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    2SK1365 Price and Stock

    Toshiba America Electronic Components 2SK1365

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    Bristol Electronics 2SK1365 140
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    Toshiba America Electronic Components 2SK1365F

    Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA 2SK1365F 1,000
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    Others 2SK1365F

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    Chip 1 Exchange 2SK1365F 240
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    Toshiba America Electronic Components 2SK1365(F)

    MOS Power Transistors HV 200V (Alt: 2SK1365(F))
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    EBV Elektronik 2SK1365(F) 143 Weeks 50
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    2SK1365 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1365 Toshiba TRANS MOSFET N-CH 1000V 7A 3(2-16F1B) Original PDF
    2SK1365 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK1365 Toshiba N-Channel MOSFET Original PDF
    2SK1365 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1365 Toshiba Original PDF
    2SK1365 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, switching power supply applications Scan PDF
    2SK1365 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (pi-MOSII.5) Scan PDF
    2SK1365(F) Toshiba 2SK1365 - MOSFET N-CH 1KV 7A 2-16F1B Original PDF

    2SK1365 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    800v nmos

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)


    OCR Scan     		2SK1365 800v nmos PDF

    k1365

    Abstract: 2SK1365
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1365 k1365 2SK1365 PDF

    diode U1J

    Abstract: 2SK1365
    Text: T O S H IB A 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S SWITCHING PO W ER SUPPLY APPLICATIONS • Low Drain-Source O N Resistance


    OCR Scan     		2SK1365 -l-50 diode U1J 2SK1365 PDF

    k1365

    Abstract: toshiba l40 2SK1365
    Text: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII.5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING POWER SUPPLY APPLICATIONS 1 5 .8 1 0 .5 , • Low Drain-Source ON Resistance


    OCR Scan     		2SK1365 k1365 toshiba l40 2SK1365 PDF

    k1365

    Abstract: No abstract text available
    Text: 2SK1365 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1365 Switching Power Supply Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)


    Original     		2SK1365 2-16F1B k1365 PDF

    k1365

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII .5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING PO W ER SUPPLY APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5 .8 ± 0 .5 | • Low Drain-Source ONResistance


    OCR Scan     		2SK1365 300/uA k1365 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 1 365 SEM ICONDUCTOR TO SH IBA SILICON N CHANNEL MOS TYPE TECHNICAL tt- M O S II .5 DATA (2SK1365) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. SWITCHING POWER SUPPLY APPLICATIONS.


    OCR Scan     		2SK1365 2SK1365) VDD-400V, 2SK1365 PDF

    k1365

    Abstract: No abstract text available
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1365 2-16F1B k1365 PDF

    k1365

    Abstract: k136 2SK1365
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)


    Original     		2SK1365 k1365 k136 2SK1365 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O S II5 2 S K 1 365 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS U nit in mm SWITCHING PO W ER SUPPLY APPLICATIONS r • Low Drain-Source ON Resistance


    OCR Scan     		2SK1365 PDF

    k1365

    Abstract: 2SK1365 416W
    Text: 2SK1365 東芝電界効果トランジスタ .5 シリコンNチャネルMOS形 π−MOSⅡ 2SK1365 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 1.5Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。


    Original     		2SK1365 2-16F1B 2006-11toff VDD400 K1365 k1365 2SK1365 416W PDF

    K1365

    Abstract: 2SK1365 K136
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1365 K1365 2SK1365 K136 PDF

    2SK1365

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type π-MOS II.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.5Ω (Typ.) • High Forward Transfer Admittance


    Original     		2SK1365 2SK1365 PDF

    K1365

    Abstract: 2SK1365
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1365 K1365 2SK1365 PDF

    k1365

    Abstract: 2SK1365
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)


    Original     		2SK1365 k1365 2SK1365 PDF

    transistor 2SK1603

    Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
    Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all


    OCR Scan     		OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF