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    TYPES OF TRANSISTER Search Results

    TYPES OF TRANSISTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H480FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ PHASE input type Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ IN input type Visit Toshiba Electronic Devices & Storage Corporation
    TB67S580FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S581FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S589FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver / Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / CLK input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation

    TYPES OF TRANSISTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fuji step motor

    Abstract: No abstract text available
    Text: High Performance Multifunctional Inverters Maximum Engineering for Global Advantage FUJI INVERTERS With the flexibility and functionality to support a wide range of applications on all types of mechanical equipment, the FRENIC-MEGA takes core capability, responsiveness, environmental awareness, and


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    PDF MEH655a C09a/C08) fuji step motor

    an5296

    Abstract: Harris CA3018 Harris CA3146e CA3018 CA3046 CA3083 CA3146 CA3146A CA3183 CA3183A
    Text: CA3146, CA3183 S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • • • • • The CA3146A, CA3146, CA3183A, and CA3183* are general purpose high voltage silicon n-p-n transistor arrays on a common monolithic substrate.


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    PDF CA3146, CA3183 CA3146A, CA3183A, CA3183* 120MHz CA3183, an5296 Harris CA3018 Harris CA3146e CA3018 CA3046 CA3083 CA3146 CA3146A CA3183 CA3183A

    an5296

    Abstract: CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN
    Text: CA3146, CA3146A, CA3183, CA3183A S E M I C O N D U C T O R High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)


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    PDF CA3146, CA3146A, CA3183, CA3183A 120MHz CA3146A) an5296 CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN

    AN5296 Application of the CA3018 Integrated

    Abstract: an5296 CA3146 CA3183 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE
    Text: CA3146, CA3146A, CA3183, CA3183A Data Sheet September 1998 File Number 532.4 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a common monolithic substrate. • Matched General Purpose Transistors


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    PDF CA3146, CA3146A, CA3183, CA3183A CA3183A, CA3183 120MHz AN5296 Application of the CA3018 Integrated an5296 CA3146 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE

    bluetooth advantages and disadvantages

    Abstract: japanese transistor manual substitution verilog code for speech recognition japanese transistor substitution 29LV160 29lv200 transister 117 29lv400 apex20k400 K52 Package
    Text: PF1084-05 S1C33 Family Data Sheets • S1C33 Family • S1C33000 Core • S1C33209 S1C33T01 S1C33L01 S1C33S01 S1C33221/222 S1C33240 S1C33210 S1C33205/225/226/245 S1C33L03 S1C33 Family Development Environment • S1C33 Family Middleware and Firmware


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    PDF PF1084-05 S1C33 S1C33000 S1C33209 S1C33T01 S1C33L01 S1C33S01 S1C33221/222 S1C33240 bluetooth advantages and disadvantages japanese transistor manual substitution verilog code for speech recognition japanese transistor substitution 29LV160 29lv200 transister 117 29lv400 apex20k400 K52 Package

    R5F21134FP

    Abstract: R5F21134 failure test report PULSE MODE CURRENT SOURCE IC endurance test report
    Text: Report No. MSR-04-1035 Date:Oct 25, 2004 RENESAS SEMICONDUCTOR RELIABILITY REPORT DEVICE: R5F21134FP APPLICATION: Single chip microcomputer for consumer Reported by Y.Shimizu Confirmed by Y.Iwamoto Approved by T. Matsunaga MCU Quality Assurance Dept. Quality Assurance Div.


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    PDF MSR-04-1035 R5F21134FP R5F21134FP. 16-bit 32-pin R5F21134-001FP. 100pF XOUT/P47 R5F21134FP R5F21134 failure test report PULSE MODE CURRENT SOURCE IC endurance test report

    transistor MJ 13003

    Abstract: transistor bd 711 step-down sot-23-5 input DIL M50 coil pin diagram of 8355 shindengen MC mj 13003
    Text: Rev.1.2-11 ULTRA-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM


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    PDF S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57 transistor MJ 13003 transistor bd 711 step-down sot-23-5 input DIL M50 coil pin diagram of 8355 shindengen MC mj 13003

    transistor MJ 13003

    Abstract: mj 13003
    Text: Rev.1.2 ULTRA-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM


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    PDF S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57 UP003-A-C-SD-1 UP003-A-R-SD-1 BD006-A BD006-A-P-SD-1 BD006-A-C-SD-2 transistor MJ 13003 mj 13003

    2SK1365

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type π-MOS II.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.5Ω (Typ.) • High Forward Transfer Admittance


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    PDF 2SK1365 2SK1365

    serdes hdmi optical fibre

    Abstract: camera-link to hd-SDI converter RS-485 spice camera-link to HDMI converter 10G BERT 40 pin lvds laptop connector camera-link to 3G-SDI converter hd-SDI deserializer LVDS HDMI cat5 specifications of tdr
    Text: LVDS Owner’s Manual Including High-Speed CML and Signal Conditioning Fourth Edition 2008 High-Speed Interface Technologies Overview. 9-13 Network Topology. 15-17 SerDes Architectures. 19-29 Termination and Translation.31-38


