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    VBE 8 V Search Results

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    VBE 8 V Price and Stock

    Samtec Inc HLE-108-02-G-DV-BE-K-TR

    Headers & Wire Housings Cost-Effective Reliable Socket, .100" (2.54 mm) Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HLE-108-02-G-DV-BE-K-TR 760
    • 1 $3.38
    • 10 $3.38
    • 100 $2.66
    • 1000 $2.33
    • 10000 $2.17
    		Buy Now

    Samtec Inc HLE-108-02-F-DV-BE-A-K-TR

    Headers & Wire Housings Cost-Effective Reliable Socket, .100" (2.54 mm) Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HLE-108-02-F-DV-BE-A-K-TR 468
    • 1 $2.98
    • 10 $2.98
    • 100 $2.27
    • 1000 $2.14
    • 10000 $1.38
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    C&K TP12SH8AVBE

    Pushbutton Switches ON-MOM SPDT RA PC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TP12SH8AVBE 377
    • 1 $9.47
    • 10 $8.2
    • 100 $7.25
    • 1000 $7.07
    • 10000 $7.07
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    Samtec Inc SSM-108-L-DV-BE

    Headers & Wire Housings Surface Mount PCB Socket Strips, .100" pitch
    Free Sample
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    Mouser Electronics SSM-108-L-DV-BE 93
    • 1 $3.51
    • 10 $3.51
    • 100 $2.9
    • 1000 $2.04
    • 10000 $1.22
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    NXP Semiconductors KITPF0100SKTEVBE

    Sockets & Adapters Evaluation Board - MMPF0100, OTP Programming Socket for the PF Family of PMIC Devices
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics KITPF0100SKTEVBE 18
    • 1 $200.74
    • 10 $200.74
    • 100 $200.74
    • 1000 $200.74
    • 10000 $200.74
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    Find more VBE 8 V price and stock on Findchips.com

    VBE 8 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CSA 70

    Abstract: No abstract text available
    Text: VBE 20 / VUE 30 Advanced Technical Information Single / Three Phase Rectifier Bridge VRRM IdAV 1~ IdAV (3~) trr with Fast Recovery Epitaxial Diodes (FRED) VRSM V VRRM V Type Single Phase Type Three Phase 2000 2000 VBE 20-20NO1 VUE30-20NO1 5 6 10 1 5 6 8 10 1


    Original     		PDF 20-20NO1 VUE30-20NO1 D-68623 CSA 70

    FMMT2907

    Abstract: FMMT2907A FZT2907 FZT2907A DSA003709
    Text: FZT2907 FZT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL FMMT2907 FMMT2907A MIN. MIN. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0


    Original     		PDF FZT2907 FZT2907A FMMT2907 FMMT2907A 100KHz -150mA, -15mA -150mA FMMT2907 FMMT2907A FZT2907 FZT2907A DSA003709

    MPS2907A

    Abstract: No abstract text available
    Text: MPS2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=-2V, IC=0 f=100KHz Turn On Time ton 50 ns


    Original     		PDF MPS2907A 100KHz -150mA -15mA -150mA, -15mA* MPS2907A

    2-21F1A

    Abstract: No abstract text available
    Text: Rziz Ta=25"C EIAJ 37 i% : hFE(lja%i R : 55-110, 0 : 80-160 25 2-21F1A -16 "0 -4 -8 3lJ5J$J.X$ -12 hm - Ic -I 6 -20 IC - VBE -0.4 - 0.8 -i - ;( . I. $ 9 VCE(sat) -1.2 - 1.6 - IC 500 300 -1 !z Jz 100 # @ ?s #nJ -0.5 / 50 30 p, t( 10 5 P, Jb 1 3 -,0.05 - 0.03


    Original     		PDF 2-21F1A 2-21F1A

    FZT951

    Abstract: FZT953 fzt853 FZT851 DSA003718
    Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps


