Untitled
Abstract: No abstract text available
Text: SiA441DJ Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.047 at VGS = - 10 V - 12a 0.065 at VGS = - 4.5 V - 12a Qg (Typ.) 11 nC PowerPAK SC-70-6L-Single S 1 APPLICATIONS D • Portable and Consumer Devices
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SiA441DJ
SC-70-6L-Single
SC-70
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiA441DJ Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.047 at VGS = - 10 V - 12a 0.065 at VGS = - 4.5 V - 12a Qg (Typ.) 11 nC PowerPAK SC-70-6L-Single S 1 APPLICATIONS D • Portable and Consumer Devices
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SiA441DJ
SC-70-6L-Single
SC-70
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiA441DJ Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.047 at VGS = - 10 V - 12a 0.065 at VGS = - 4.5 V - 12a Qg (Typ.) 11 nC PowerPAK SC-70-6L-Single S 1 APPLICATIONS D • Portable and Consumer Devices
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SiA441DJ
SC-70-6L-Single
SC-70
2002/95/EC
11-Mar-11
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SI4565ADY
Abstract: list of P channel power mosfet Si4565ADY-T1-E3
Text: Si4565ADY Vishay Siliconix New Product N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 Qg (Typ) RoHS 6.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V
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Si4565ADY
Si4565ADY-T1-E3
08-Apr-05
list of P channel power mosfet
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list of P channel power mosfet
Abstract: Si4565ADY-T1-E3 Si4565ADY-T1-GE3
Text: Si4565ADY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.)
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Si4565ADY
Si4565ADY-T1-E3
Si4565ADY-T1-GE3
18-Jul-08
list of P channel power mosfet
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Untitled
Abstract: No abstract text available
Text: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8
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Si7454DDP
Si7454DDP-T1-Gelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI4565ADY
Abstract: SI4565ADY-T1-E3
Text: Si4565ADY Vishay Siliconix New Product N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 Qg (Typ) RoHS 6.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V
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Si4565ADY
Si4565ADY-T1-E3
70any
18-Jul-08
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Si4565ADY-T1-E3
Abstract: Si4565ADY-T1-GE3
Text: Si4565ADY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.)
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Si4565ADY
Si4565ADY-T1-E3
Si4565ADY-T1-GE3
11-Mar-11
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marking code vishay SILICONIX
Abstract: rl diode 205
Text: SiA441DJ Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.047 at VGS = - 10 V - 12a 0.065 at VGS = - 4.5 V - 12a Qg (Typ.) 11 nC PowerPAK SC-70-6L-Single S 1 APPLICATIONS D • Portable and Consumer Devices
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SiA441DJ
SC-70-6L-Single
SC-70
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code vishay SILICONIX
rl diode 205
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74452
Abstract: 70941
Text: New Product Si4566DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 Qg (Typ) RoHS 9.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V
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Si4566DY
Si4566DY-T1-E3
08-Apr-05
74452
70941
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Untitled
Abstract: No abstract text available
Text: SiA441DJ Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.047 at VGS = - 10 V - 12a 0.065 at VGS = - 4.5 V - 12a Qg (Typ.) 11 nC PowerPAK SC-70-6L-Single S 1 APPLICATIONS D • Portable and Consumer Devices
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SiA441DJ
SC-70-6L-Single
SC-70
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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74452
Abstract: Si4566DY Si4566 list of P channel power mosfet
Text: New Product Si4566DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 Qg (Typ) RoHS 9.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V
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Si4566DY
Si4566DY-T1-E3
18-Jul-08
74452
Si4566
list of P channel power mosfet
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Untitled
Abstract: No abstract text available
Text: Si4565ADY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.)
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Si4565ADY
Si4565ADY-T1-E3
Si4565ADY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4565ADY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.)
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Si4565ADY
Si4565ADY-T1-E3
Si4565ADY-T1-GE3
11-Mar-11
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SI4565AD
Abstract: No abstract text available
Text: Si4565ADY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.)