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    Hyperstone

    Abstract: ding dong GMS30C2116 GMS30C2132 GMS30C2216 GMS30C2232 d1135
    Text: Jun. 29, 2001 Ver. 3.1 16/32 BIT RISC/DSP GMS30C2216 GMS30C2232 USER’S MANUAL Revision 3.1 Published by IDA Team in Hynix Semiconductor Inc. ¨ ÏHynix Semiconductor 2001. All Right Reserved. Hynix Offices in Korea or Distributors and Representatives listed at address directory may


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    PDF GMS30C2216 GMS30C2232 32bits Hyperstone ding dong GMS30C2116 GMS30C2132 GMS30C2216 GMS30C2232 d1135

    d2166

    Abstract: Hyperstone ding dong GMS30C2116 GMS30C2132 d1431 6116 sram d557 d2529 sr0n
    Text: Jun 13, 2001 Ver. 3.1 16/32 BIT RISC/DSP GMS30C2116 GMS30C2132 USER’S MANUAL Revision 3.1 Published by IDA Team in Hynix Semiconductor Inc. ¨ ÏHynix Semiconductor 2001. All Right Reserved. Hynix Offices in Korea or Distributors and Representatives listed at address directory may serve


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    PDF GMS30C2116 GMS30C2132 32bits d2166 Hyperstone ding dong GMS30C2116 GMS30C2132 d1431 6116 sram d557 d2529 sr0n

    smd transistor marking 12W

    Abstract: smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
    Text: 8. P r e c a u t io n s in H a n d l i n g s urfa c e m o u n t d e v ic e s S M D types of surface m ount transistors, as described below: (1) Super Mini Transistor (TO-236 equivalent) The Super Mini Transistor’s envelope is com­ parable to those of the TO-236 and SOT-23


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    PDF O-126 O-220 O-236 OT-23 O-220SM O-22QSM T0-220SM smd transistor marking 12W smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor

    AN5296 Application of the CA3018 Integrated

    Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
    Text: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max


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    PDF 43DP271 004703S CA3146, CA3183 CA3146A, CA3183A, CA3183* A3146A CA3146 AN5296 Application of the CA3018 Integrated TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY

    CA3183

    Abstract: AN5296 application note ca3146 AN5296 Application of the CA3018 Integrated 3146A A3146 CA3146AM96 I1021 A3183
    Text: îSî h a r r i s ou semiconductor CA3146, CA3146A, CA3183, CA3183A High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - V b e M a tc h .±5m V Max


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    PDF CA3146, CA3146A, CA3183, CA3183A CA3183A, CA3183 CA3146A CA3146 AN5296 application note AN5296 Application of the CA3018 Integrated 3146A A3146 CA3146AM96 I1021 A3183

    Untitled

    Abstract: No abstract text available
    Text: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a


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    PDF CA3146, CA3146A, CA3183, CA3183A CA3183

    thyristor Q 720

    Abstract: gate stacks Device Name 23 330 FDS3500 FDS602T
    Text: STA C K •R E C TIFIER DIODE STACKS Mitsubishi stacks come in a variety of connection modes and voltage and current ratings so that they can be used in all kinds of DC and AC applications. Mitsubishi stacks include rectifier diode stacks, thyristor stacks, and stacks


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    PDF FOS402BE FTSI201ST 201SP FTS1500SJ FTS1500SR FTS2500SR FTS1500SU FTS2500SU 110to thyristor Q 720 gate stacks Device Name 23 330 FDS3500 FDS602T

    TRIAC RCA ca3058

    Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
    Text: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in­ tegrated circuits and MOS field-effect transistors for both industrial and con­ sumer applications. An Index to Devices provides a complete listing of


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    CMOS op-amp

    Abstract: No abstract text available
    Text: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 1 HIGH PERFORMANCE, HIGH RELIABILITY, CMOS ARRAY FAMILY


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    PDF USI-6000 CMOS op-amp

    USI6000

    Abstract: MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister
    Text: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 This Material Copyrighted By Its Respective Manufacturer


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    PDF USI-6000 C31G33 USI6000 MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK2030 Field Effect Transistor Silicon N Channel MOSType c-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - r ds (ON) = 0 .1 0Q (Typ.) • High Forward Transfer Admittance


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    PDF 2SK2030 100nA

    Untitled

    Abstract: No abstract text available
    Text: GOULD 4055916 GOUL D IN C / GOULD A M I SEMI CONDUCTOR 03 DIV D • 03E MDSSTlb 1 1494 DQ114TM 0^ TABLE OF CONTENTS SECTION 1: DESIGN INFORMATION 1.1 CHOOSING AN ARRAY. 1-5 1.1.1 Determining Gate Count. 1-6


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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1928 Field Effect Transistor Silicon N Channel MOSType itMOS II High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' ^DS(ON) = 0.7Q (Typ.) • High Forward Transfer Admittance - lYfSl= 10S (Typ.)


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    PDF 2SK1928 0021fc

    rs flip-flop IC 7400

    Abstract: 74ls105 TTL LS 7400 74LS series logic gates 7400 fan-out 74LS 3 input AND gate IC TTL 7400 schematic 74LS04 fan-out 74ls series logic family 90 watts inverter by 12v dc with 6 transisters
    Text: GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Ovar operating free-air temper­ ature range unless otherwise noted Supply Voltage Vq c (See Note 1) Input Voltage V|n (See Note 1) Interemitter Voltage (See Note 2) Resistor Node Voltage, 54121, 74121 (See Note 1)


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