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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 TO-251  FEATURES * RDS ON < 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  1 TO-252 SYMBOL


    Original
    PDF UT50N03 O-251 O-252 O-252D UT50N03L-TM3-T UT50N03G-TM3-T UT50N03L-TN3-T UT50N03G-TN3-T UT50N03L-TN3-R UT50N03G-TN3-R

    168E

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 50A, 30V N-CHANNEL POWER MOSFET  FEATURES * RDS ON < 14 mΩ @ VGS = 10 V, ID = 30 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified   SYMBOL ORDERING INFORMATION


    Original
    PDF UT50N03 UT50N03L-TM3-T UT50N03G-TM3-T UT50N03L-TN3-R UT50N03G-TN3-R UT50N03L-TND-R UT50N03G-TND-R O-251 O-252 O-252D 168E

    UT50N03

    Abstract: UT50N03L-TN3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ FEATURES * RDS ON = 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain *Pb-free plating product number: UT50N03L


    Original
    PDF UT50N03 UT50N03L UT50N03-TN3-R UT50N03L-TN3-R UT50N03-TN3-T UT50N03L-TN3-T O-252 QW-R502-168 UT50N03 UT50N03L-TN3-T

    168B

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET „ 1 FEATURES TO-252 * RDS ON = 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ 1 SYMBOL TO-251 2.Drain


    Original
    PDF UT50N03 O-252 O-251 UT50N03L-TM3-T UT50N03G-TM3-T UT50N03L-TN3-R UT50N03G-TN3-R UT50N03L-TN3-T UT50N03G-TN3-T 168B