TT 42F Search Results

Contextual Info: 00 PM TelecomBus Serializer Data Sheet Released da y, 10 Au g us t, 20 04 09 :1 7: PM5310 es , In c. on Tu es TBSTM DATA SHEET Proprietary and Confidential Released Issue 7 : November, 2001 Do wn lo ad ed by Sc o tt E st es of i 2T ec h no lo gi TelecomBus Serializer

50 Watt MOSFET amplifier

Abstract: 300 watt mosfet amplifier dca300 motor drive mosfet H bridge 300 Watt Amplifier IC 600 Watt Mosfet Power Amplifier
Contextual Info: MOD U LA R D E V I C E S INC 4SE D bE?42flS 0 0 0 0 2 A 1 T IMDI fiOO /300Watt SERVO AM PLIFIERS fo r DC MOTOR DRIVE Description DCA600/300 T The DCA600 and DCA300 are versatile and compact 600 watt and 300 watt rated servo amplifiers for DC motor drive and other linear amplifier applications. These linear

dbl 2052

Abstract: ba 5839 fp sj 2252 ba 5839 fb KSD 302 SCR 131- 6 WJ 66 SCR 131- 6 WJ 60 BR 5254 SCR 131- 6 WJ 69 KL SN 102 lcd
Contextual Info: HD66732 Graphics Liquid Crystal Display Controller/Driver Supporting JIS L evel-1 and Level-2 Kanji ROM HITACHI Rev 1.0 Jun. 1st, 1998 Description T he H D 66732 is a dot-m atrix liquid crystal display (LC D ) controller and driv er LSI that displays 1 l-b y -1 2

AN6356N

Abstract: MN6163 MN6168 AJE TI motor jun tuo AN63 AN6357 AN6357N ANS359N AN6356
Contextual Info: VTRffl MN6168 T * m - o r\-'W MN6168 VTR ¥ 4 •» L S I/ D ig ita l Servo L S I for Video Tape Recorders R l Ä - ^ K H E l / P i n Assignm ent i|* W te V T It/ l* ^ ÌH « fìg V T R i X r K V X ‘ 6 b T J MN6IC8 l i . •>' 9 L S I >>i T + . • r 'r * ? > & < n r i

MCF5202

Contextual Info: SECTION 9 ELECTRICAL CHARACTERISTICS 9.1 MAXIMUM RATINGS Table 9-1. Maximum Ratings RATING SYMBOL VALUE UNIT Supply voltage Vcc •0.3 to +7.0 V Input voltage Vi„ -0.5 to Vcc + 0.5V V Storage temperature range Tstg -55 to 150 °c The ratings in Table 9-1 define maximum conditions under which the device will

TT 42F

Contextual Info: SEMIKRON Vrsm Vrrm I fr m s maximum value for continuous operation 120 A (sin. 180; Ifa v V = 85 °C; 50 Hz) 42 A Tease SEMIPACK 1 Fast Dtode Modules SKKD 42 F SKMD 42 F SKND 42 F 1000 SKKD 42 F 10 SKMD 42 F 10 - 1200 SKKD 42 F 12 SKMD 42 F 12 SKND 42 F 12

Contextual Info: MITSUBISHI LS Is DRAM MODULE M H 2 M 3 2 B Y J -5 ,-6 ,-7 / MH2M32BNYJ-5,-6,-7 FAST PAGE MODE 67108864-BIT (2097152-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) (Both side] The MH2M32BYJ/BNYJ is 2097152-word x 32-bit dynamic RAM and consists of 16 industry standard 1M x 4 dynamic

BUK451-100A

Abstract: K451 BUK451-100B T0220AB transistor 513
Contextual Info: -7^ Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

MP 130I 00

Abstract: MP 130I MP -130I cmkm ECP11 BKD JE GLDG LC74795 LC74795M djrp
Contextual Info: Orònrirfl «MJfTTbCf : EM%555? CMOS LSI LC74795, 74795M SAgifOI On-Screen Display Controller LSI Preliminary Overview Package Dimensions The LC74795 und LCM795M are. CMOS LSIs las on­ screen diiplny, a function that displays characters and pattern* ori a TV acreen under microprocessor control,

