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    Panasonic Electronic Components UNR221M00L

    TRANS PREBIAS NPN 50V 0.1A MINI3
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    DigiKey UNR221M00L Cut Tape 894 1
    • 1 $0.2
    • 10 $0.125
    • 100 $0.2
    • 1000 $0.07034
    • 10000 $0.07034
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    UNR221M00L Reel
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    UNR221M Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UNR221M Panasonic Silicon NPN Epitaxial Planar Transistor Original PDF
    UNR221M00L Panasonic Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW MINI3 Original PDF

    UNR221M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UN221M

    Abstract: UNR221M XN0121M XN121M
    Text: Composite Transistors XN0121M XN121M NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR221M(UN221M) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN0121M XN121M) UNR221M UN221M) UN221M XN0121M XN121M

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN0121M XN121M Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 3 1 0.30+0.10 –0.05 (0.65) • Basic Part Number 2 1.1+0.2 –0.1 ea s ht e v tp is :// it pa fo na llo so win


    Original     		PDF XN0121M XN121M)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0421M Silicon NPN epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XP0421M UNR221M UN221M)

    UP0431MG

    Abstract: UNR211M UNR221M
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431MG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (transistors with built-in resistor)


    Original     		PDF 2002/95/EC) UP0431MG UNR211M UNR221M UP0431MG UNR211M UNR221M

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou


    Original     		PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    UNR221M

    Abstract: UP0121M
    Text: Composite Transistors UP0121M Silicon NPN epitaxial planar type For switching circuits For digital circuits Unit: mm +0.05 0.20 –0.02 0.30 1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 • Basic Part Number 5° Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF UP0121M UNR221M UNR221M UP0121M

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0421M Silicon NPN epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XP0421M UNR221M UN221M)

    Panasonic Main Unit VB -5150

    Abstract: UNR221M UP0121M
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0121M Silicon NPN epitaxial planar type For switching circuits For digital circuits Unit: mm +0.05 0.20 –0.02 (0.30) 2 3 (0.50) (0.50) 1.00±0.05 (0.20) (0.20) ue pl d in


    Original     		PDF 2002/95/EC) UP0121M Panasonic Main Unit VB -5150 UNR221M UP0121M

    UNR221M

    Abstract: UP0121M
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0121M Silicon NPN epitaxial planar type For switching circuits For digital circuits Unit: mm +0.05 0.20 –0.02 (0.30) 2 3 (0.50) (0.50) 1.00±0.05 (0.20) (0.20) ue pl d in


    Original     		PDF 2002/95/EC) UP0121M UNR221M UP0121M

    UNR221M

    Abstract: XP0121M
    Text: Composite Transistors XP0121M Silicon NPN epitaxial planar type 0.425 For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


    Original     		PDF XP0121M UNR221M XP0121M

    221L

    Abstract: UN22XX UNR2218 17 25 04 UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215
    Text: Transistors with built-in Resistor UNR22XX Series UN22XX Series Silicon NPN epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Costs can be reduced through downsizing of the equipment and


    Original     		PDF UNR22XX UN22XX 221L UNR2218 17 25 04 UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431MG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (transistors with built-in resistor)


    Original     		PDF 2002/95/EC) UP0431MG UNR211M UNR221M

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) UNR221x UN221x

    UNR221M

    Abstract: XP0421M
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0421M Silicon NPN epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


    Original     		PDF 2002/95/EC) XP0421M UNR221M UNR221M XP0421M

    221D

    Abstract: 221L UNR2213 UNR2210 UNR2211 UNR2212 UNR2214 UNR2215 UNR2216 UNR2217
    Text: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor


    Original     		PDF E/221F/221K/221L/221M/221N/221T/221V/221Z UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 10nductor 221D 221L UNR2213 UNR2210 UNR2211 UNR2212 UNR2214 UNR2215 UNR2216 UNR2217

    UN221M

    Abstract: UNR221M XN0121M XN121M
    Text: Composite Transistors XN0121M XN121M Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 2 1 (0.65) 0.30+0.10 –0.05 1.1+0.2 –0.1 Parameter Collector-base voltage (Emitter open)


    Original     		PDF XN0121M XN121M) UN221M UNR221M XN0121M XN121M

    UN221M

    Abstract: UNR221M XP0421M
    Text: Composite Transistors XP0421M Silicon NPN epitaxial planar type 0.2±0.05 6 Unit: mm 0.425 For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


    Original     		PDF XP0421M UN221M UNR221M XP0421M