    Original     		PDF FZT951 FZT953 OT223 FZT951 FZT851 FZT853 FZT953 fzt853 FZT851 DSA003718

    Untitled

    Abstract: No abstract text available
    Text: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )


    Original     		PDF BUX33A BUX33B BUX33 300ms,

    2N5153

    Abstract: 2N5151 2N5152 2N5154
    Text: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . DESCRIPTION 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 3 2 .5 4 (0 .1 0 0 )


    Original     		PDF 2N5152 2N5154 2N5152 2N5154 2N5151 2N5153 20MHz 300ms

    pnp 10A

    Abstract: 5A25T SLA4313
    Text: SLA4313 NPN Silicon Epitaxial Planar PNP □Absolute maximum ratings Parameter （Ta＝25℃） Symbol NPN PNP Unit Collector-Base Voltage VCBO 35 −35 V Collector-Emitter Voltage VCEO 35 −35 V Emitter-Base Voltage VEBO 6 −6 V Collector Current IC 5 −5


    Original     		PDF SLA4313 IC/IB10) pnp 10A 5A25T SLA4313

    Untitled

    Abstract: No abstract text available
    Text: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS POWER 30/45/65 Volts VOLTAGE 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives.


    Original     		PDF BC846AW BC850CW OT-323 100mA 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2012-REV

    A114F

    Abstract: No abstract text available
    Text: 97.07,/ <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGTURJS U gdq FJ<G6;<A: 64C45<?<GL v<?8 }Bbnueghiek U h>0 7<8?86GE<6 FGE8A:G; ]58GJ88A 6B<? 4A7 6BAG46GF^ U s?4FF v <AFH?4G<BA 4I4<?45?8 v<?8 }Bbn,ideihkff U g@@ 6BAG46G :4C 4I4<?45?8 U uAI<EBA@8AG4? 9E<8A7?L CEB7H6G ],Bx- 6B@C?<4AG^


    Original     		PDF 64C45< 58GJ88A 6BAG46GF^ 6BAG46G sBAG46G FG4A68 sBAG46G A114F

    ZTX556

    Abstract: ZTX557 DSA003769
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX556 ZTX557 ISSUE 1 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ts µs µs IC/IB=10 IB1=IB2=IC/10 16 4 3 -0.4 -0.2 tf 12 tr 2 -0.0001


    Original     		PDF ZTX556 ZTX557 IC/10 -50mA, -10mA, 100MHz ZTX556 ZTX557 DSA003769

    BUX16

    Abstract: voltage regulators 300v dc BUX16/A BUX16A BUX16B BUX16C
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX16/A/B/C DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C ·High Power Dissipation


    Original     		PDF BUX16/A/B/C BUX16 BUX16A BUX16B BUX16C BUX16 voltage regulators 300v dc BUX16/A BUX16A BUX16B BUX16C

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8211A MCH3145/MCH3245 Bipolar Transistor http://onsemi.com – 50V, (–)2A, Low VCE(sat), (PNP)NPN Single MCPH3 Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • Large current capacity Adoption of MBIT processes


    Original     		PDF EN8211A MCH3145/MCH3245 MCH3145

    BC850CW

    Abstract: No abstract text available
    Text: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS POWER 30/45/65 Volts VOLTAGE 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives.


    Original     		PDF BC846AW BC850CW OT-323 100mA 2002/95/EC IEC61249 OT-323, MIL-STD-750, BC846AW BC846BW BC850CW

    Untitled

    Abstract: No abstract text available
    Text: 97.07,. <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGUVSJT V gdq FJ<G6;<A: 64C45<?<GL v<?8 }Bbnueghiek V h>0 7<8?86GE<6 FGE8A:G; ]58GJ88A 6B<? 4A7 6BAG46GF^ V g@@ 6BAG46G :4C 4I4<?45?8 v<?8 }Bbn,ideihkff V /{ <AFH?4G<BA FLFG8@n s?4FF v 4I4<?45?8 V uAI<EBA@8AG4? 9E<8A7?L CEB7H6G ],Bx- 6B@C?<4AG^


