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    V06C Search Results

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    V06C Price and Stock

    Panduit Corp HSTTV06-C

    HEATSHRINK 1/16" X 100' BLACK
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    DigiKey HSTTV06-C Bulk 1
    • 1 $77.93
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    Avnet Americas HSTTV06-C Bulk 8 Weeks 1
    • 1 $67.318
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    Mouser Electronics HSTTV06-C 2
    • 1 $70.76
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    Newark HSTTV06-C Bulk 1
    • 1 $95.84
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    RS HSTTV06-C Reel 1
    • 1 $85.99
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    Interstate Connecting Components HSTTV06-C 1
    • 1 $97.3
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    Master Electronics HSTTV06-C 4
    • 1 $114.65
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    Sager HSTTV06-C 1
    • 1 $74.85
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    Kyocera AVX Components SV06CC184KAR

    CAP CER 0.18UF 630V X7R RADIAL
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    DigiKey SV06CC184KAR Bulk 200
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    Panduit Corp PR2V06CACWH-N

    RACKS
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    Kyocera AVX Components SV06CC103KAR

    GV LEADED SPECIAL - Bulk (Alt: SV06CC103KAR)
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    Avnet Americas SV06CC103KAR Bulk 20 Weeks 200
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    Kyocera AVX Components SV06CA222JAATR1

    GV LEADED SPECIAL - Tape and Reel (Alt: SV06CA222JAATR1)
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    Avnet Americas SV06CA222JAATR1 Reel 20 Weeks 500
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    Find more V06C price and stock on Findchips.com

    V06C Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    V06C
    		Renesas Technology 200V 1.1A RECTIFIER DIODE Original PDF
    V06C
    		Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    V06C
    		Unknown Cross Reference Datasheet Scan PDF
    V06C
    		Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    V06C
    		Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    V06C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1S2082

    Abstract: 1S2080 V06C V06J V06E V06G diode V06C
    Contextual Info: GENERAL-USE RECTIFIER DIODE Unit in mm inch • ft Ä • -« * * * » « OUTLINE DRAWING D ire ctio n o f polarity ■FEATURES • F o r general purpose. • Diffused-junction. G lass encapsulated. to <*5 Ö^ passivated I : and Color of cathode band V06C(200V) Black


    OCR Scan     		1S2080 1S2Q81 1S2082 180X1 V06C V06J V06E V06G diode V06C PDF

    V06G

    Abstract: V06C V06E V06J PDJ-V06-0 V06C POWER RECTIFIER 11AP
    Contextual Info: GENERAL-USE RECTIFIER DIODE V06 OUTLINE DRAWING 29MIN. 1.14 長 62MIN. (2.44) • 一般電源整流用 •拡散接合形ガラスモールド構造 V06C (200V) V06E (400V) V06G (600V) V06J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX


    Original     		29MIN. 62MIN. PDJ-V06-0 V06G V06C V06E V06J PDJ-V06-0 V06C POWER RECTIFIER 11AP PDF

    V06C

    Abstract: V06C HITACHI hitachi V06E V06-C diode V06C hitachi V06 hitachi rectifier V06C V06E V06J PDE-V06-0
    Contextual Info: GENERAL-USE RECTIFIER DIODE V06 OUTLINE DRAWING V06C 200V V06E (400V) V06G (600V) V06J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Cathode band • For general purpose.


    Original     		29MIN. 62MIN. V06C V06C HITACHI hitachi V06E V06-C diode V06C hitachi V06 hitachi rectifier V06C V06E V06J PDE-V06-0 PDF

    V06E

    Contextual Info: GENERAL-USE RECTIFIER DIODE V06 FEATURES OUTLINE DRAWING • For general purpose. • Diffused-junction. Glass passivated and encapsulated. ABSOLUTE MAXIMUM RATINGS Item Type V06C V06E V06G V06J Repetitive Peak Reverse Voltage V RRM V 200 400 600 800 Non-Repetitive Peak Reverse Voltage


    Original     		PDE-V06-2 V06E PDF

    V06G

    Abstract: V0-6 11AP
    Contextual Info: GENERAL-USE RECTIFIER DIODE V06 OUTLINE DRAWING V06C 200V V06E (400V) V06G (600V) V06J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Cathode band • For general purpose.


    Original     		62MIN. 29MIN. PDE-V06-0 V06G V0-6 11AP PDF

    V06C

    Abstract: hitachi V06E V06G V06C HITACHI hitachi rectifier V06C v06e V06J diode v06 hitachi PDE-V06-0 V06E diode
    Contextual Info: GENERAL-USE RECTIFIER DIODE V06 OUTLINE DRAWING V06C 200V V06E (400V) V06G (600V) V06J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Cathode band • For general purpose.


