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    ROHM Semiconductor UMZ1NTR

    TRANS NPN/PNP 50V 150MA UMT6
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    TRANS NPN/PNP 50V 0.2A SOT363
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    onsemi NSVUMZ1NT1G

    TRANS NPN/PNP 50V 200MA SOT-363
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    TRANS NPN/PNP 50V 0.2A SC88/SC70
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    ROHM Semiconductor UMZ1NFHATR

    TRANS NPN/PNP 50V 150MA UMT6
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    UMZ1N Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UMZ1N ROHM General purpose transistor (dual transistor) Original PDF
    UMZ1N ROHM General purpose transistor (dual transistors) Original PDF
    UMZ1NFHATR ROHM Semiconductor UMZ1N SERIES 50 V 150 MA SMT NPN Original PDF
    UMZ1NT1 On Semiconductor Complementary Dual General Purpose Amplifier Transistor Original PDF
    UMZ1NT1 On Semiconductor Complementary Dual General Purpose Transistors Original PDF
    UMZ1NT1G On Semiconductor TRANS GP BJT NPN/PNP 50V 0.2A 6SC-88 T/R Original PDF
    UMZ1NT1G On Semiconductor Complementary Dual General Purpose Transistors; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    UMZ1N-TP Micro Commercial Interface Original PDF
    UMZ1NTR ROHM TRANS NPN/PNP 50V 150MA SOT-363 Original PDF

    UMZ1N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor dual transistors EMZ1 / UMZ1N / IMZ1A zExternal dimensions (Unit : mm) zFeatures 1) Both a 2SA1037AK chip and 2SC241ZK chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3


    Original
    2SA1037AK 2SC241ZK PDF

    Untitled

    Abstract: No abstract text available
    Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A


    Original
    200X400 PDF

    Untitled

    Abstract: No abstract text available
    Text: UMZ1N 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management Dual Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z 2SA1037AK and 2SC2412K are housed independently in a package.


    Original
    2SA1037AK 2SC2412K OT-363 026TYP 65TYP) 021REF 01-June-2005 PDF

    IMZ1A rohm

    Abstract: 2SA1037AK 2SC241ZK T108 EMZ1 "dual TRANSISTORs" pnp npn
    Text: EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor dual transistors EMZ1 / UMZ1N / IMZ1A zExternal dimensions (Unit : mm) zFeatures 1) Both a 2SA1037AK chip and 2SC241ZK chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3


    Original
    2SA1037AK 2SC241ZK IMZ1A rohm T108 EMZ1 "dual TRANSISTORs" pnp npn PDF

    UMZ1N

    Abstract: "dual TRANSISTORs" 2SA1037AK 2SC2412K
    Text: UMZ1N 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management Dual Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES A E L 2SA1037AK and 2SC2412K are housed independently in a package.


    Original
    OT-363 2SA1037AK 2SC2412K 28-Oct-2009 UMZ1N "dual TRANSISTORs" PDF

    Untitled

    Abstract: No abstract text available
    Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A


    Original
    200X400 PDF

    PNP,494

    Abstract: No abstract text available
    Text: UMZ1N/IMZ1A h 7 > v 7s $ / I ransistors 7 U M Z 1 N . _ /f V l / - T 7 K ^ — J i' K x / S ' < i 7s Isolated Mini-Mold Device IP flZ 1 A — / Gener al Small Signal Amp. • i't-ff^ iiE I/'D im e n s io n s U n it: mm 1) UMT (SC-70), SM T (SC-59) ¿ Is ] —


    OCR Scan
    SC-70) SC-59) PNP,494 PDF

    SMD310

    Abstract: No abstract text available
    Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200~400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A


    Original
    PDF

    common emitter amplifier

    Abstract: common collector amplifier circuit designing general purpose complementary transistors high voltage pnp npn transistors,pnp transistors 187 transistor npn 208 SOT-363 common base amplifier circuit common emitter amplifier circuit designing NPN/TRANSISTOR 187
    Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features •ăHigh Voltage and High Current: VCEO = 50 V, IC = 200 mA •ăHigh hFE: hFE = 200X400 •ăMoisture Sensitivity Level: 1 •ăESD Rating - Human Body Model: 3A


    Original
    200X400 common emitter amplifier common collector amplifier circuit designing general purpose complementary transistors high voltage pnp npn transistors,pnp transistors 187 transistor npn 208 SOT-363 common base amplifier circuit common emitter amplifier circuit designing NPN/TRANSISTOR 187 PDF

    DUAL TRANSISTOR

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.


