UNR32AF Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AFG Silicon NPN epitaxial planar type For digital circuits • Features M Di ain sc te on na tin nc ue e/ d  Suitable for high-density mounting and downsizing of the equipment

Contextual Info: Transistors with built-in Resistor UNR32AF Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption Collector-base voltage Emitter open

UNR32AF

Abstract: UNR32AFG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AFG Silicon NPN epitaxial planar type For digital circuits • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

UNR32AF

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AF Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AFG Silicon NPN epitaxial planar type For digital circuits • Features  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AF Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AF Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

UNR32AF

Abstract: UNR32AFG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AFG Silicon NPN epitaxial planar type For digital circuits • Features Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w

UNR32AF

Contextual Info: Transistors with built-in Resistor UNR32AF Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption Collector-base voltage Emitter open

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ALG Silicon NPN epitaxial planar type For digital circuits • Package  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UNR32AF

Abstract: UNR32AL
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AL Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AL Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AL Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

Contextual Info: Transistors with built-in Resistor UNR32AL Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption Collector-base voltage Emitter open

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AL Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.33+0.05 –0.02  Suitable for high-density mounting and downsizing of the equipment

UNR32ALG

Abstract: UNR32AF UNR32AL
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ALG Silicon NPN epitaxial planar type For digital circuits • Package  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ALG Silicon NPN epitaxial planar type For digital circuits • Features  Package  Suitable for high-density mounting and downsizing of the equipment

UNR32AF

Abstract: UNR32AL UNR32ALG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ALG Silicon NPN epitaxial planar type For digital circuits • Package  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption