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    Panasonic Electronic Components UNR221000L

    100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR (Also Known As: UN2210-TX)
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    Quest Components UNR221000L 2,568
    • 1 $0.1372
    • 10 $0.1372
    • 100 $0.0858
    • 1000 $0.0617
    • 10000 $0.0617
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    VENKEL LTD HPTF1210-UN-2210CT

    High Power Thin Film CR;1210;1/3W;�10PPM;221R;�0.25%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. HPTF1210-UN-2210CT Reel 5 Weeks, 5 Days 5,000
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    VENKEL LTD HPTF2010-UN-2210AT

    High Power Thin Film CR;2010;1/3W;�10PPM;221R;�0.05%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. HPTF2010-UN-2210AT Reel 5 Weeks, 5 Days 4,000
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    VENKEL LTD HPTF2010-UN-2210FT

    High Power Thin Film CR;2010;1/3W;�10PPM;221R;�1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. HPTF2010-UN-2210FT Reel 5 Weeks, 5 Days 4,000
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    VENKEL LTD HPTF1210-UN-2210BT

    High Power Thin Film CR;1210;1/3W;�10PPM;221R;�0.1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. HPTF1210-UN-2210BT Reel 5 Weeks, 5 Days 5,000
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    UN2210 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UN2210 Panasonic TRANS DIGITAL BJT NPN 50V 100MA 3MINI3-G1 Original PDF
    UN2210 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    UN2210 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    UN2210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    UN2210-Q Panasonic SMD, Silicon NPN Transistor Original PDF

    UN2210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    transistors c 2216

    Abstract: UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215
    Text: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05


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    PDF E/221F/221K/221L/221M/221N/221T/221V/221Z UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 transistors c 2216 UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04210 (XN4210) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des


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    PDF 2002/95/EC) XN04210 XN4210)

    UN2210

    Abstract: UNR2210 XP01210 XP1210
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01210 (XP1210) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


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    PDF 2002/95/EC) XP01210 XP1210) UN2210 UNR2210 XP01210 XP1210

    UN2210

    Abstract: UNR2210 XP04210 XP4210
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04210 (XP4210) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


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    PDF 2002/95/EC) XP04210 XP4210) UN2210 UNR2210 XP04210 XP4210

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04210 (XN4210) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number


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    PDF 2002/95/EC) XN04210 XN4210) UNR2210 UN2210)

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    UN2210

    Abstract: UNR2210 XP01210 XP1210
    Text: Composite Transistors XP01210 XP1210 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)


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    PDF XP01210 XP1210) UN2210 UNR2210 XP01210 XP1210

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou


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    PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


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    PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


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    PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01210 (XP1210) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


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    PDF 2002/95/EC) XP01210 XP1210) UNR2210 UN2210)

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


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    PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    UN2210

    Abstract: UNR2210 XN04210 XN4210
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04210 (XN4210) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05


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    PDF 2002/95/EC) XN04210 XN4210) UN2210 UNR2210 XN04210 XN4210

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    UN2210

    Abstract: UNR2210 XP02210 XP2210
    Text: Composite Transistors XP02210 XP2210 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Base-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


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    PDF XP02210 XP2210) UN2210 UNR2210 XP02210 XP2210

    UN2210

    Abstract: UNR2210 XP04210 XP4210
    Text: Composite Transistors XP04210 XP4210 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


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    PDF XP04210 XP4210) UN2210 UNR2210 XP04210 XP4210

    UN2224

    Abstract: UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 UN2121 UN2122
    Text: - 342 - MAÆfê M s « ffl & VcBO V UN2112 UN2113 UN2114 ÜN2115 UN2116 UN2117 UN2118 UN 2119 UN2121 UN2122 UN2123 UN2124 UN2210 UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 UN2219 UN2221 UN2222 UN2223 UN2224 UN4110 UN4111 UN4112 UN4113 UN4114


    OCR Scan
    PDF UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 SC-59A) UN2221 UN2122 UN2224 UN2121 UN2122

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan
    PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    N2114

    Abstract: marking som 6pin N2213 AE 3PIN ZD43
    Text: S -5 b 7 § ^ 6 ÎS Ÿ / > i / z —V S Mini Type (6-pin) Package Outline * Transistors 0.425 mn m ID tO 1 O un CD 2 O L— Œ 3 S S ^ S ! ( 6 Ä i- ) A - y ^ - v li. S t# W S Í- M ( 3 ^ ) ¿ |5 li;/N " 7 X T 'h 7 > v 'X Í2 • f t ,1.25±0 1 • 4 ' ¿ " * f J& U / c K r f f i H ^


    OCR Scan
    PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    UN7000

    Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
    Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )


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    PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211