UNR32A Search Results
UNR32A Price and Stock
Panasonic Electronic Components UNR32A100LTRANS PREBIAS NPN 50V SSSMINI3 |
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UNR32A100L | Cut Tape |
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UNR32A100L | 6,453 |
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Panasonic Electronic Components UNR32AM00LTRANS PREBIAS NPN 50V SSSMINI3 |
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UNR32AM00L | Reel |
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Panasonic Electronic Components UNR32A6G0LTRANS PREBIAS NPN 50V SSSMINI3 |
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Panasonic Electronic Components UNR32A0G0LTRANS PREBIAS NPN 50V SSSMINI3 |
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UNR32A0G0L | Reel | 10,000 |
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Panasonic Electronic Components UNR32AMG0LTRANS PREBIAS NPN 50V SSSMINI3 |
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UNR32AMG0L | Reel |
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UNR32A Datasheets (42)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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UNR32A0 |
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Composite Device - Transistors with built-in Resistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A000L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A0G0L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A1 |
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Composite Device - Transistors with built-in Resistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A100L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A1G0L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A2 |
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Composite Device - Transistors with built-in Resistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A3 |
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Composite Device - Transistors with built-in Resistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A300L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A3G0L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A4 |
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Composite Device - Transistors with built-in Resistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A400L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A4G0L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A5 |
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Composite Device - Transistors with built-in Resistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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UNR32A500L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A5G0L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A6 |
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Composite Device - Transistors with built-in Resistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A600L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A6G0L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UNR32A7 |
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Composite Device - Transistors with built-in Resistor | Original |
UNR32A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP042A1 Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features +0.03 0.12 -0.02 1 Basic Part Number 2 0.10 3 (0.35) (0.35) 1.00±0.05 UNR32A1 x 2 |
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2002/95/EC) NP042A1 UNR32A1 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ALG Silicon NPN epitaxial planar type For digital circuits • Package Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption |
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2002/95/EC) UNR32ALG | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP042A0 Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features +0.03 0.12 -0.02 1 Basic Part Number 2 0.10 3 (0.35) (0.35) 1.00±0.05 UNR32A0 x 2 |
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2002/95/EC) NP042A0 UNR32A0 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AFG Silicon NPN epitaxial planar type For digital circuits • Features M Di ain sc te on na tin nc ue e/ d Suitable for high-density mounting and downsizing of the equipment |
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2002/95/EC) UNR32AFG | |
NP042A6
Abstract: UNR32A6
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NP042A6 UNR32A6 NP042A6 UNR32A6 | |
Contextual Info: Transistors with built-in Resistor UNR32AB Silicon NPN epitaxial planar transistor Unit: mm 0.33+0.05 –0.02 For digital circuits 0.10+0.05 –0.02 1 0.23+0.05 –0.02 2 0.40 (0.40) 0.80±0.05 1.20±0.05 di p Pl lan nclu ea e se pla m d m des ne ain ain foll |
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UNR32AB | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ANG Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Suitable for high-density mounting and downsizing of the equipment |
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2002/95/EC) UNR32ANG | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AT Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02 Suitable for high-density mounting and downsizing of the equipment |
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2002/95/EC) UNR32AT | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A5G Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Suitable for high-density mounting and downsizing of the equipment |
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2002/95/EC) UNR32A5G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A3 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 0.80±0.05 5° 1 0.23+0.05 –0.02 2 0.15 min. • Suitable for high-density mounting and downsizing of the equipment |
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2002/95/EC) UNR32A3 | |
Contextual Info: Transistors with built-in Resistor UNR32AF Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02 Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption Collector-base voltage Emitter open |
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UNR32AF | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP042A2 Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features +0.03 0.12 -0.02 4 2 3 0.10 1 Basic Part Number (0.35) (0.35) 1.00±0.05 UNR32A2 x 2 |
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2002/95/EC) NP042A2 UNR32A2 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A5 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 0.80±0.05 1 0.23+0.05 –0.02 2 0.15 min. • Suitable for high-density mounting and downsizing of the equipment |
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2002/95/EC) UNR32A5 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AEG Silicon NPN epitaxial planar type For digital circuits • Features Package Suitable for high-density mounting and downsizing of the equipment |
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2002/95/EC) UNR32AEG | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9G Silicon NPN epitaxial planar type For digital circuits • Features ■ Package • Suitable for high-density mounting downsizing of the equipment • Contribute to low power consumption |
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2002/95/EC) UNR32A9G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP042A3 Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features +0.03 0.12 -0.02 4 2 3 0.10 1 Basic Part Number (0.35) (0.35) 1.00±0.05 UNR32A3 x 2 |
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2002/95/EC) NP042A3 UNR32A3 | |
Contextual Info: Transistors with built-in Resistor UNR32A5 Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 0.80±0.05 1 0.23+0.05 –0.02 2 0.15 min. • Suitable for high density package and downsizing of the equipment |
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UNR32A5 | |
Contextual Info: Transistors with built-in Resistor UNR32A3 Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 0.80±0.05 1 0.23+0.05 –0.02 2 0.15 min. • Suitable for high density package and downsizing of the equipment |
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UNR32A3 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AV Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02 Suitable for high-density mounting and downsizing of the equipment |
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2002/95/EC) UNR32AV | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP042A0 Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features +0.03 0.12 -0.02 4 2 3 0.10 1 Basic Part Number (0.35) (0.35) 1.00±0.05 UNR32A0 x 2 |
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2002/95/EC) NP042A0 UNR32A0 | |
Contextual Info: Transistors with built-in Resistor UNR32AA Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 1.20±0.05 0.80±0.05 1 0.23+0.05 |
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UNR32AA | |
Marking Symbol KF
Abstract: UNR32AL
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UNR32AL Marking Symbol KF UNR32AL | |
UNR32A7Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A7 Silicon NPN epitaxial planar type Unit: mm 0.33+0.05 –0.02 For digital circuits 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40) 0.80±0.05 |
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2002/95/EC) UNR32A7 UNR32A7 | |
UNR32AF
Abstract: UNR32AFG
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2002/95/EC) UNR32AFG UNR32AF UNR32AFG |