    Original
    OT-363 QW-R218-024 DUAL TRANSISTOR PDF

    SOT-363 marking z1

    Abstract: marking Z1 z1 sot363
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMZ1N Features x x x 2SA1037AK and 2SC2412K are housed independently in a package. Mounting cost and area can be cut in half.


    Original
    2SA1037AK 2SC2412K OT-363, OT-363 SOT-363 marking z1 marking Z1 z1 sot363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components UMZ1N Features • x x x • • • Halogen free available upon request by adding suffix "-HF" 2SA1037AK and 2SC2412K are housed independently in a package.


    Original
    2SA1037AK 2SC2412K OT-363 OT-363, PDF

    "dual TRANSISTORs" pnp npn

    Abstract: BC847CPDW1T1 dual pnp BC858CDW1T1
    Text: Bipolar Transistors General−Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1 MBT6429DW1T1 UMZ1NT1 BC848CDW1T1


    Original
    SC-88, OT-363 419B-02 OT-563 63A-01 SO-16 751B-05 "dual TRANSISTORs" pnp npn BC847CPDW1T1 dual pnp BC858CDW1T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Power management Dual-transistors UMZ1N TRANSISTOR SOT-363 DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA1037AK and 2SC2412K are housed independently in a package. z Transistor elements independent, eliminating interference.


    Original
    OT-363 OT-363 2SA1037AK 2SC2412K Temperature25â -50mA 100MHz PDF

    transistor

    Abstract: Transistors General 2SC241ZK transistors transistor 571 Silicon General NPN/PNP transistor CHIP TRANSISTOR pnp and npn pdf of transistors npn pnp
    Text: Transistors General purpose transistor dual transistors UMZ1N / IMZ1A FFeatures 1) Both a 2SA1037AK chip and 2SC241ZK chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.


    Original
    2SA1037AK 2SC241ZK 96-525-AC22) transistor Transistors General transistors transistor 571 Silicon General NPN/PNP transistor CHIP TRANSISTOR pnp and npn pdf of transistors npn pnp PDF

    UMZ1N

    Abstract: 7915 BJT BF 167
    Text: SPICE PARAMETER UMZ1N * UMZ1N_NPN BJT model * Date: 2006/11/30 .MODEL UMZ1N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897


    Original
    000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 UMZ1N 7915 BJT BF 167 PDF

    Untitled

    Abstract: No abstract text available
    Text: UMZ1N UMZ1N SOT-363 Multi-Chip TRANSISTOR NPN/PNP FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: 150/-150 mA Collector-base voltage 60/-60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


    Original
    -50mA, 100MHz PDF

    419B-02

    Abstract: SMD310
    Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A


    Original
    200X400 SC-88 419B-02 SMD310 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor Isolated Dual Transistors UMZ1N/ IMZ1A •F e a tu re s 1) B o th • E x te r n a l dim ensions (Units: mm ) 2SA1037AK c h ip and 2 S C 2 4 1 Z K chip in U M T a n d S M T IMZ1A UMZ1N 2.0 ± 0.2 2) 0 .9 ± 0 .1 1 .9 ± 0 .2


    OCR Scan
    2SA1037AK 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c PDF

    Untitled

    Abstract: No abstract text available
    Text: UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A


    Original
    200X400 SC-88 PDF

    SOT-363 marking z1

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMZ1N Features x x x • • • 2SA1037AK and 2SC2412K are housed independently in a package. Mounting cost and area can be cut in half.


    Original
    2SA1037AK 2SC2412K OT-363, OT-363 SOT-363 marking z1 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMZ1N SOT-363 Multi-Chip TRANSISTOR NPN/PNP FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current 150/-150 mA ICM: Collector-base voltage 60/-60 V


    Original
    OT-363 OT-363 -50mA, 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A


    Original
    200X400 PDF

    SMD310

    Abstract: SC-88 package
    Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A


    Original
    200X400 SC-88 SMD310 SC-88 package PDF