HL8314E

Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

HL7836MG

Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
Contextual Info: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light

PM20CHA060

Abstract: 2 anode igbt inverter circuit diagram 3 phase inverters circuit diagram igbt 3 phase inverters circuit diagram igbt PM20CHA060 BP107 T-57-aa PM20CHA06
Contextual Info: P OIilEREX ¿ ^ I k J M INC E V S IE T> m 72 i4 b 2 1 DDDSb5f l ObO * P R X P M 20C H A 060 lE A -7= 5 7 - 2 5 Powerex, inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln t G llim O C P '^ - 3 M 0 d u l 0 S Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j ^ re e p ^ a s e

PPE PA GF30

Abstract: PA66 GF 25 relay PA66 - GF 25 relay AMP PBT gf33 connector AMP PBT gf30 connector PBT PET GF30 DELPHI Connectors weather-pack pa6 gb gf30 obd II connector AMP PBT GF30 4 pin
Contextual Info: Global Connection Systems Catalog Table of Contents World Headquarters and Customer Center Mail Code 483.400.306 5725 Delphi Drive Troy, Michigan 48098-2815 U.S.A. Tel: [1] 248.813.2334 Fax: [1] 248.813.2333 Asia Pacific Regional Headquarters No. 60, Yuan Guo Road

Contextual Info: MEMORY i i i S lllllììl S ^ 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM MB8118165B-50/-60 CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8118165B is a fully decoded CMOS Dynamic RAM DRAM th a t contains 16,777,216 memory

BDT61F

Abstract: 61AF BDT61BF BDT60AF BDT60BF BDT60CF BDT60F
Contextual Info: BDT61F; 61AF BDT61BF; 61CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope w ith an electrically insulated mounting base. They are recommended fo r applications such as audio output stages and general purpose amplifiers.

HL8312E

Abstract: 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE8815VG HL7841MG HE7601
Contextual Info: HITACHI/ OPTOELECTRONICS SME T> 44^fc.20S G 0 1 2 0 4 7 07T • HL7841MG (Preliminary) GaAIAs LD 7 Description The HL7841MG is a 0.78 (im band GaAIAs laser diode with a multi-quantum well (MQW) structure. It is especially suitable as a light source for laser beam printers with its low threshold current and low slope

Contextual Info: G M 71V 65803C G M 71V S65803CL LG Semicon Co.,Ltd. 8,388,608 W ORDS X 8 BIT CM OS DYNAMIC RAM Description Pin C o n fig u ratio n The GM71 V S 65803C/CL is the new generation dynam ic RAM organized 8,388,608 words by Sbits. The G M 7I V(S)65803C/CL utilizes advanced CMOS

HE8811

Abstract: HE8403 HE8807SG HE8812SG HE8813VG HE8815VG HL7842MG HL8312E he8813 Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS S4E D • 4H1b2GS DDISDMT TMB HL7842MG (Preliminary)_ GaAiAs ld Description The HL7842MG is a 0.78 (im band GaAiAs laser diode with a double heterojunction structure. It is suit­ able as a light source for laser beam printers, laser levelers and various other types of optical equipment.

Contextual Info: ^ 2 4 ^ 6 2 3 D D 2 3 f l7 t . MG2 MITSUBISHI LSIs • I1 IT 1 M5M4V4170J,TP,RT-6,-7,-8,-6S,-7S,-8S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family o f 262144-w ord by 1 6 -bit dynamic RAMs,

HL1221A

Abstract: HL1221AC HL8312E Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOEL ECT RONICS 54E D • OGlSGfi? 7 5 b I 44^205 InGaAsP LD HL1221 A/AC Description The HL1221A/AC are 1.2 pm band InGaAsP laser diodes with a double heterodyne structure. They are suitable as light sources in fiberoptic communications and various other types of optical applications.

HL7802E

Abstract: HE8807SG HE8813VG HE8815VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040
Contextual Info: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.

HE8813VG

Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
Contextual Info: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

hitachi he1301

Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro­ priate as the light source for various optical application devices, including laser beam printers and laser

T9040

Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are