UT2N1 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2N10 Preliminary Power MOSFET 2 Amps,100 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2N10 Preliminary Power MOSFET 2 Amps,100 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2N10 Preliminary Power MOSFET 2 Amps,100 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off

Contextual Info: UT2N10 Preliminary Power MOSFET 2 Amps,100 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2N10 Preliminary Power MOSFET 2 Amps,100 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off

us2p-1

Abstract: ut2n1 US1D2
Contextual Info: • D EV LI N Ultra Miniature Toggle & Slide Switches: UT I US Series Slide Switches - US range US1-1 SPDT straight mount "T10 5.6 . U s.s- Part No. ■ _ _ ■ ■ US1D-1 On None On US1E-1 On O ff On US2-1 DPDT straight mount — I Features — “ C m