Untitled
Abstract: No abstract text available
Text: D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Type ”F” Nominal current Nennstrom 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden
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E175067
UL94V-0
UL94V-0
100/C
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VC60
Abstract: VC80 vc20 VC80 diode VC40 VC80F
Text: D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden
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E175067
UL94V-0
UL94V-0
100/C
tter\d30vc20-vc80
VC60
VC80
vc20
VC80 diode
VC40
VC80F
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VC60
Abstract: E175067 D30VC60 10-32 UNF M5 vc20 VC80 diode
Text: D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden
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E175067
UL94V-0
150LC
VC60
D30VC60
10-32 UNF M5
vc20
VC80 diode
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D30VC60
Abstract: VC40 VC80 vc20 VC60
Text: D30 VC20 … D30 VC80 Silizium-Doppeldioden Mittelpunktschaltung Silicon-Twin Rectifiers Center tap Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden
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Original
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PDF
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E175067
UL94V-0
UL94V-0
100/C
D30VC60
VC40
VC80
vc20
VC60
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VC80
Abstract: alu circuit with transistor
Text: D30 VC20 … D30 VC80 Silizium-Doppeldioden Mittelpunktschaltung Silicon-Twin Rectifiers Center tap Type “F” Type “W” Dimensions / Maße in mm Nominal current – Nennstrom 30 A Alternating input voltage – Eingangswechselspannung 60…250 V Dimensions – Abmessungen
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UL94V-0
100/C
VC80
alu circuit with transistor
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DIODE D60
Abstract: VC100 VC120 VC20 VC40 VC60 VC80 VC80 diode
Text: D60 VC20 … D60 VC120 Silicon-Twin Rectifiers Silizium-Doppeldioden Nominal current Nennstrom 60 A Alternating input voltage Eingangswechselspannung 60…800 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden Dimensions Abmessungen 28.5 x 28.5 x 10 [mm]
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VC120
UL94V-0
UL94V-0
E175067
150/C
100/C
DIODE D60
VC100
VC120
VC20
VC40
VC60
VC80
VC80 diode
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Untitled
Abstract: No abstract text available
Text: D60 VC20 … D60 VC120 Silizium-Doppeldioden Silicon-Twin Rectifiers Nominal current Nennstrom 60 A Alternating input voltage Eingangswechselspannung 60…800 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden Dimensions Abmessungen 28.6 x 28.6 x 10 [mm]
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VC120
UL94V-0
UL94V-0
E175067
150LC
100LC
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VC60
Abstract: diode d60
Text: D60 VC20 … D60 VC120 Silicon-Twin Rectifiers Silizium-Doppeldioden Nominal current Nennstrom 60 A Alternating input voltage Eingangswechselspannung 60…800 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden Dimensions Abmessungen 28.5 x 28.5 x 10 [mm]
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Original
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VC120
UL94V-0
UL94V-0
E175067
150/C
100/C
VC60
diode d60
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DIODE D60
Abstract: D60VC120F
Text: D60 VC20 F … D60 VC120 F Silicon-Twin Rectifiers Silizium-Doppeldioden Nominal current Nennstrom 60 A Alternating input voltage Eingangswechselspannung 60…800 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden Dimensions Abmessungen 28.6 x 28.6 x 10 [mm]
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VC120
UL94V-0
VC100
100atur
150/C
100/C
100/C
DIODE D60
D60VC120F
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pnp 1500v 8a
Abstract: fr120 2SD1548 2SD2253 2SC4352 2sc5027 2SC2706 2SD2499 2sc4544 diode 6a 250v
Text: Horizontal Deflection Output Transistors for Color TV Description Ic For Small Screen Color TV VC80=1500V TO-3P H (BS) 2.5A 3.5A 2.5A 3.SA 3.5A 5A 2SD1431 2SD1432 6A 2SD1433 2SD1427 SA 6A 2SD1428 8A 10A 6A 7A 9A For Largs 16:9 Sctmh Color TV Vcao=1700V For Large 16:9 Screw Color TV
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1S00V
2SD1543
2SD1544
2SD1553
2SD1554
2SD2089
2SD1545
2SD1546
2SD2498
2SD1547
pnp 1500v 8a
fr120
2SD1548
2SD2253
2SC4352
2sc5027
2SC2706
2SD2499
2sc4544
diode 6a 250v
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BF959
Abstract: No abstract text available
Text: R a tin g Sym bol V alue U n it C o U e c to r-E m itte r V olta g e VCEO 20 Vdc C o lle c to r-B a s e V olta g e VC80 30 Vdc E m itte r-B a s e V olta g e VEBO 3 0 Vdc C o lle ctor C u rre n t - C o n tin u o u s 'C 100 mAdc To tal D e v ic e D i s s i p a t i o n @ T a = 2 5 ° C
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BF959
BF959
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transistor bsr60
Abstract: BSR60 NPN Darlington transistor BSR61 bsr62
Text: Philips Semiconductors Product specification PNP Darlington transistors BSR60; BSR61 ; BSR62 FEATURES PINNING • High current max. 1 A PIN DESCRIPTION • Low voltage (max. 80 V) 1 base • Integrated diode and resistor. 2 collector 3 emitter APPLICATIONS
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BSR60;
BSR61
BSR62
BSR50,
BSR51
BSR52.
