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    TT220 Price and Stock

    On-Shore Technology Inc OSTTT220181

    TERM BLOCK PLUG 22POS 90DEG 5MM
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    DigiKey OSTTT220181 Bulk 11
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    On-Shore Technology Inc OSTT2200150

    TERM BLOCK 20POS 5MM PCB
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    DigiKey OSTT2200150 Bulk 14
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    On-Shore Technology Inc OSTT2202151

    TERM BLOCK 20POS 5.08MM PCB
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    DigiKey OSTT2202151 Bulk 14
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    On-Shore Technology Inc OSTT2200151

    TERM BLOCK 20POS 5MM PCB
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    DigiKey OSTT2200151 Bulk 14
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    Anytek Technology Corporation Ltd TT2201810000G

    TERM BLOCK PLUG 22POS 90DEG 5MM
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    DigiKey TT2201810000G Bulk 2,030
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    RS TT2201810000G Bulk 2,030
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    Onlinecomponents.com TT2201810000G
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    Interstate Connecting Components TT2201810000G
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    Find more TT220 price and stock on Findchips.com

    TT220 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TT22012 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    TT2201800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK PLUG 22POS 90DEG 5MM Original PDF
    TT2201810000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK PLUG 22POS 90DEG 5MM Original PDF
    TT2202 Sanyo Semiconductor Horizontal Deflection Switching Transistors Original PDF

    TT220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TT2202

    Abstract: IT02889 tt22
    Text: TT2202 注文コード No. N 8 0 3 6 三洋半導体データシート N TT2202 NPN 三重拡散プレーナ形シリコントランジスタ カラーテレビ水平偏向出力用 特長 ・高速度である。 ・高耐圧である （VCBO=1500V） 。


    Original     		PDF TT2202 100mA, IT02887 IT02884 IT02888 IT02889 TT2202 IT02889 tt22

    TT2202

    Abstract: TT220 ENN8036 IT02889
    Text: TT2202 Ordering number : ENN8036 TT2202 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).


    Original     		PDF TT2202 ENN8036 TT2202 TT220 ENN8036 IT02889

    Untitled

    Abstract: No abstract text available
    Text: FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =1.7V @ IC = 5A Using novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential.


    Original     		PDF FGP5N60LS O-220 100oC

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    STLT29

    Abstract: STLT29FI STLT30 STLT30FI
    Text: 7 ^ 5^537 0 0 2 1 2 0 e] fl STLT30/FI STLT29/FI SGS-THOMSON iy 5 7 , N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS S 6 S-TH0MS0N T YPE V DSS ^D Sfon Id STLT30 STLT30/FI 60 V 60 V cs 00 o o a 00 o o 25 A 15 A STLT29 STLT29/FI 50 V 50 V 0.08 n


    OCR Scan     		PDF 0G212Ã STLT30/FI STLT29/FI STLT30 STLT29 STLT29/FI O-220 ISOWATT220 7clSciS37 STLT29FI STLT30FI

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON [MOigœilLiera *® STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss S TP2N A 50 STP2NA 50FI R d S oii 500 V 500 V < 4 a. < 4 0. Id 2 .8 A 2 A Cl • TYPICAL RüS(on) =3.25 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STP2NA50 STP2NA50FI STP2NA50/FI ATT220

    Untitled

    Abstract: No abstract text available
    Text: VN B10N07/K10N07FM VNP10N07FI/VNV10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B10N 07 VNK1 0 N 07 F M VNP1 0 N 0 7 F I VN V10N 07 Vclamp 70 70 70 70 V V V V R D S o n 0.1 0.1 0.1 0.1 Q. a n Cl 11im 10 10 10 10 A A A A . . . . . . LINEAR CURRENT LIMITATION


    OCR Scan     		PDF B10N07/K10N07FM VNP10N07FI/VNV10N07 O-263 VNB10N07, VNK10N07FM, VNP10N07FI VNV10N07 Vertical10N07FI-VNV10N07 PowerSO-10

    Untitled

    Abstract: No abstract text available
    Text: S G S -T H O M S O N l f o M D S B m iC T IF M O lg S o a b / c S E R IE S VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT PRELIMINARY DATA . . . . . . . . . • V E R Y LO W D R O PO U T VO LTA G E 0.45V V E R Y LO W Q U IE S C E N T C U R R EN T (TYP. 50 \xA IN O F F M O D E, 500|aA IN ON