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Si4565ADY
Si4565ADY-T1-E3
Si4565ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4565AD
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Untitled
Abstract: No abstract text available
Text: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8
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Original
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Si7454DDP
Si7454DDP-T1-Gelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8
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Si7454DDP
Si7454DDP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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1N120BND
Abstract: TB334 HGT1S1N120BNDS HGT1S1N120BNDS9A HGTP1N120BND RHRD4120
Text: HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120BND,
HGT1S1N120BNDS
HGTP1N120BND
HGT1S1N120BNDS
TA49316.
RHRD4120
TA49056)
1N120BND
TB334
HGT1S1N120BNDS9A
RHRD4120
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HGT1S1N120BNDS
Abstract: HGT1S1N120BNDS9A HGTP1N120BND RHRD4120 TB334 1N120BND
Text: HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120BND,
HGT1S1N120BNDS
HGTP1N120BND
HGT1S1N120BNDS
TA49316.
RHRD4120
TA49056)
HGT1S1N120BNDS9A
RHRD4120
TB334
1N120BND
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KT88
Abstract: kt88 data TT21 TT22 marconi company marconi Marconi KT88
Text: BEAM TET R O D ES TT22 ISSUE 1 Beam tetrodes with oxide coated cathodes, the TT21 and TT22 are identical except for their heater ratings. They are designed for use as r.f. power amplifiers with full ratings at frequencies up to 30Mc/s and are also useful as audio output valves and pulse modulators.
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30Mc/s
131mm
116mm
KT88
kt88 data
TT21
TT22
marconi company
marconi
Marconi KT88
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vacuum tube amplifier
Abstract: TT22 22 TT21 TT-22 tube chronotrons vacuum tube "vacuum tube" TT15 vacuum tube applications TT22
Text: File C atalo g : Electron Tube Products T T - 8 * , TT-9, TT-13 O endi/r Types 1t t - i 5 , t t - 1 7 , t t - i 8 Section: G a s and Special Tubes ( TT-20, TT-21, TT-22 CHRONOTRONS DESCRIPTION These tubes a re d esig n ed for use in electronic control circuits to p ro vid e a time d e la y in a m anner sim ilar to an
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TT-13
TT-15,
TT-17,
TT-18
TT-20,
TT-21,
TT-22
vacuum tube amplifier
TT22 22
TT21
TT-22 tube
chronotrons
vacuum tube
"vacuum tube"
TT15
vacuum tube applications
TT22
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Pulse Transformers 13Z1001
Abstract: 13Z1023
Text: TYPE 13Z CONTROL TRANSFORMERS FEATURES • Meets design requirements of most sine wave inverter circuits. • High ET-Ratings. • High dielectric strength capability. • Fast rise time. • Low interwinding capacitance. • Materials meet flamability requirement of UL94vO.
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UL94vO.
E107307.
/tt22
13Z1017
13Z1018
13Z1019
13Z1020
13Z1021
13Z1022
13Z1023
Pulse Transformers 13Z1001
13Z1023
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UM22F
Abstract: UM-28 07H2 CT10H microtran DCM7 DCM19-PC DCM13-PC UM39-H
Text: "tamura MINIATURIZED AUDIO TRANSFORMERS Open Frame and Encapsulated Styles for PC Boards MICROTRAN ULTRA-MINIATURE-UM SERIES Frequency R esponse ±2dB 300 to 10,000 Hz M easured at level stated for 300 Hz. M in iatu rize d design otters a relatively high p o w e r level an A printed circuit packaging. Response measured at level
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MIL-T-27.
UM22F
UM-28
07H2
CT10H
microtran
DCM7
DCM19-PC
DCM13-PC
UM39-H
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AP105-RP17-1
Abstract: No abstract text available
Text: TYPE RP17 PUSH-PULL LOCK CONNECTORS Scope f RP17 series connectors are designed for interfacing 8 mm I video equipment and office automation equipment with I miniature, lightweight, high durability 12 pin circular Vconnectors. RP17 series connectors are ideal for quick connection and
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DC500V
AP105-RP17-1
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