U C TRANSISTOR Search Results

tda120XX

Abstract: sdc 7500 pwm control PHILIPS UOC tv kit service code with data TDA12000H1 tda 8823 equivalent tda 8823 samsung colour tv kit circuit diagram schematic diagram TCON lcd samsung sony x35 lcd smd transistor marking HT1
Contextual Info: N U N U N U N U N U C C C C C O O O O O TR O TR O TR O TR LL LL LL LL ED ED ED ED C PY PY PY P O O O O C C C U U U N N O O O C C C Product data sheet N N N Rev. 3.6 — 26 April 2006 O TR N N N N N Versatile signal processor for low- and mid-range TV applications

2SC4112

Abstract: 2018a 2SA1581
Contextual Info: 2SC4112 N P N /W Epitaxial Plana» S ilico n Transistors jo’ ba S w itc h in g A pp lication s 2SA1581 w ith Bias Resistance lEiaa A pplications . Switching c i r c u i t , in v e rte r c i r c u i t , in te rfa c e c i r c u i t , d riv e r c ir c u it

FZT951

Abstract: FZT953 NS BR 1010
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS_ FZT951 FZT953 PROVISIONAL DATA FEATURES * 5 A C O N T IN U O U S C O LL EC T O R C U R R E N T * U P T O 15A P E A K C O LL E C T O R C U R R E N T * V E R Y L O W S A T U R A T IO N V O L T A G E S

npn transistors,pnp transistors

Abstract: J.BC211 BC211 transistor amplifier VHF/UHF 2N918 J 2N918
Contextual Info: A C T IV E C O M P O N E N T S FOR H Y B R ID C IR C U IT S C O M P O S A N T S A C T IF S P O U R C IR C U IT S H Y B R ID E S Silicon NPN transistors V H F-U H F amplification and oscillation chip Transistors N P N silicium, amplification et oscillation V H F -U H F (pastille)

gt73

Abstract: LS T73
Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT720 ISSUE 1 - SEPTEMBER 1998_ FEATU RES * 500mW POWER DISSIPATION * * * * 1A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 1A (p u lsed )

2SB1450

Contextual Info: SAfiYO Power Transistor S u r f a c e M o u n t P a c k a g e S M P S u r f a c e M o u n t Po w er In recent y e a r s s u r f a c e mou nt s e m i c o n d u c t o r products have found wide application from small-signal co nsumer equipment to h i g h - p o w e r industr ia l equipment.

Contextual Info: KSC1730 NPN EPITAXIAL SILICON TRANSISTOR TV VHF, UHF TUNER OSCILLATOR • H igh C u rre n t G a in B a n d w id th P ro d u c t fj= 1 1 0 0 0 M H z • O u tp u t C a p a c ita n c e C ob=1 -5pF M ax ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol

kta1013

Abstract: TIC 160 VCEO160V
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTC 2383 U nit in m m ) . • Color T V jV ERT. D e f le c tio n O utput. ■ Color T V C l a s s B S o u n d O utput. ( FEATURES ) • High V o lta g e ! V ceo^ ^ O V • L a r g e C o n tin u o u s C o l l e c t o r C u r r e n t C a pability.

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 1147 A ISSUE 1 - JANUARY 1997_*" FEATURES * V c e o = -12V * 4 A m p C o n tin u o u s C u rre n t * 2 0 A m p p u ls e C u rre n t * L o w S a tu ra tio n V o lta g e

CERAMIC FLATPACK

Abstract: BA 4915 DIODE S4 53 ceramic DIL 14 pin transistor mj 4035 BAT22 BAT22J BAT24H BAT26 BAT28H
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Pin Configuration n-p-n C p-n-p B C IU J ’m□ ‘Ù C E m u u E u B u: C CL □ B O T ba 1U E □ _□ _ □ O U E B B Û T m□ □ LJ D 14 Lead DIL 4915 N-channel o2 s2 f i f i

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 IS S U E 1 - S E P T E M B E R FEATU RES 500mW POWER DISSIPATION * * * * lc CO N T 1A 2 A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 2 A (p u lsed )

TLP331

Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP331,332 TLP331 U nit in mm OFFICE M A C H IN E H O U S E H O LD USE E Q U IP M E N T P R O G R A M M A B L E C O NTROLLERS A C /D C -IN P U T M O D U L E T E L E C O M M U N IC A T IO N The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide

mj3001

Contextual Info: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u

2sc3203

Abstract: 2sa1271
Contextual Info: 2SA127I SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS APPLICATIONS • Low F r e q u e n c y P o w e r A m p l if i e r s (B -C lass P u sh -p u ll, P o = l W ) ■ General P u r p o s e S w i t c h i n g C i r c u i t s FEATURES • Excellent h FE v s .

