UPD42 Search Results

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

nec 14t tv

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / uPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /UPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

d42s

Abstract: n010 marking
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT uPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M -W ORD BY 4-BIT, EDO Description The ,uPD42S16405L, 4216405L are 4,194,304 w ords by 4 bits CMOS dynam ic RAM with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

upd4265

Abstract: 4265 AAFW
Contextual Info: SEC /iP D 4 2 6 5 6 5 ,5 3 6 x 1 -B IT D Y N A M IC CMOS RAM NEC Electronics Inc. Revision 1 Pin Configuration D e scrip tio n T h e N E C /UPD4265 is a 6 5 ,5 3 6 -w o rd b y 1 -b it d y n a m ic C M O S R a n d o m A c c e s s M e m o ry R A M d e s ig n e d to

Contextual Info: NEC pPD424900A/L, 42S4900A/L 524,288 X 9-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The ¿/PD424900A/L and /UPD42S4900A/L are fast-page dynam ic RAMs organized as 524,288 words by 9 bits a nd designed to o p e ra te from a single power supply. O ptional features are pow er supply voltage + 5 V or

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ /¿¿P P 42S 16400, 4216400, 42S 17400,4217400 16 M-BIT DYNAM IC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The ,uPD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CM O S dynamic RAM s. The

IPD42S18165-60

Abstract: tfk 014 PD42S18165 HV Tr 3 TFK 227 PD4218165
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿ P D 4 2 S 1 8 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The ,uPD42S18165,4218165 are 1,048,576 words by 16 bits C M O S dynamic RAMs with optional hyper page mode

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,uPD42S18160L, 4218160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

NEC 424400-80

Abstract: NEC 424400-60
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT UPD424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The UPD424400 is a 1,048,576 w ords by 4 bits CMOS dynam ic RAM. The fast page mode capability realizes high speed access and low power consum ption.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000AB72F 2 M-W ORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC The MC-422000AB72F is a 2,097,152 words by 72 bits dynam ic RAM m odule on which 9 pieces of 16 M DRAM: ,uPD4217800 are assem bled. This m odule provides high density and large quantities of m em ory in a small space w ith o u t utilizing the

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT iu P D 4 2 6 4 1 6 0 , 4 2 6 5 1 6 0 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE Description The ,uPD426416 0 ,4 2 6 5 1 6 0 are 4,194,304 w ords by 16 bits dynam ic CMOS RAMs. The fast page mode capability

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S17805, 4217805 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE description The UPD42S17805,4217805 are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424FG641 4M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424FG641 is a 4,194,304 words by 64 bits dynam ic RAM module on which 16 pieces of 64M DRAM : ,uPD4216405 are assembled.

Contextual Info: SEC //PD42601 Silicon File NEC Electronics Inc. Description Pin Configurations T h e /UPD42601 s ilic o n file is an e c o n o m ic a l m a ss s to r a g e d e v ic e s p e c ific a lly d e s ig n e d to re p la c e m a g ­ n e tic d is k d riv e s in s ilic o n d is k , s o lid - s ta te re c o rd in g ,

NEC 424400

Abstract: D424400GS 424400-70 NEC 424400-70 424400 60 d424400 424400-60 424400 424400-70 nec uPD424400
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ,uPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¡PD42S4400, 424400 are 1,048,576 w ords by 4 bits CMOS dynam ic RAMs. The fast page mode capability realize high speed access and low power consum ption.

20PIN

Abstract: uPD424412-10 514400
Contextual Info: - 4M St UPD424412-10 £ it £ NEC ia m m CC 0—-70 CMOS D y n a m i c RAM I 0485 76x4) 2 0 P I N A JIB TRAC max (ns) TRCY •in (ns) TCAD min (ns) TAfi min (ns) TP min (ns) TOY min (ns) TDH nin (ns) TRWC min (ns) V D D or V C C 100 190 25 20 80 190 20 250

Contextual Info: UPD4216400LE-60 IL08 * C-MOS 16M 4M WORDx4 -BIT DYNAMIC RAM -TOP VIEW- 1 V DD (+5V) I/O 1 2 GND 28 27 I/O 4 I/O 2 3 26 I/O 3 WE 4 25 CAS RAS 5 24 OE A11 6 23 A9 10 11 12 13 16 17 18 19 20 23 9 6 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 I/O I/O I/O I/O

UPD424260LE-70

Abstract: 512X512X16
Contextual Info: UPD424260LE-70 1/2 IL08 * C-MOS 4M (262,144x16) BIT DYNAMIC RAM - TOP VIEW - 1 V DD (+5V) GND 40 I/O1 IN/OUT 2 39 I/O16 IN/OUT I/O2 IN/OUT 3 38 I/O15 IN/OUT I/O3 IN/OUT 4 37 I/O14 IN/OUT I/O4 IN/OUT 5 36 I/O13 IN/OUT 6 V DD (+5V) GND 35 I/O5 IN/OUT 7

UPD424260G5-70-7JF

Abstract: O2-A2 IL16 UPD424260G5-70
Contextual Info: UPD424260G5-70-7JF 1/2 IL16 ∗∗∗∗∗ C-MOS 4M (262,144 x 16) BIT DYNAMIC RAM -TOP VIEW18 1 VDD (+5V) GND 44 43 I/O16 IN/OUT I/O1 IN/OUT 2 19 20 21 I/O2 IN/OUT 3 42 I/O15 IN/OUT I/O3 IN/OUT 4 41 I/O14 IN/OUT I/O4 IN/OUT 5 40 I/O13 IN/OUT 24 25 26 6

UPD4265

Contextual Info: SEC /¿PD4265 6 5 ,5 3 6 x 1 -BIT DYNAMIC CMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The NEC /UPD4265 is a 65,536-word by 1-bit d ynam ic CM O S Random Access M em ory RAM designed to operate from a single + 5 V p ow er supply. The

MC-421000A36B-70

Abstract: MC-421000A36FE-70 MC-421000A36F-70
Contextual Info: NEC MOS INTEGRATED CIRCUII MC-421000A 32, 421000A 36 S E R IE S 1 M-WORD BY 32-BIT, 1 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE D escrip tio n The MC-421000A32 series is a 1 048 576 words by 32 bits dynamic RAM module on which 8 pieces of 4 M DRAM : ,uPD424400 are assembled.

mc 668 L ic

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-422000AA64 2 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description Th e M C-422000AA64 is a 2,097,152 w ords by 64 bits dynam ic RAM m odule on w hich 8 pieces of 16 M DRAM: ,uPD4218160 are assembled. This m odule provides high density and large quantities of memory in a small space w ithout utilizing the surfacem ounting technology on the printed circuit board.

NEC Japan 424210-60

Abstract: NEC 424210-60 424210-60-G UPD42S4210 424210 NEC 424210
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿PD 42S4210, 424210 4 M-BiT DYNAMIC RAM 256K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The ,uPD42S4210, 424210 are 262,144 words by 16 bits CMOS dynamic RAMs with optional hyper page mode

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-42S2000LAB32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S2000LAB32S series is a 2,097,152 words by 32 bits dynamic RAM m odule (Small O utline DIMM) on which 4 pieces of 16 M DRAM: ,uPD42S17800L. are assembled.