TYPE EM 2222 - E Search Results

Contextual Info: Ö23b32ü 0017300 1 32E D ISIP NPN Silicon Switching Transistor SXT 2222 A SIEMENS/ SPCLi SEMICONDS r - s s '- if • High current gain: 0.1 to 50 0 m A • Low collector-em itter saturation voltage Type M a rk in g O rd e rin g c o d e fo r v e rs io n s in b u lk

type em 2222 - E

Abstract: V/S-808
Contextual Info: 2222 808 2 0 5 mm FILM DIELECTRIC TRIMMERS Housing diameter 5 mm For consu mer arid industria f eq ii 3prnem: QUICK R E F E R E N C E DATA r^min^max - tr 1.6/5 to 3.S/2? pF Rated voltage 150 V Housing diamete- 6 mm Climatic category 40/85/21 for PC versions and

transistor tt 2222

Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
Contextual Info: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.

mu222

Abstract: 1b33
Contextual Info: 2222 809 07 N._ FILM DIELECTRIC TRIMMERS 9 * ft * H igh i-smp-s ratu m type Housing dim&iWiQn-Si 11 mm x 14 mm x 9 mm IrOr ba sic- g rid oi 2,54- mm For professional applseaisons, e-g, fine adj:u-stma«i of h.L Juried c-irciifas, capacitive volume or

BLY89A

Abstract: transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2
Contextual Info: P H I L I P S IN T E R N A T IO N A L MAINTENANCE TYPE M IE D H 7 1 1 0 0 2 b 0 0 2 7 ^ 5 1 ^•P H IN BLY89A T~33~/3 V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 13,5 V . The transistor is resistance stabilized. Every

IEC418-1

Abstract: IEC68 jv2222
Contextual Info: 2222 808 2 0 5 mm FILM DIELECTRIC TRIMMERS o Housing diameter 5 mm o For consumer and industrial equipm ent Q UICK REFERENCE D A T A Cm m -^m ax 1.5/5 to 3.5/27 pF Rated voltage 150 V Housing díam ete' 5 rnrn C lim atic category 40/85/21 fo r PC versions and

transistor SMD t34

Abstract: t34 transistor MCB030 transistor smd Catalogue transistor SMD Z2 BLU56 k 1358 SMD transistor Z2 transistor 6 pin SMD Z2 UHF TRANSISTOR
Contextual Info: Philips Semiconductors ?HÜÔ2b Data sheet status Product specification date of issue January 1991 □□bT3TG 3TT BiPHIN BLU56 UHF power transistor FEATURES QUICK REFERENCE DATA RF perform ance at Ts < 60 °C in a com m on em itter class-B test circuit see

transistor tt 2222

Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
Contextual Info: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­

BLV57

Contextual Info: N AUER PHILIPS/DISCRETE fciTE D • bb53T31 002^050 bb2 BLV57 U.H.F. LINEAR PUSH-PULL POWER TRANSISTOR Two n-p-n silicon planar epitaxial transistor sections in one envelope to be used as push-pull amplifier, prim arily intended fo r use in linear u.h.f. television transmitters and transposers.

transistor rf cm 1104

Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
Contextual Info: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

122d transistor

Abstract: Si 122D 122d BLU11/Si 122D transistor 4312
Contextual Info: bSE. T> 711002b 00bS7D0 47T M P H I N BLU11/SL PHILIPS INT ERN ATI ON AL U.H.F. POW ER TR A N S IS TO R N-P-N silicon planar epitaxial transistor prim arily intended fo r use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.

B303D

Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Contextual Info: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.

4312 020 36640

Abstract: ferroxcube wideband hf choke
Contextual Info: PHILIPS INTERNAT ION AL b5E D 751 I IPHIN Ei 711002b BLV75/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile

Contextual Info: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features

Contextual Info: b b 5 3 c1 3 1 Philips S em iconductors 0030055 T27 M A P X Product specification VHF linear push-pull power MOS transistor BLF348 N AUER PHILIPS/DISCRETE b 'lE lT PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

ac 0624 transistor 17-33

Contextual Info: Philips Semiconductors • b b 5 3 T 31 D D 3QDfib STD H A PX Product specification UHF power MOS transistor BLF521 N AUER PHILIPS/DISCRETE FEATURES b^E 3> ■ PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

2222-809-05002

Abstract: philips e3 Philips Electrolytic Capacitor 16v BLU60-12 B6PN
Contextual Info: PHILIPS INTERNAT IO NAL bSE D E3 7110ÖSb DDLE7S1 =131 BLU60/12 l U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.

BLU45/12

Contextual Info: PHILIPS INTERNATIONAL b5E D • 711002b 00b273b b25 ■ PHIN BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features

Contextual Info: Philips S em iconductors bb53T31 0 0 30 1 7 3 6B3 • APX UHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE Product specification BLF548 b^E D . — PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

Contextual Info: Philips S em iconductors D03004b M MB A P X Product specification VHF power MOS transistor BLF346 N AMER PHILIPS/DISCRETE FEATURES b^E D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bb53^31 □DE‘1131 b'U I IAPX BLV91/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.

BJE 42

Abstract: 9 BJE 42
Contextual Info: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability

transistor 9567

Abstract: 271 Ceramic Disc Capacitors 72741 i 72741 BLF521 IEC134 JLF521 9567 transistor
Contextual Info: Philips Sem iconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7- 3 1 - 0 7 ' 5bE ]> BLF521 7110â2Li D D M 3 ci3l4 70S • PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

Contextual Info: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features