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    ZMDI U632H64BD1K25

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    ZMDI U632H64BDK45

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    Quest Components U632H64BDK45 67
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    Zentrum Mikroelektronik Dresden Ag U632H64BSC25G1

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    Vyrian U632H64BSC25G1 1,633
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    U632H64 Datasheets (78)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    U632H64 Unknown PowerStore 8K x 8 nvSRAM Original PDF
    U632H64 Simtek PowerStore 8K x 8 nvSRAM Original PDF
    U632H64 ZMD PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1C25 ZMD PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1C25 ZMD America PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1C35 ZMD PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1C35 ZMD America PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1C45 ZMD PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1C45 ZMD America PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1K25 ZMD PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1K25 ZMD America PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1K35 ZMD PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1K35 ZMD America PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1K45 ZMD PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BD1K45 ZMD America PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BDC25 ZMD PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BDC25 ZMD America PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BDC35 ZMD PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BDC35 ZMD America PowerStore 8K x 8 nvSRAM Original PDF
    U632H64BDC45 ZMD PowerStore 8K x 8 nvSRAM Original PDF

    U632H64 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: U632H64 PowerStore 8 K x 8 n v S RA M Features □ H igh-perform ance C M O S non­ volatile static RAM 8192 x 8 bits □ 25, 35 and 45 ns Access Tim es □ 12, 20 and 25 ns O utput Enable Access Tim es □ lc c = 15 m A at 200 ns Cycle Time □ A utom atic STO R E to EEPROM


    OCR Scan     		U632H64 PDF

    Untitled

    Abstract: No abstract text available
    Text: U632H64 PowerStore 8K x 8 nvSRAM Features Description S High-performance CMOS non- The U632H64 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original     		U632H64 U632H64 D-01109 D-01101 PDIP28 PDF

    all stk ic diagram

    Abstract: ML0047 free stk ic PDIP28 U632H64 Stk Ic Data Software
    Text: U632H64 PowerStore 8K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 8192 x 8 bits ‡ 25 ns Access Time ‡ 12 ns Output Enable Access Time ‡ ICC = 15 mA at 200 ns Cycle Time ‡ Automatic STORE to EEPROM


    Original     		U632H64 PDIP28 all stk ic diagram ML0047 free stk ic PDIP28 U632H64 Stk Ic Data Software PDF

    Untitled

    Abstract: No abstract text available
    Text: U632H64 PowerStore 8K x 8 nvSRAM Features Description F High-performance CMOS non- The U632H64 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original     		U632H64 U632H64 D-01109 D-01101 PDF

    PDIP28

    Abstract: U632H64 ZMD AG
    Text: U632H64 PowerStore 8K x 8 nvSRAM Features Description ! High-performance CMOS non- The U632H64 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original     		U632H64 U632H64 D-01109 D-01101 PDIP28 ZMD AG PDF

    Untitled

    Abstract: No abstract text available
    Text: U632H64 PowerStore 8K x 8 nvSRAM Features Description S High-performance CMOS non- The U632H64 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original     		U632H64 U632H64 D-01109 D-01101 PDF

    Untitled

    Abstract: No abstract text available
    Text: U632H64 PowerStore 8K x 8 nvSRAM Features Description ! High-performance CMOS non- The U632H64 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original     		U632H64 U632H64 D-01109 D-01101 PDF

    Untitled

    Abstract: No abstract text available
    Text: U632H64 PowerStore 8K x 8 nvSRAM Features Description F High-performance CMOS non- The U632H64 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original     		U632H64 U632H64 D-01109 D-01101 PDF

    Untitled

    Abstract: No abstract text available
    Text: U632H64 PowerStore 8K x 8 nvSRAM Features Description F High-performance CMOS non- The U632H64 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original     		U632H64 U632H64 D-01109 D-01101 PDF

    all stk ic diagram

    Abstract: free stk ic Stk Ic Data Software ic stk 015 free pdf download stk ic PDIP28 U632H64
    Text: U632H64 PowerStore 8K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 8192 x 8 bits ‡ 25 ns Access Time ‡ 12 ns Output Enable Access Time ‡ ICC = 15 mA at 200 ns Cycle Time ‡ Automatic STORE to EEPROM on Power Down using external


    Original     		U632H64 M3015 PDIP28 all stk ic diagram free stk ic Stk Ic Data Software ic stk 015 free pdf download stk ic PDIP28 U632H64 PDF

    PDIP28

    Abstract: U632H64
    Text: U632H64 PowerStore 8K x 8 nvSRAM F Packages: PDIP28 300 mil Features F F F F F F F F F F F F F F F F High-performance CMOS nonvolatile static RAM 8192 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time


    Original     		U632H64 PDIP28 D-01109 D-01101 PDIP28 U632H64 PDF

    PDIP28

    Abstract: U632H64
    Text: U632H64 PowerStore 8K x 8 nvSRAM F Packages: PDIP28 300 mil Features F F F F F F F F F F F F F F F F High-performance CMOS nonvolatile static RAM 8192 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time


    Original     		U632H64 PDIP28 D-01109 D-01101 PDIP28 U632H64 PDF

    Untitled

    Abstract: No abstract text available
    Text: U632H64 PowerStore 8K x 8 nvSRAM Features Description F High-performance CMOS non- The U632H64 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original     		U632H64 U632H64 D-01109 D-01101 PDF

    Untitled

    Abstract: No abstract text available
    Text: U632H64 PowerStore 8K x 8 nvSRAM Features Description F High-performance CMOS non- The U632H64 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original     		U632H64 U632H64 D-01109 D-01101 PDF

    winbond 25080

    Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
    Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010


    Original     		2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB PDF

    atmel 93c66

    Abstract: PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A 556RT5 intel 8755 eprom 2716 537RU17
    Text: Универсал ьны й програм матор Sterh ST­011 Производст во: Россия. Цен а: 17500 руб. с НД С. ST­011 имеет всего одну универсальную DIP­42 панель для программирования


    Original     		ST011 DIP42 DIP42, RS232 155RE3 556RT4 556RT4A 556RT5 atmel 93c66 PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A intel 8755 eprom 2716 537RU17 PDF

    PT001

    Abstract: 32KX8 U630H16 U63716 U637H256 U635H256 U637256 U631H256 U632H16 U632H64
    Text: Simtek Corporation Product Discontinuance Home page: http://www.simtek.com E-mail: information@simtek.com 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA 719-531-9444 fax 719-531-9481 PCN # 10057 02 PCN Status PCN Date October 04, 2006 PCN Type


    Original     		U63xxx UL63xxx U630H16 U632H16 U632H64 U631H256 32KX8 U634H256 U635H256 PT001 U63716 U637H256 U637256 PDF

    STK12C68

    Abstract: U632H64
    Text: Simtek Corporation Product Discontinuance Home page: http://www.simtek.com E-mail: information@simtek.com 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA 719-531-9444 fax 719-531-9481 PCN # 10051 01 PCN Date October 04, 2006 PCN Title DISCONTINUANCE OF


    Original     		U632H64 28-pin U632H64D1 U632H64S U632H64S2 STK12C68 PDF

    NVSRAM

    Abstract: PDIP32 U632H64 U634H256
    Text: Product Summary nvSRAM nvSRAM: SRAM and EEPROM within a single Chip Author: Dr. Stefan Günther Dr. Steffen Buschbeck Heiko Roeper Powerful processor systems which place high demands on reliability require optimum data storage systems. The nvSRAM non-volatile Static Random Access Memory now available


    Original     		PDF

    STK12C68

    Abstract: U632H16
    Text: Simtek Corporation Product Discontinuance Home page: http://www.simtek.com E-mail: information@simtek.com 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA 719-531-9444 fax 719-531-9481 PCN # 10050 01 PCN Status PCN Date October 04, 2006 PCN Type


    Original     		U632H16 28-pin U632H16D U632H16S U632H64SC/K25G1, U632H16SC/K25G1 STK12C68 PDF