UJ 79A Search Results

MB81C79A

Abstract: MB81C79A-35 mb81c79 MB81C79A-45 N0-22 MB81C79A-45-W 3741B
Contextual Info: FUJITSU MICROELECTRONICS 47E D 3 7 4 T ? h 2 1 • T Ì 4 6 - 2 3 April 1990 Edition 3.0 FUjflSU DATA SHEET M B 8 1 C 79A -35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79A is a 8,192 words x 9 bits static random access memory

Contextual Info: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT27GA90K

Abstract: MIC4452
Contextual Info: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT10035LLL

Abstract: APT27GA90BD15 MIC4452 600V180
Contextual Info: APT27GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

full wave BRIDGE RECTIFIER

Contextual Info: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT27GA90BD15

Abstract: APT27GA90SD15 MIC4452 SD15
Contextual Info: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT10035LLL

Abstract: APT27GA90BD15 MIC4452
Contextual Info: APT27GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

bzx79 2v7

Abstract: bzx79 6v2 BZX Philips Voltage Regulator Diodes Philips Semiconductors Voltage Regulator Diodes 1 bzx79 philips bzx c12 philips BZX "Voltage Regulator Diodes" BZX79
Contextual Info: Philips Semiconductors Product specification Voltage regulator diodes BZX79 series FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 DO-35 packages. The diodes are available in the normalized E24

IGBT 900v

Abstract: IGBT microsemi APT27GA90K gate DRIVER IGBT MIC4452
Contextual Info: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT10035LLL

Abstract: APT27GA90BD15 MIC4452 BY 126 DIODE DYNAMIC RESISTANCE 14A 600V TO247 IGBT 14A144
Contextual Info: APT27GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

MB81C79A-35

Abstract: mb81c79a-45 mb81c79
Contextual Info: April 1990 Editbn 3.0 FUJITSU DATA SHEET M B 8 1C79A-35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu M B81C79A Is a 8,192 w ords x 9 bits static random access memory fabricated with a CM OS process. The m emory uses asynchronous circuitry and may be

Contextual Info: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low

BL-4C

Contextual Info: D R A W I N G M A D E IN T H I R D A N G L E P R O J E C T I O N T H JS DRAW ING I S U N P U B L IS H E D . R E L E A SE D FO R P U B L IC A T IO N COPYRIGHT 1 3 BY A M P INCORPORATED, HARR ISSU R G , P A . A L L JNTERNAT JONAL R IG H TS R ESERV ED. A M P PRODUCTS MA Y B E COVERED SV J. 5. AND FO R EIG N PA TEN TS AMD/OR PATENTS PEN D IN G .

MOSFET IRF 630 Datasheet

Abstract: irfr1018epbf transistor IRF 630 AN-994
Contextual Info: PD - 97129 IRFR1018EPbF IRFU1018EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G S Benefits l Improved Gate, Avalanche and Dynamic

Contextual Info: PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ.

IRF1018E

Abstract: IRF1018EPbF transistor IRF 630 AN-994
Contextual Info: PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ.

Contextual Info: PD - 97129A IRFR1018EPbF IRFU1018EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G S Benefits l Improved Gate, Avalanche and Dynamic

AN-994

Contextual Info: PD - 97129A IRFR1018EPbF IRFU1018EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G S Benefits l Improved Gate, Avalanche and Dynamic

AN-994

Abstract: AUIRFR1018E P-Channel MOSFET 600v
Contextual Info: PD - 97685 AUTOMOTIVE GRADE AUIRFR1018E HEXFET Power MOSFET Features ● ● ● ● ● ● ● VDSS RDS on typ. max. ID (Silicon Limited) ID (Package Limited) D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching

AUIRF

Abstract: IRF1018ES AUIRF1018E
Contextual Info: PD - 97711 AUTOMOTIVE GRADE AUIRF1018ES Features ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Contextual Info: PD - 97711 AUTOMOTIVE GRADE AUIRF1018ES Features ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Contextual Info: PD - 97685 AUTOMOTIVE GRADE AUIRFR1018E HEXFET Power MOSFET Features ● ● ● ● ● ● ● VDSS RDS on typ. max. ID (Silicon Limited) ID (Package Limited) D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching

Contextual Info: F eatu re s Se rie s 388 Potentiometer 1/2 in. sq., .5 Walt • S m a ll size - 1/2 in. square S e rie s 3 8 9 Potentiometer • Stackable - up to 8 m odules 1/2 in. sq., 1 Watt • Sw itches - rotary, p u sh -p u ll, push-m om entary, m ulti position and schadow .