DTC115UK

Abstract: DTC115UU
Contextual Info: DTC115UU/DTC115UK / T ransistors D T C 1 1 5 U U / D T C 1 1 5 U K Digital Transistors Includes Resistors h ÿ > v 7* ^ y ^-/Transistor Switch • • tm Dimensions (Unit : mm) m # ^ )0 2) » f li f f it f ilc J : U tS /S L , S ë ± C 7 7 ' f V U - ' > a >

L25-M

Abstract: l25m BUT 1 BUT12
Contextual Info: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic C ollector-Base Voltage B U T12 850 VcES . B U T 12 A i C ollector Em itter Voltage : B U T 12 C ollector C urrent Pulse

T-10901

Abstract: M105 SD1527-08 SD1527-8 1090mhz 253c S88SC TACAN transistor 1030-1090MHz
Contextual Info: H / f llr f/C f « i n 11mI P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive m u i u y u M i c i yville, v m c , PA i 18936-1013 i u j j u ivi»* Montgomery Tel: 215 631-9840 ä - r m b U n - r « l5 z 7 - 0 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 Q FEATURES * S u ita b le fo r AF d riv e rs and o u tp u t stages * H igh c o lle c to r c u rre n t and L o w VCE sat C O M PLEM ENTARY TYPE BCP55 PARTM ARKING DETAILS - BCP52 B C P 5 2 - 10

KTA950

Abstract: ktc2120 C 2120 Y NPN transistor KTC 200
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE POT PROCESS KTC 2120 APPLICATIONS I Low F r e q u e n c y P o w e r A m p lifie rs ( B - C la s s P u s h - p u l l , P o = lW ) I General P u r p o s e S w itc h in g C i r c u its FEATURES »Excellent Ii f e

2N3800

Abstract: 2N3805 2N3726 2N3729 2N3804 2N3804A 2N2978 2n3423 2N3803 2N3812
Contextual Info: Discrete Devices Transistors Cont. Differential and Dual Amplifiers (C ony_ u r i a u i c i c A m bien t P q Type Polarity One Both Side Sides mW mW V c E (S a t) @ Ic / lß Hf e @ 'C VCB VCE Tracking Electrical Characteristics @ 25° C (One Side) M axim u m Ratings

BSW68

Abstract: 2N3055 mj2955 50004 2N3440 ST bdy90 BSV64 BSW68A
Contextual Info: MilitaryAerospace Division Military-Aerospace Division C EC C 5 0 0 0 0 qualified m etal case transistors A p p ro val no M /0 1 0 3 /C E C C /U K available on r e q u e s t w ith options for additional screening to e ith e r se q u e n c e A, B, C or D.

ve90

Abstract: CM 3258
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT FZT849 HIGH PERFORMANCE TRANSISTOR IS S U E 3 - J A N U A R Y 1996 - FEAT U R ES * E x tre m e ly lo w e q u iv a le n t on -re sistan ce ; R c E(M,|36m i2 a t 5 A * 7 A m p c o n tin u o u s c o lle c to r cu rre n t (20 A m p peak)

UPA102G

Abstract: 8108T PC2768G 2757T PC2766 UPC2798GR
Contextual Info: Configuration Drawings Frequency Downconverters U P C 2731G S ose UPC1685G U PC1686G U PC1687G U PC 2721G R U PC2722G R Coupling ose (Feedback) ose (Bypass) (Bypass) U PC2734G R U PC2753G R U P C 2743G S /44G S E E E _n= E E r E E E E E U PC2768G R U P C 2756T

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 - JUNE 94 FEATURES * 2 A m p s c o n tin u o u s c u rre n t * U p to 5 A m p s p eak c u rre n t * V e ry lo w s a tu ra tio n v o lta g e * E x c e lle n t g a in ch a ra c te ris tics up to 2 A m p s