    Original     		PDF 64C45< 58GJ88A 6BAG46GF^ 6BAG46G sBAG46G FG4A68 sBAG46G

    sbw13009

    Abstract: No abstract text available
    Text: SBW13009 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 40ns@8.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A


    Original     		PDF SBW13009 320mV O-247 O-247 sbw13009

    SBP13

    Abstract: SBP13009A SBP-13
    Text: SemiWell Semiconductor SBP13009A High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 60ns@8.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A


    Original     		PDF SBP13009A 320mV O-220 O-220 SBP13 SBP13009A SBP-13

    SBP13009

    Abstract: No abstract text available
    Text: SBP13009 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 40ns@8.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A


    Original     		PDF SBP13009 320mV O-220 O-220 SBP13009

    FZT857

    Abstract: FZT957 FZT958 DSA003675
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp


    Original     		PDF OT223 FZT957 FZT958 FZT957 FZT857 FZT958 -100mA, 50MHz FZT857 DSA003675

    MJD122T4G

    Abstract: TRANSISTOR MJD122
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122T4G TRANSISTOR MJD122

    2N3904

    Abstract: NPN 2n3904 2N2222 npn 2n2222 2N2222A 2SD1803 AIC1638 AIC1639 Si2302DS AN00-SR05EN
    Text: AN00-SR05EN Optimized external driver for AIC1639 Stanley Chen Introduction AIC1639 is a member of AIC1638 PFM （ Pulse Frequency Modulation ） controller IC family, for step-up DC/DC converter featuring high efficiency and low ripple voltage, which is exactly the same as


    Original     		PDF AN00-SR05EN AIC1639 AIC1639 AIC1638 AIC1638 100KHz 2N3904 NPN 2n3904 2N2222 npn 2n2222 2N2222A 2SD1803 Si2302DS AN00-SR05EN

    2n6259

    Abstract: 2n4348
    Text: POWER TRANSISTORS PT TYPE NO. TO-3 MAXIMUM RATINGS Ic 25*C BVcbo BVceo BVebo A V V V Watts hrE @ <5 MIN MAX Ic A VCE V Sat Test Voltages Conditions Ib VcE Vbe Ic I ebo V A V A ma 2N3773 150 160 140 7 16 15 60 8 4 1.4 2.2 8 .8 5 2N4348 120 140 120 7 10 15 60


    OCR Scan     		PDF 2N3773 2N4348 2N6259 TWX-510-224-6582 T0-58 O-114 00435c 2n6259 2n4348

    PN4250

    Abstract: 2N4248 2N4288 2N4249 2N4250A 2N4250
    Text: This Material PNP Transistors Copyrighted 3> —3 LOW LEVEL AMPS C«a Style Vc b o V Min v CEO (V) Min vebo 2N2604 TO-46 60 45 6 By Type No. (V) Min •CBO VCB (nA) (V) Max 10 *>FE 'C » VCE Min Max (mA| (V) 350 45 10 VCE(SAT) VBE(SAT) (V) 8. (V) »


    OCR Scan     		PDF bSD1130 0035M4E PN4250 2N4248 2N4288 2N4249 2N4250A 2N4250

    2N2067

    Abstract: 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1183 2N1184A
    Text: germanium power transistors PNP TO-8 lc M A X — hFE @ Ic / V c E Type# 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B V c e o is u s ) (Volts) 20 30 40 20 30 40 V ebo (Volts) (Min-Max @ A/V) Vbe V c E lS A T J @ Ic / Ib (V (S> A/A) 20 20 20 20 20 20 @ Ic/VcE


    OCR Scan     		PDF 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B 2N1183 Ind50-100/3/2 2N1541S 2N15425 2N2067 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1184A