TY080S120S6PU Search Results
TY080S120S6PU Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
277AContextual Info: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
Original |
TY080S120A6OU TY080S120S6PU TY093S120A6OU TY102S120A6OU TY102S120S6PU TY119S120A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 277A | |
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Contextual Info: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
Original |
2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
Original |
TY080S120A6OU TY080S120S6PU TY093S120A6OU TY102S120A6OU TY102S120S6PU TY119S120A6OU 11-Mar-11 |