    OCR Scan     		PDF Q07ShbH

    Untitled

    Abstract: No abstract text available
    Text: STPR151OD/F STPR1520D/F SGS-THOMSON £ RjflQ»[E[UiM R!lD gi ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY


    OCR Scan     		PDF STPR151OD/F STPR1520D/F T0220AC STPR1510D STPR1520D T0220AC ISOWATT220AC, TT220A STPR1510F STPR1520F

    tp3055

    Abstract: MTP3055EFI TP3055E MTP3055E TP3055EFI
    Text: Gì SCS-THOMSON MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI V d ss R o S on Id 60 V 60 V 0.1 5 Q 0.15 Si 14 A 10 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF MTP3055E TP3055EFI MTP3055EFI O-220 ISOWATT220 ISQWATT220 MTP3055E/FI tp3055 MTP3055EFI TP3055E TP3055EFI

    IRFZ42fi

    Abstract: airbag
    Text: Z ìi S G S -T H O M S ODeiN IRFZ42 IRFZ42FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 2 4 2 IR F Z 4 2 F I V dss RDS on Id 50 V 50 V 0 .0 3 5 Q 0 .0 3 5 Q 43 A 24 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF IRFZ42 IRFZ42FI O-220 ISOWATT220 IRFZ42/FI GC37000 IRFZ42fi airbag

    GC20930

    Abstract: 6v dc motor IG 2200 19
    Text: SGS-THOMSON STP25N06 STP25N06FI IM N - CHANNEL EN H A N C EM EN T M ODE PO W ER M OS TR A N SISTO R TYPE STP25N06 STP25N06FI . . . . . . V dss RDSfon 60 V 60 V 0.07 0.07 Id a il 25 A 16 A AVALANCHE RUG G EDN ESS TEC HNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C


    OCR Scan     		PDF STP25N06 STP25N06FI STP25N06FI O-220 ISOWATT22Q STP25N06/FI GC20930 6v dc motor IG 2200 19

    irf540

    Abstract: IRF540FI irf540 circuit diagram IRF540 Rg
    Text: SGS-THOMSON ¿7 # KLU 1T^ o [MD(gS IRF540 IRF540FI N -C H A N NELEN HAN C E M E NT MODE POWER MOS TRANSISTORS TYPE IR F 5 4 0 IR F 5 4 0 F I V dss RDS(on) Id 100 V 100 V 0 .0 7 7 n 0 .0 7 7 £2 28 A 16 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED


    OCR Scan     		PDF IRF540 IRF540FI GC36230 IRF540/FI GC36B60 GC36270 IRF540FI irf540 circuit diagram IRF540 Rg

    IRFP 620

    Abstract: transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024
    Text: Æ 7 S C S IRF 620/FI-621/FI IRF 622/FI-623/FI T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRF620 IRF620FI 200 V 200 V 0.8 !2 0.8 Q 5 A 4 A IRF621 IRF621FI 150 V 150 V 0.8 Q 0.8 S2 5 A 4 A IRF622 IRF622FI 200 V 200 V


    OCR Scan     		PDF 620/FI-621/FI 622/FI-623/FI IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI IRFP 620 transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024

    IRF 260 N

    Abstract: transistor IRF 531 IRF 850 transistor 531 IRF 530
    Text: ¿ = 7 IRF 530/FI-531/FI IRF 532/FI-533/FI S G S -T H O M S O N ^ 7 # „ HlOiaiSiiBliaïUCTMMIKcül; N • CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIM INARY DATA TYPE V DSS ^DS on 'd ' IRF530 IRF530FI 100 V 100 V 0.16 n 0.16 n 14 A 9 A IRF531 IRF531FI


    OCR Scan     		PDF 530/FI-531/FI 532/FI-533/FI IRF530 IRF530FI IRF531 IRF531FI IRF532 IRF532FI IRF533 IRF533FI IRF 260 N transistor IRF 531 IRF 850 transistor 531 IRF 530

    TT220

    Abstract: transistor t220 BUZ71 dc to ac TT 220
    Text: {ZT SGS-THOMSON BUZ71 ^ 7 # ,. M g[M>g[L[I(g¥[Mg [M(gi_ BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) ^d " BUZ71 BUZ71FI 50 V 50 V 0.1 Q 0.1 0 14 A 12 A • VERY FAST SW ITCHING • LOW DRIVE ENE R G Y FOR EASY DRIVE,


    OCR Scan     		PDF BUZ71 BUZ71FI BUZ71 500ms TT220 transistor t220 BUZ71 dc to ac TT 220