BSR60
BSR61
BSR62
transistor bsr60
NPN Darlington transistor
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DIODE F22
Abstract: 1300 3d
Text: ptot VCE0 VCB0 VCEX* T/v=25°C min. <W> V 10 tt 1300* 10 tt 1500* 10 tt 1500* t 1700* 10 t 12.5 # 1300* 12.5 tt 1500* 12.5 t t 1500* t 1500* 12.5 t t 1700* 12.5 t 60 400 60 400 60 330 330 60 400 60 400 60 1300 75 75 1500 1700 75 400 90 400 90 330 90 90 330
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O-220
DIODE F22
1300 3d
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102 TRANSISTOR
Abstract: KD221 KD221K03 VC80 X1000
Text: m M B E X KD221K03 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D d r lin Q t O H Transistor Module 30 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD221
Amperes/1000
EIC20-
102 TRANSISTOR
KD221K03
VC80
X1000
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRAN SISTOR M O D U LES ! HIGH POWER SWITCHING U SE INSULATED TYPE f QM75DY-HB I j QNI750Y-HB • Ic • Vcex Collector current.75A Collector-emitter voltage. 600V • hFE DC current gain. 750
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QM75DY-HB
QNI750Y-HB
E80276
E80271
QM75DY-HB
15QmAIS
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BDV64C
Abstract: BDV64B B0V64B 8DV64B
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK • • JU NE 1993 - R E V IS E D M A R C H 1997 Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C SOT-93 P A C KA G E TOP VIEW
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BDV64,
BDV64A,
BDV64B,
BDV64C
BDV65,
BDV65A,
BDV65B
BDV65C
OT-93
BDV64
BDV64B
B0V64B
8DV64B
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BDX67
Abstract: transistor bdx66 BDX66B HC10A BDX66 BDX67C transistor NES BDX66A BDX66C BDX67A
Text: SEMELAB LIMITED J^e>x oloC 2 iûOH.Ci(o. SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A,
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BDX67,
BDX67A,
BDX67B
BDX67C.
BDX66
7Z57S01
BDX67
transistor bdx66
BDX66B
HC10A
BDX66
BDX67C
transistor NES
BDX66A
BDX66C
BDX67A
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BDX34C
Abstract: BOX34 BDX34B transistor BDX34 65 AIR LB 8DX34A
Text: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SIUCON POWER DARLINGTONS Copyright 1997. Power Innovations Limited, UK_ • AUGUST 1983 - REVISED MARCH 1907 Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D • 70 W at 25°C Case Temperature
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BDX34,
BDX34A,
BDX34B,
BDX34C,
BDX34D
BDX33,
BDX33A,
BDX33B,
BDX33C
BDX33D
BDX34C
BOX34
BDX34B
transistor BDX34 65
AIR LB
8DX34A
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BDT60C ST
Abstract: BDT60C
Text: BDTBO, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARUNGTONS Copyright 1997, Powet Innovations Limited, UK_ A U G U S T 1993 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C • 50 W at 25°C Case Temperature
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BDT60A,
BDT60B,
BDT60C
BDT61,
BDT61A,
BDT61B
BDT61C
T0-220
BDT60
BDT60A
BDT60C ST
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TRANSISTOR TT 2158
Abstract: 1200 va ups circuit diagram QM600HA-2H QM600HA-2HK QM600HA qm600
Text: MITSUBISHI TRANSISTOR MODULES .p f c V -V QM600HA-2HK m W HIGH POWER SWITCHING USE INSULATED TYPE QM600HA-2HK Collector current.600A j Collector-emitter voltage. 1000V j hFE DC current gain. 75
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QM600HA-2HK
TRANSISTOR TT 2158
1200 va ups circuit diagram
QM600HA-2H
QM600HA-2HK
QM600HA
qm600
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Untitled
Abstract: No abstract text available
Text: f M ITSUBISHI TRAN SISTOR M O D U LES ! QM75E2Y/E3Y-H | HIGH POWER SWITCHING USE Í _INSULATED TYPE j QM75E2Y/E3Y-H • Ic • V cex • hFE Collector current. 75A Collector-emitter voltage. 600V
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QM75E2Y/E3Y-H
E80276
E80271
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vertical IC tv crt
Abstract: 2sc3503 2sc378s
Text: • SIUCON TRANSISTORS FOR TV/VTR USE TV/CRT DISPLAY APPLICATIONS I e New* {Classified by package and arranged in order of increasing Pp. Minus sign for PNP is omitted due to space limitations.) fol» Muuhr Applications Absolut« Maximum Ratings/T4 = 25t!
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6DI30A-050
Abstract: GGT DIODE M603 b1476 TJI-25
Text: 6DI3OA-O5O 30a ✓< 7 - — ’S ± y < I7 - ^ > o . - ) U : Outline Drawings ) V POWER TRANSISTOR MODULE (m)| H.5 7 ~H.iT , H.5 , 11.5 (101 F e a tu re s 7 l) — U > ? ? ' ( # — K rt# 'h F E ^ 'iS i.' In c lu d in g Free W h e e lin g D iode H igh DC C u rrent Gain
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E82988
6DI30A-050
GGT DIODE
M603
b1476
TJI-25
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES i QM300DY-24 j j j HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 • Ic • V cex • hFE Collector current. 300A
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QM300DY-24
QM300DY-24
E80276
E80271
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