UNR32AT Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AT Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

UNR32AT

Abstract: UNR32ATG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ATG Silicon NPN epitaxial planar type For digital circuits • Package  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption

marking KZ diode

Abstract: on semiconductor marking KZ UNR32AT
Contextual Info: Transistors with built-in Resistor UNR32AT Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption Collector-base voltage Emitter open

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AT Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AT Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ATG Silicon NPN epitaxial planar type For digital circuits • Package  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption

UNR32AT

Abstract: UNR32ATG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ATG Silicon NPN epitaxial planar type For digital circuits • Package  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption

UNR32AT

Abstract: NT 101
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AT Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ATG Silicon NPN epitaxial planar type For digital circuits • Features  Package  Suitable for high-density mounting and downsizing of the equipment

UNR32AT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AT Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

on semiconductor marking KZ

Abstract: SSSMini3-F1 transistor UNR32AT marking KZ
Contextual Info: Transistors with built-in Resistor UNR32AT Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption Collector-base voltage Emitter open

Contextual Info: Transistors with built-in Resistor UNR32AT Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption Collector-base voltage Emitter open

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UNR31AB

Abstract: matsushita pnp UNR31A1 UNR31A2 UNR31A4 UNR31AD UNR31AE UNR31AM UNR31AN UNR31AT
Contextual Info: Sheet No. 1/6 DESIGNED CHECKED CHECKED APPROVED inaiMfê/Product Specification m ^ / T y p e Number: U N R 3 Q [ Ä ] [ [ ] o o [ l ] 1 1) 1) M 1) ~fz^OA£MXK v U D y V-y yi/7^9 /Si 1icon Transistors ÍSE'J/Type ffliË/AppI icat ion ífliíl/Structure °]S£ffl/Digital Circuit

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0G3D3 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm For digital circuits 0.12+0.03 -0.02 4 2 0.10 3 0.10 1 0 to 0.02 (0.35) (0.35)

UNR31A3

Abstract: UNR32AT
Contextual Info: Transistors with built-in Resistor NP0G3D3 Silicon PNP epitaxial planar transistor Tr1 Silicon NPN epitaxial planar transistor (Tr2) Unit: mm For digital circuits 0.12+0.03 -0.02 4 0.80±0.05 1 2 3 0.10 • Two elements incorporated into one package • Suitable for high density package and downsizing of the equipment

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UNR31A3

Abstract: UNR32AT
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0G3D3 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm For digital circuits 0.12+0.03 -0.02 5 4 1 2 1.00±0.05 0 to 0.02 3 0.10 • Two elements incorporated into one package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0G3D3 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm For digital circuits 0.12+0.03 -0.02 4 0.80±0.05 1 2 0 to 0.02 3 0.10 • Two elements incorporated into one package

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

UNR31A3

Abstract: UNR32AT
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0G3D3 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d For digital circuits 0.12+0.03 -0.02 4

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the