    Original     		29MIN. 62MIN. V06C hitachi V06E V06G V06C HITACHI hitachi rectifier V06C v06e V06J diode v06 hitachi PDE-V06-0 V06E diode PDF

    d1763

    Abstract: d1780 D1780 transistor TRANSISTOR D1792 D1789 transistor D1795 D1789 NT 407 F transistor D1778 D1795 transistor
    Contextual Info: PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of


    Original     		NEL2012F03-24 NEL2012F03-24 d1763 d1780 D1780 transistor TRANSISTOR D1792 D1789 transistor D1795 D1789 NT 407 F transistor D1778 D1795 transistor PDF

    HY628400LLG-I

    Abstract: DV06 138-884
    Contextual Info: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY628400-I 512Kx 1DE02-11-MAY95 HY628400LP-I HY628400LLP-I HY628400LG-I HY628400LLG-I DV06 138-884 PDF

    V06C HITACHI

    Abstract: DHM3K20 DHM3HC80 hitachi rectifier U05B DHM3G80 DFM1SA DHM3FG80 DAM3A HITACHI DFG2A hitachi V03C
    Contextual Info: Diodes Axial • it m. Lead Type v-vwmm* mm#*- m¿2&&r¿3>cy7 vyz^mm^ l«-?íf5o t t x - yy yya iFeatures ►Hitachi diodes are available for any kind of applications. The versatile lineup includes general use rectifier diodes, surge-absorbing devices, high-voltage


    OCR Scan     		AW01-06 AW01/AU01-07 V06C HITACHI DHM3K20 DHM3HC80 hitachi rectifier U05B DHM3G80 DFM1SA DHM3FG80 DAM3A HITACHI DFG2A hitachi V03C PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    nec 0882

    Abstract: transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec
    Contextual Info: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of


    OCR Scan     		NEL2012F03-24 NEL2012F03-24 nec 0882 transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec PDF

    NEC CI 506

    Abstract: NEL2012F03-24 P11768EJ1V0DS00 V06C transistor 1654 transistor 1653 1656 nec nec 150 j04
    Contextual Info: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of


    OCR Scan     		NEL2012F03-24 NEL2012F03-24 DICLAD522TÂ NEC CI 506 P11768EJ1V0DS00 V06C transistor 1654 transistor 1653 1656 nec nec 150 j04 PDF

    ZSH5MAZ27

    Abstract: ZSH5MA27 ZSH5MT V06C HITACHI ZSH5MT27 IN 47 serise zener diodes data ZSA5A27 hitachi rectifier U05B DSA3A1 V06C
    Contextual Info: Status List Date:Nov. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant Included RoHS exemption substance N:Non compliant Production Status M:Mass production O:Order production W:Working sample A:Abolition •General-Use Rectifier Diodes


    Original     		KS10008 ZSH5MAZ27 ZSH5MA27 ZSH5MT V06C HITACHI ZSH5MT27 IN 47 serise zener diodes data ZSA5A27 hitachi rectifier U05B DSA3A1 V06C PDF

    ZSH5MAZ27

    Abstract: ZSH5MA27 U05B ZSH5MC27 ZSH5MA27A DSM3MA1 V06C H114B DHM3G80 DSA3A1
    Contextual Info: ステータスリスト 2010.11 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 ◎：適合 ○：適合（但し適用除外項目物質を含有） 【ステータス】 ◎：量産品 ○：受注生産品 ▲：未対応


    Original     		KS10007 ZSH5MAZ27 ZSH5MA27 U05B ZSH5MC27 ZSH5MA27A DSM3MA1 V06C H114B DHM3G80 DSA3A1 PDF

    1S2080

    Abstract: 1S2082 V06T V06C HITACHI V06C 1S2081 V06J hitachi V06E hitachi rectifier V06C hitachi V06
    Contextual Info: - ^ 4 9 6 2 O 5 HITACHI M Ü P T O E L h ü T R O N l U ä ^ • — Ä S V06 ^ ; 6 8 C 0 9 7 9 2 . 0 ô/'/X 'f ^ — K General-Use Rectifier Diode bû DE J ^ b E O S QDOTT^E -6 2 M IW 2 .4 4 )-2 9M IN 5 .0 M A X ¿ 3.5M A X (0.14)


    OCR Scan     		-62MIW2 29MIN 29MIN 1S2080 1S2081 1S2082 50//F 22/isec 1S2082 V06T V06C HITACHI V06C V06J hitachi V06E hitachi rectifier V06C hitachi V06 PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p PDF