65G5
Abstract: NEC 4216165-60
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S 16165, 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /¿PD42S16165, 4216165 are 1,048,576 w ords by 16 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S16165
uPD4216165
16-BIT,
PD42S16165,
PD42S16165
50-pin
42-pin
uPD42Sl6l65-50
iuPD42S16165-60
65G5
NEC 4216165-60
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RE300
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /fPD42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode _ _ capability realize high speed access and low pow er consumption.
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uPD42S17800L
uPD4217800L
The/iPD42S17800L,
4217800L
pPD42S17800L
28-pin
17800L
7800L-A
uPD42Sl
RE300
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Untitled
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT r>D42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The /¿PD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynam ic CMOS RAMs. These d iffe r in refresh cycle and the ¿¿PD42S16800L, 42S17800L can execute CAS before RAS self refresh see
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D42S16800L,
4216800L,
42S17800L,
4217800L
uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
42S17800L
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NEC 4218165-60
Abstract: PD42S18165-60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿IPD42S18165, 4218165 16 M-BIT DYNAM IC RAM 1 M-W ORD BY 16-BIT, EDO, BYTE READ/W RITE MODE D e s c rip tio n The luPD42S18165, 4218165 are 1.048.576 words by 56 bits CMOS dynamic RAMs with optional EDO, EDO is a kind of the page mode and is useful for the read operation.
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uPD42S18165
uPD4218165
16-BIT,
luPD42S18165
/rPD42S18165
42S18165.
50-pin
42-pin
PP42S18165,
IR35-207-3
NEC 4218165-60
PD42S18165-60
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