1SS239
Abstract: No abstract text available
Text: SILICON EPITAXIAL SCHO TTKY BARRIER TY P E DIODE C A T V /U H F /V H F MIXER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range Vr Ip Tj Tstg RATING 6 30 125
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1SS239
1SS239
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2SK528
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOS INDUSTRIAL APPLICATIONS Unit in mm 7.0 1 J RATING 2 Vd s x 400 V vgss ±20 V DC Id Pulse idp 4 Drain Power Dissipation (Tc=25°C) Pd Channel Temperature Tch Storage Temperature Range Tstg CHARACTERISTIC
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2SK528
T0-220
a76-ai5
2SK528
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Untitled
Abstract: No abstract text available
Text: i TOSHIBA 2SA124A SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit In mm HIGH CURRENT SWITCHING APPLICATIONS. &811AX. FEATURES: . Low Collector Saturation Voltage : vCE(sat)*“0.4V(Max.) at Ic*-3A . High Speed Switching Time : tstg=1.0/<s(Typ.)
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2SA124A
811AX.
2SC3074
2SA1244
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Untitled
Abstract: No abstract text available
Text: 2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)
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2SC6079
2-7D101A
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Untitled
Abstract: No abstract text available
Text: 2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)
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2SC6075
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Untitled
Abstract: No abstract text available
Text: 2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6077 ○ Power Amplifier Applications ○ Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 µs (typ)
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2SC6077
2-10T1A
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VR4300i
Abstract: No abstract text available
Text: NEC 8. ¿iPD30200, 30210 ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings Ta = 25 °C Parameter Supply voltage Input voltageNote Symbol Condition V dd Vi Pulse of less than 10 ns Operating case temperature Storage temperature Note Tc Tstg The upper limit of the input voltage (V dd
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uPD30200
uPD30210
PD30200,
iPD30200-xxx.
PD30210-xxx.
PD30200-100
30210-xxx.
VR4300i
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RM 11B
Abstract: RM 10B RO 2 RO 2B Rectifier Diodes
Text: 4-1 Rectifier Diodes ●Surface-Mount VRM V 400 IF (AV) (A) Values in parentheses are for the products with heatsinks 2.0 Package Surface-Mount (SJP) Part Number SJPM-H4 IFSM (A) 50Hz Single Half Sine Wave 45 Tj (°C) Tstg (°C) -40 to +150 VF (V) max 1.1
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O-220F2Pin
O-220F
RM 11B
RM 10B
RO 2
RO 2B
Rectifier Diodes
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 190 / 145 380 / 290 ± 20 800 –40 . + 150 (125) 2 500 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C
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SKiiP 83 AC 12 i t 1
Abstract: SKiiP 83 AC 12 i t semikron skiip 83 83AC12 SKiiP 83 AC 12 SKIIP 83 AC 12 T 12 SKiiP 83 AC 12 i t 2 SKiiP 82 AC 12 i t 1 ct3 "current sensor" SKIIP
Text: SKiiP 83 AC 12 - SKiiP 83 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Values 1200 ± 20 125 / 85 250 / 170 – 40 . . . + 150 – 40 . . . + 125 2500 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min.
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Untitled
Abstract: No abstract text available
Text: 2SA1735 SILICON PNP EPITAXIAL T Y P E Unit in mm 4.6MAX . ] 7MAX. » POWER AMPLIFIER APPLICATIONS » POWER SWITCHING APPLICAGIONS Low Saturation Voltage : VcE sat =-0.5V(Max.) (Ic=-500mA) High Speed Switching Time: tstg=0. 2 5 |J S (Typ.) Small Flat Package
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2SA1735
-500mA)
2SC4540
-10mA,
-100mA
-700mA
-500mA,
-25mA
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Two color led
Abstract: No abstract text available
Text: SIEMENS SUPER-RED/ GREEN SUPER-RED/ GREEN USO 3331~«JO LSG 3351 -HO T1 3mm Two Color, Red and Green LED Lamp FEATURES Maximum Ratings • High Light Output Operating Temperature (Top).-5 5 “C to +100°C Storage Temperature (Tstg) . -55°C to +100°C
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3331-JO
3351-HO
Two color led
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npn phototransistor package
Abstract: No abstract text available
Text: SIEMENS BP 103 SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm FEATURES Maximum Ratings • • • • • • • • • Operating and Storage Temperature Range Hop, Tstg) . -4 0° to +80°C Soldering Temperature (¿2 mm from case bottom)
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LD242
cE02H
npn phototransistor package
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Untitled
Abstract: No abstract text available
Text: SKM 75 GB 176 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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s15s3
Abstract: D078 S15S4
Text: SHINDEN6EN ELECTRIC NFG si5s s 1 5 MIE D • 621^367 0D0004S 3 ■ SHEJ'T^oj.,7 A # O utline D im ensions # R atings C haracteristics Absolute MAX. Ratings Symbol Storage Temperature Range Tstg Junction Temperature T] Peak Reverse Voltage V rm Type Condition
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0D0004S
S15S3
s15s3
D078
S15S4
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Untitled
Abstract: No abstract text available
Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)
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2SC3076
2SA1241
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 1200 ± 20 33 / 22 66 / 44 37 / 25 74 / 50 V V A A A A − 40 . + 150 − 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C
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SK30GH123
ETIN\FRAMEDAT\datbl\B17-Semitop\SK30GH123
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Untitled
Abstract: No abstract text available
Text: SKM 100 GB 176 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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TCMMSZ5224B
Abstract: TCMMSZ5222B TCMMSZ5256B
Text: PRELIMINARY DATASHEET 500mW SOD-123 SURFACE MOUNT Flat Lead Surface Mount Plastic Package Zener Voltage Regulators Absolute Maximum Ratings Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation Value Units 500 mW TSTG Storage Temperature Range
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500mW
OD-123
TCMMSZ5224B
TCMMSZ5222B
TCMMSZ5256B
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Untitled
Abstract: No abstract text available
Text: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms
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Untitled
Abstract: No abstract text available
Text: SEM IC O N DU C TO R 300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes Absolute Maximum Ratings TSTG TJ WIV Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TC1N4148M Value Units 300 mW -65 to +150 °C +150
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DO-34
TC1N4148M)
TC1N4448M
TC1N914BM)
DB-100
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TCBAV19W
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package High Voltage & High Conductance Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG Device Type Device Marking TCBAV19W TCBAV20W TCBAV21W
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400mW
OD-123
TCBAV19W
TCBAV20W
TCBAV21W
TCBAV19W
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kl3r20
Abstract: No abstract text available
Text: SMD CSSPD KL SERIES K L i/'J -X • OUTLINE DIMENSIONS KL3R20, 25 f - O l «o_ l_js 3 Mr m% . 2.0 ir , , y ? * ; * * ; v n .fr- 1 B . — n- 1.2 101 : mm ■ RATINGS Absolute Maximum Ratings -^ T y p e No, item Symbol Storage Temperature Tstg -40-125 *c
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KL3R20,
KL3R20
KL3R25
kl3r20
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Untitled
Abstract: No abstract text available
Text: K1V22/K1V24/K1V26 Absolute Maximum Ratings m Item m » « Jp-fô R atings Unit Tstg - 40 ~ 125 °C Tj 125 °c V drm 180 V 1 A Operating Junction Temperature ^ "7^J± Maximum Off-state Voltage 20 A RMS On-state Current It Surge On-state Current I tsm yWtfi
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K1V22/K1V24/K1V26
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