    IRF 260 N

    Abstract: irf 640 IRF640 F640 TT220 IRF641 irf 80 n
    Text: 640 /FI 641/FI SGS-THOMSON ELiOT@KS IRF IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE R D S on Id IRF640 IRF640FI 200 V 200 V 0.18 n 0.18 n 18 A 10 A IRF641 IRF641FI 150 V 150 V 0.18 a 0.18 n 18 A 10 A . • . ■ V dss AVALANCHE RUGGEDNESS TECHNOLOGY


    OCR Scan     		PDF 641/FI IRF640 IRF640FI IRF641 IRF641FI O-220 ATT220 640/FI 640/FI-64 IRF 260 N irf 640 F640 TT220 irf 80 n

    STP60N06FI

    Abstract: STP60N06
    Text: 7^237 G D M b S M b 212 « S G T H SGS-TffOMSON STP60N06 STP60N06FI N - CHANNEL EN H A N C EM EN T MODE PO W ER MOS TRA N SISTO R TYPE STP60N06 STP60N06FI . . . • . V dss R D S o n Id 60 V 60 V < 0.02 Q < 0.02 a 60 A 32 A TYPICAL RDs(on) = 0.017 a AVALANCHE RUGGED TECHNO LO GY


    OCR Scan     		PDF STP60N06 STP60N06FI STP60N06 STP60N06FI 71SRE37 STP60N06/FI

    TDA1519Q

    Abstract: TDA1519BQ TDA1519 equivalent TDA1519AQ TDA1516 equivalent TDA1516AQ TDA1517 equivalent TDA1517B A1516 TDA1517BQ
    Text: Laboratory Report Philips Semiconductors Audio/Radio Products Audio power ICs for car-radio NBA9001 Authors: J.J. Sips, C. v.d. Wolf, C. Joosse 1. INTRODUCTION A new range of audio power ICs for car-radio has been released which offers customers a lot of advantages.


    OCR Scan     		PDF NBA9001 TDA1519Q TDA1519BQ TDA1519 equivalent TDA1519AQ TDA1516 equivalent TDA1516AQ TDA1517 equivalent TDA1517B A1516 TDA1517BQ

    3Na60

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON 3NA60 S T P 3 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3N A60FI V dss R DS(on) Id 600 V 600 V < 4 a <4 a 2.9 A 2.1 A . T Y P IC A L R Ds (on) = 3.3 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING


    OCR Scan     		PDF 3NA60 STP3NA60 A60FI

    w94C

    Abstract: 93CFI
    Text: bdw93 c f i BDW94CFI SGS-THOMSON iLESMKS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . SGS-THOMSON PREFERRED SALESTYPE MONOLITHIC DARLINGTON CONFIGURATION . COMPLEMENTARY PNP - NPN DEVICES 1 INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE A PP LICA TIO N S


    OCR Scan     		PDF bdw93 BDW94CFI TT220 BDW93CFI, ISOWATT220 BDW94CFI. BDW93CFI BDW94CFI w94C 93CFI

    7NA60

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON 7NA60 S T P 7 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7N A 60 STP7NA60FI • • . ■ ■ . ■ V dss R DS(on) Id 600 V 600 V < 1 a < 1 a 7.2 A 4 .4 A T Y P IC A L RDS(on) = 0.92 Q ± 30V G A TE TO S O U R C E V O LTA G E R ATING


    OCR Scan     		PDF STP7NA60FI 7NA60

    VB408

    Abstract: No abstract text available
    Text: VB408 / VB408B VB408-1 / VB408FI HIGH VOLTAGE LINEAR REGULATOR POWER I.C. TA R G ET DATA TYPE ^ V IN ,O U T h im VoUT 400 V 40 mA 1.25 to V |N-30 V VB408 VB408-1 VB408FI VB408B • INPUT VOLTAGE UP TO 400 V DC OR 285 V RMS RECTIFIED ■ OUTPUT VOLTAGE ADJUSTABLE FROM 1.25


    OCR Scan     		PDF VB408 VB408B VB408-1 VB408FI VB408FI VB408, VB408B,

    tt2201

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON stpsnaso iL iO M iQ £ I S T P 8 N A5 0 F I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP8NA50 STP8N A50FI V dss R DS(on) Id 500 V 500 V < 0.85 a < 0.85 a 8 A 4.5 A . T Y P IC A L R Ds (on) = 0.7 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING


    OCR Scan     		PDF STP8NA50 A50FI tt2201