Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT iu P D 4 2 6 4 1 6 0 , 4 2 6 5 1 6 0 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE Description The ,uPD426416 0 ,4 2 6 5 1 6 0 are 4,194,304 w ords by 16 bits dynam ic CMOS RAMs. The fast page mode capability
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OCR Scan
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16-BIT,
uPD426416
50-pin
D4265160-A50
D4264160-A60
D4265160-A80
uPD4264160-A80
D4265160-A70
D4264cj
5-80-7JF3
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PDF
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UPD4265160-A60
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4264160, 4265160 6 4 M -B IT D YN A M IC RAM 4 M -W O R D BY 16-BIT, FAST PAGE M O DE Description The /iPD 4264160,4265160 are 4,194,304 words by 16 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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uPD4264160
uPD4265160
16-BIT,
50-prn
JPD4264160-A50
/PD4265160-A50
/PD4264160-A60
UPD4265160-A60
S50G5-80-7JF3
/iPD4264160,
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT NEC mP D 4264165, 4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.
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OCR Scan
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16-BIT,
uPD4264165
uPD4265165
iPD4264165,
50-pin
HPD4264165-A60,
4266165-A50
426E16S-A60
HPD426416S-A70,
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD 4264160, 4265160 64 M BIT DYNAMIC RAM 4M -W O R D BY 16-BIT, FAST PAGE MODE Description The /iPD4264160, 4265160 are 4,194,304 words by 16 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.
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OCR Scan
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16-BIT,
uPD4264160
uPD4265160
50-pin
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PDF
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uPD4265160
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D escrip tio n The /iPD4264160,4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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uPD4264160
uPD4265160
16-BIT,
/iPD4264160
50-pin
/iPD4264160-A50
PD4265160-A50
/xPD4264160-A60
/jPD4265160-A60
juPD4264160-A70
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PDF
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4265165G5
Abstract: Oil 00037
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT IMEC uPD4264165,4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.
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OCR Scan
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16-BIT,
uPD4264165
uPD4265165
iPD4264165,
50-pin
IPD4264165-A50,
4265165-AS0
HPD4264165-A60,
426S165-A60
HPD4264165-A70,
4265165G5
Oil 00037
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M BIT DYNAMIC RAM 4M-W ORD BY 16-BIT, FAST PAGE MODE Description The /iPD4264160, 4265160 are 4,194,304 words by 16 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.
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OCR Scan
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PD4264160,
16-BIT,
/iPD4264160,
50-pin
265160-A
264160-A
S50G5-80-7JF3
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PDF
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SI HV5
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿ ¿ P D 4 2 6 4 16 5 , 4 2 6 5 16 5 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READA/VRITE MODE Description T h e;/P D 426 416 5, 4265165 are 4,194.304 w ords by 16 bits C M OS dynam ic RAMs with optional h yper page mode
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OCR Scan
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16-BIT,
50-pin
uPD4264165-A50
uPD4265165-A50
uPD4264165-A60
uPD4265165-A60
S50GS-80-7JF3
PD4264165,
iPD4264165G5-7JF,
65165G
SI HV5
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PDF
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BIPD
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ffP P 4264165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAQE MODE EDO , BYTE READ/WRITE MODE D escription The /iPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
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OCR Scan
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16-BIT,
uPD4264165
50-pin
jjPD4264165-A50
jjPD4265165-A50
/jPD426416S-A60
iPD4265165-A60
-60-7JF
PD4264165,
426St65
BIPD
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PDF
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