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    TSTA7300 Search Results

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    TSTA7300 Price and Stock

    Vishay Semiconductors TSTA7300

    EMITTER IR 875NM 100MA TO18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSTA7300 Bulk 1
    • 1 $3.71
    • 10 $2.509
    • 100 $3.71
    • 1000 $1.57256
    • 10000 $1.44656
    Buy Now

    Vishay Intertechnologies TSTA7300

    IR EMITTER HI EFF. 870NM TO18 12DEG-e4 - Bulk (Alt: TSTA7300)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TSTA7300 Bulk 6 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.5525
    • 10000 $1.4605
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    Mouser Electronics TSTA7300 2,498
    • 1 $3.79
    • 10 $2.56
    • 100 $2.04
    • 1000 $1.97
    • 10000 $1.44
    Buy Now
    Newark TSTA7300 Bulk 463 1
    • 1 $3.52
    • 10 $2.49
    • 100 $2.04
    • 1000 $1.9
    • 10000 $1.9
    Buy Now
    Future Electronics TSTA7300 Box 6 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.49
    • 10000 $1.49
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    Bristol Electronics TSTA7300 11
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    TTI TSTA7300 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.53
    • 10000 $1.44
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    EBV Elektronik TSTA7300 7 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    New Advantage Corporation TSTA7300 2,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.24
    • 10000 $2.09
    Buy Now

    TSTA7300 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSTA7300 Vishay Semiconductors Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HI EFF. 870NM TO18 12 Original PDF
    TSTA7300 Vishay Telefunken GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Original PDF

    TSTA7300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Telefunken GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a high radiant intensity without external optics.


    Original
    PDF TSTA7300 TSTA7300 D-74025 20-May-99

    TSTA7300

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Telefunken GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a high radiant intensity without external optics.


    Original
    PDF TSTA7300 TSTA7300 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high


    Original
    PDF TSTA7300 TSTA7300 D-74025 06-May-04

    TSTA7300

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics.


    Original
    PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics.


    Original
    PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity


    Original
    PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Telefunken GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a high radiant intensity without external optics.


    Original
    PDF TSTA7300 TSTA7300 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity


    Original
    PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    TSTA7300

    Abstract: No abstract text available
    Text: TSTA7300 GaAlAs IR Emitting Diode, Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a high radiant intensity without external optics.


    Original
    PDF TSTA7300 TSTA7300 D-74025 15-Jul-96

    TSTA7300

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity


    Original
    PDF TSTA7300 2002/95/EC 2002/96/EC TSTA7300 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics.


    Original
    PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics.


    Original
    PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC D-74025 08-Mar-05

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high


    Original
    PDF TSTA7300 TSTA7300 D-74025 08-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity


    Original
    PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original
    PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    tept5600 response time

    Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
    Text: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily


    Original
    PDF emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000

    Leader 8020 schematics Oscilloscope

    Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original
    PDF vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s

    diode SR 360

    Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
    Text: Eye Safety Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC EN DIN 60825-1 LEDs are removed from IEC 60825-1 but are still covered by the free air communication safety standard IEC 60825-12. Therefore LEDs for free air communication are still to be


    Original
    PDF 11-Sep-08 diode SR 360 IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet

    TSUS3400

    Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS SELECTOR GUIDE w w w. v i s h a y. c o m INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS Vishay Semiconductors Infrared Emitters


    Original
    PDF VMN-SG2123-1010 TSUS3400 VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01

    TSTA7300

    Abstract: No abstract text available
    Text: Temic TSTA7300 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant in­


    OCR Scan
    PDF TSTA7300 TSTA7300 D-74025 15-Jul-96

    diode si d 01n

    Abstract: No abstract text available
    Text: Tem ic TSTA7300 S e m i c o n d u c t o r s GaAlAs IR Emitting Diode, Hermetically Sealed T 018 Case Description T S T A 7 3 0 0 is a h ig h e ffic ie n c y in fra re d e m ittin g d io d e in G a A lA s o n G a A lA s te c h n o lo g y in a h e rm e tic a lly sealed


    OCR Scan
    PDF TSTA7300 -Jul-96 diode si d 01n

    CQX48B

    Abstract: TLH04400 TLRG542
    Text: V I^ ^ Y Vishay Telefunken Table of Virtual Source Sizes Part Nunber Virtual Source Size mm Part Nunber Virtual Source Size (mm) Part Nunber Virtual Source Size (mm) TLBR5410 3.6 TLHP5800 3.7 TLLY5401 3.7 TLDR4400 2.1 TLHR4200 1.5 TLMA3100 1.8 TLDR4900 2


    OCR Scan
    PDF TLBR5410 TLDR4400 TLDR4900 TLDR5400 TLDR5800 TLHE4900 TLHE5100 TLHE5101 TLHE5102 TLHE5800 CQX48B TLH04400 TLRG542

    c1g smd

    Abstract: bpv10nf TEMD2100
    Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -


    OCR Scan
    PDF CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100

    "IR Emitter"

    Abstract: TSTS7503 TSTS7101 30016
    Text: Temic Semiconductors Characteristics +/-< » Ie / mW/sr i& t,-*tf / ns Package Ip/mA Type High-Performance IR Emitter GaAlAs (870 nm in Plastic Package TSHA4400 30016) 40025) TSHA5200 TSHA52ÜJ 50030) 12° TSHA5202 . . . . 60036) 300 TSHA5203 - Ip/m A 20(>12)


    OCR Scan
    PDF TSHA4400 TSHA4401 TSHA5200 TSHA52 TSHA5202 TSHA5203 TSHA5500 TSHA5501 TSHA5502 TSHA5503 "IR Emitter" TSTS7503 TSTS7101 30016