UNR32A3 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A3 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 0.80±0.05 5° 1 0.23+0.05 –0.02 2 0.15 min. • Suitable for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP042A3 Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features +0.03 0.12 -0.02 4 2 3 0.10 1  Basic Part Number (0.35) (0.35) 1.00±0.05  UNR32A3 x 2

Contextual Info: Transistors with built-in Resistor UNR32A3 Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 0.80±0.05 1 0.23+0.05 –0.02 2 0.15 min. • Suitable for high density package and downsizing of the equipment

NP042A3

Abstract: UNR32A3
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP042A3 Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features +0.03 0.12 -0.02 4 2 1.00±0.05  UNR32A3 x 2 0.10 1.00±0.04 3 (0.35) (0.35) 0.10

UNR32A3G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A3G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A3 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 0.80±0.05 1 0.23+0.05 –0.02 2 0.15 min. • Suitable for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A3G Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Suitable for high-density mounting and downsizing of the equipment

Contextual Info: Composite Transistors NP042A3 Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features +0.03 0.12 -0.02 4 2 3 0.10 1  Basic Part Number 0.35 (0.35) 1.00±0.05  UNR32A3 x 2 +0.03 0.37 -0.02 (0.10) Display at No.1 lead  Absolute Maximum Ratings Ta = 25°C

UNR32A3

Contextual Info: Transistors with built-in Resistor UNR32A3 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 0.80±0.05 1 0.23+0.05 –0.02 2 0.15 min. • Suitable for high-density mounting and downsizing of the equipment

UNR32A3G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A3G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Suitable for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP042A3 Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features +0.03 0.12 -0.02 1  Basic Part Number 2 0.10 3 (0.35) (0.35) 1.00±0.05  UNR32A3 x 2

UNR32A3G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A3G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: FN • Pin Name 1: Base 2: Emitter

UNR32A3

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A3 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A3 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 0.80±0.05 1 0.23+0.05 –0.02 2 0.15 min. • Suitable for high-density mounting and downsizing of the equipment

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0G3A3 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For digital circuits • Features ■ Package • SSSMini package, reduction of the mounting area and assembly

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP04390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For switching circuits For digital circuits +0.03 0.12 -0.02 4 1 2 3 0.10

UNR31A3

Abstract: UNR32A3
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0G3A3 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For digital circuits • Features ue pl d in an c

UNR31AB

Abstract: matsushita pnp UNR31A1 UNR31A2 UNR31A4 UNR31AD UNR31AE UNR31AM UNR31AN UNR31AT
Contextual Info: Sheet No. 1/6 DESIGNED CHECKED CHECKED APPROVED inaiMfê/Product Specification m ^ / T y p e Number: U N R 3 Q [ Ä ] [ [ ] o o [ l ] 1 1) 1) M 1) ~fz^OA£MXK v U D y V-y yi/7^9 /Si 1icon Transistors ÍSE'J/Type ffliË/AppI icat ion ífliíl/Structure °]S£ffl/Digital Circuit

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

NP043A3

Abstract: UNR31A3 UNR32A3
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043A3 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 4 2 0.10 3 (0.35) (0.35) 0.10 1 1.00±0.05

NP04390

Abstract: UNR31A4 UNR32A3
Contextual Info: Composite Transistors NP04390 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm For switching circuits For digital circuits +0.03 0.12 -0.02 4 1 2 3 0.10  Two elements incorporated into one package (Transistors with built-in resistor)