A D -P A C K TO-92 MOD '— TO-126 IS (Power-Mold) NPN 2SC3613 NPN 2SC4200 Remarks T0-220(NIS)


    OCR Scan     		300mA 400MHz 200MHz 2SC2705 2SA1145 2SC4203 O-126 2SC3613 O-220AB T0-220 2SC2499 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor PDF

    SILICON TRANSISTOR CORP

    Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
    Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V


    OCR Scan     		8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060 PDF