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Toshiba America Electronic Components 2SC3076Y 2000 MA, 50 V, NPN, SI, SMALL SIGNAL TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components ()	2SC3076Y		15,540			1 $1.95 10 $1.95 100 $1.95 1000 $0.897 10000 $0.819	Buy Now
	2SC3076Y		560			1 $3.12 10 $3.12 100 $3.12 1000 $1.287 10000 $1.287	Buy Now
Toshiba America Electronic Components 2SC3076-Y,L1XHV(0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC3076-Y,L1XHV(0		1,000			1 $1.925 10 $1.925 100 $0.9625 1000 $0.77 10000 $0.77	Buy Now

2SC3076 Datasheets (32)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC3076	Kexin	Silicon NPN Epitaxial	Original	PDF
2SC3076	Toshiba	Silicon NPN Transistor	Original	PDF
2SC3076	Toshiba	NPN Transistor	Original	PDF
2SC3076	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SC3076	Unknown		Scan	PDF
2SC3076	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC3076	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC3076	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC3076	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC3076	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3076	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC3076	Unknown	Cross Reference Datasheet	Scan	PDF
2SC3076	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SC3076	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

2SC3076	Toshiba	SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR	Scan	PDF
2SC3076	Toshiba	Silicon NPN transistor for power amplifier and power switching applications	Scan	PDF
2SC3076	Toshiba	Toshiba Shortform Catalog	Scan	PDF
2SC3076(2-7B1A)	Toshiba	2SC3076 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SC3076(2-7B2A)	Toshiba	2SC3076 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SC3076(2-7J1A)	Toshiba	2SC3076 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF

2SC3076 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C3076 Abstract: 2SC3076 Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15	Original	2SC3076 O-252 C3076 C3076 2SC3076	PDF
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SC3076 2SA1241	PDF
Contextual Info: 2SC3076 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240	Original	2SC3076 Freq100M StyleTO-251	PDF
transistor c3076 Abstract: C3076 2SC3076 2SA1241 Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SC3076 2SA1241 transistor c3076 C3076 2SC3076 2SA1241	PDF
2SA1241 Abstract: 2SC3076 30J40 Contextual Info: TO SH IBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Iç; = 1 A) Excellent Switching Time : tstg = 1.0 /us (Typ.)	OCR Scan	2SC3076 2SA1241 2SA1241 2SC3076 30J40	PDF
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SC3076 2SA1241	PDF
2SC3076 Contextual Info: TO SH IBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Iç; = 1 A) Excellent Switching Time : tstg = 1.0 /us (Typ.)	OCR Scan	2SC3076 2SA1241 2SC3076	PDF
Contextual Info: T O SH IB A 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 Unit in mm POWER SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Ip = 1 A) Excellent Switching Time : tstg = 1.0	OCR Scan	2SC3076 2SA1241	PDF
C3076 Abstract: 2SA1241 2SC3076 Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SC3076 2SA1241 C3076 2SA1241 2SC3076	PDF
2SA1241 Abstract: 2SC3076 Contextual Info: T O S H IB A 2SC3076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • Low Collector Saturation V oltage : V CE (sat) = 0.5 V (Max.) (IC = 1 A) E xcellen t Sw itching Tim e : tgtg = 1.0	OCR Scan	2SC3076 2SA1241 2SA1241 2SC3076	PDF
Contextual Info: TOSHIBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = 0-5 V (Max.) (IC = 1 A) Excellent Switching Time : tgtg = 1.0 /¿s (Typ.)	OCR Scan	2SC3076 2SA1241	PDF
c3076 Abstract: 2SA1241 2SC3076 transistor c3076 Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SC3076 2SA1241 c3076 2SA1241 2SC3076 transistor c3076	PDF
Contextual Info: Reliability Tests Report Product Name: 2SC3076 Package Name: New PW-Mold 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s	Original	2SC3076	PDF
C3076 Abstract: 2SC3076 2SA1241 Contextual Info: 2SC3076 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。	Original	2SC3076 2SA1241 20070701-JA C3076 2SC3076 2SA1241	PDF

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1241 POWER AMPLIFIER APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. S8M AX. o FEATURES : * . Low Collector Saturation Voltage : VcE sat =-0.5V (Max.) (Ic=-1A) 1 . Excellent Switching Time : tstg=1.0/is (Typ.) . Complementary to 2SC3076	OCR Scan	2SA1241 2SC3076 50X50XQ	PDF
transistor c3076 Abstract: C3076 2SA1241 2SC3076 024 marking code Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SC3076 2SA1241 transistor c3076 C3076 2SA1241 2SC3076 024 marking code	PDF
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 U nit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SW ITCH IN G APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat) = °-5V (Max.) (Ic = lA) Excellent Switching Time : tgtg= 1.0/us (Typ.)	OCR Scan	2SC3076 2SA1241 B12-7B2A	PDF
Contextual Info: T O SH IB A 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 Unit in mm POWER SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE (sat) = 0.5V (Max.) (IC = 1A) Excellent Switching Time : ^ ^ = 1.0^3 (Typ.)	OCR Scan	2SC3076 2SA1241	PDF
2SC3076 Abstract: C3076 2SA1241 Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SC3076 2SA1241 2SC3076 C3076 2SA1241	PDF
Contextual Info: 2SC3076 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。	Original	2SC3076 2SA1241	PDF
2sc3076 Abstract: V7040 Contextual Info: 2SC3076 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. F EATURES : . L o w Collector Saturation Voltage : v C E s a t = 0 - 5V (Max.) (Ic=lA) . Excellent Switching Time : ts tg= l-0,us (Typ.) . C omplementary to 2SA1241	OCR Scan	2SC3076 2SA1241 2sc3076 V7040	PDF
2SA1241 Abstract: 2SC3076 30J40 Contextual Info: TOSHIBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Iç; = 1 A) Excellent Switching Time : tstg = 1.0 /us (Typ.)	OCR Scan	2SC3076 2SA1241 2SA1241 2SC3076 30J40	PDF
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SC3076 2SA1241	PDF
C3076 Abstract: 2SC3076 2SA1241 Contextual Info: 2SC3076 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。	Original	2SC3076 2SA1241 C3076 2SC3076 2SA1241	PDF

2SC3076 Search Results

2SC3076 Price and Stock

Toshiba America Electronic Components 2SC3076Y

Toshiba America Electronic Components 2SC3076-Y,L1XHV(0

2SC3076 Datasheets (32)

2SC3076 Datasheets Context Search

C3076

transistor c3076

2SA1241

2SC3076

C3076

2SA1241

c3076

C3076

transistor c3076

2SC3076

2sc3076

2SA1241

C3076