UGF2016F Search Results
UGF2016F Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| UGF2016F |
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FET Transistor, 16W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs | Original |
UGF2016F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
cree rf
Abstract: UGF2016 UGF2016F cree MOS F1840
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UGF2016 30dBc UGF2016 cree rf UGF2016F cree MOS F1840 | |
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Contextual Info: UGF2016 16W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 16W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation. |
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UGF2016 30dBc UGF2016F UGF2016 150mA, UGF2016F |