TSOP54 OUTLINE Search Results

C4927

Abstract: SDRAM 2MX16X4 TSOP54 RNA4A8E103JT CC0603 2MX16x4 MCR03EZHF K4S281632B-TC-L1H cc0508 105-1089-00 RM73B1JT301J
Contextual Info: Valis_X2_BOM.txt # Board Station BOM file # date : Thursday September 20, 2001; 14:04:26 # Variant : No_Stuff REFERENCE COMPANY PART NO. COUNT DESCRIPTION GEOMETRY 1 2 05085C104MA11A 1 24 cap, AVX, 0.1uF outline cc0508 3 4 0603YC103JAT2A 0603YC104JAT2A 1 51

RNA4A8E472JT

Abstract: CC1812 j1 u10 samsung MCCA104K0NRT RC0402 RNA4A header 2x5 MIC29152BU SDRAM 2MX16X4 TSOP54 LED-0603
Contextual Info: # Board Station BOM file # date : Thursday August 14, 2003; 10:42:21 # Variant : No_Stuff REFERENCE C37 C38 C39 C40 C41 C42 C43 C44 C45 C46 C47 C48 C49 C50 C51 C52 C53 C55 C56 C57 C58 C59 C60 C61 C62 C63 C64 C65 C66 C67 C68 C69 C70 C71 C72 C73 C74 C75 C76

q1257

Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
Contextual Info: 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 1 Product Information 2003 / 2004 DRAM SPECTRUM www.infineon.com Never stop thinking. 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 2 Introduction September 2003. This edition of the DRAM Spectrum has been developed

512m pc133 SDRAM DIMM

Abstract: TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash
Contextual Info: Product Information 2004 MEMORY SPECTRUM w w w. i n f i n e o n . c o m / m e m o r y w w w. i n f i n e o n . c o m / m e m o r y / f l a s h Never stop thinking. Introduction A P R I L 2 0 0 4 . This edition of Memory Spectrum has been developed to enable you to easily view the entire range of Infineon’s memory products.

105-1089-00

Abstract: C26C31 BI HM00 motorola c100 CBGA360 MNR14 TSSOP48 outline TSSOP48 AMP 120527-1 st c102
Contextual Info: # Board Station BOM file # date : Thursday November 15, 2001;10:45:25 AM # Variant : No_Stuff REFERENCE C17 C1 C5 C47 C48 C49 C50 C51 C52 C53 C54 C55 C56 C6 C2 C3 C4 C16 C58 C59 C60 C61 C63 C64 C65 C66 C68 C69 C70 C72 C73 C74 C75 C77 C78 C79 C80 C97 C98 C99 C100 C101 C102

Contextual Info: IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A APPLICATION SPEC # 29L0000.E36980 Engineering Change Number 13 ROW /1 1 COL / 2 BS 16Mb x 4 I/O x 4 Bank 13 ROW /1 0 COL / 2 BS (8Mb x 8 I/O x 4 Bank) Date E36980 13 ROW / 9 COL / 2 BS (4Mb x 16 I/O x 4 Bank)

HC2500

Abstract: rc73l2 RNA4A RC0402 GAL-5 MIC29152BU K4S561632B-TC75 GRM39X7R104J016AD 0603YC104JAT2A 293D476X9016D2T
Contextual Info: # Board Station BOM file # date : Friday January 24, 2003; 13:5:20:00 PM # Variant : No_Stuff Valis Rev. X3 BOM Updated on 04/01/03 For 755 Processor Build Only. Add wire to C65 side faceing U8 to R88 via on Back Side. ITEM_NO COMPANY PART NO. GEOMETRY COUNT DESCRIPTION

IBM03254B4CT3A-75A

Contextual Info: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1

transistor cay

Contextual Info: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A EC Update -10 Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1

tsop-54

Abstract: sam av2 sdram 4 bank 4096 16 T4 PN diode IBM0364404CT3B10
Contextual Info: . IBM0364404 IBM0364804 IBM0364164 IBM03644B4 64Mb Synchronous DRAM - Die Revision B Preliminary Features • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command • High Performance: -260, CL=2,3 -360, CL=3 -10, CL=3

PC100-222

Abstract: PC133-333 TSOP54 HYS64V32220GD-7 HYS64V32220GD-8-C2 HYS64V32220GDL-8
Contextual Info: 3.3V SDRAM Modules HYS64V32220GD L 256MB PC100/PC133 144 pin SO-DIMM SDRAM Modules Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 (256 MByte) non-parity module organisation

IBM0364404C

Contextual Info: . IBM0364404C IBM0364164C IBM0364804C IBM03644B4C 64Mb Synchronous DRAM - Die Revision A Features • Programmable Wrap Sequence: Sequential or Interleave • High Performance: • Multiple Burst Read with Single Write Option -360, CL=3 -365, CL=3 -370, CL=3

DIMM 72 pin out

Abstract: pc133 SDRAM DIMM so-dimm 200 0D095 MO-190 HYS64V32220GDL-8 HYS64V16200GDL HYS64V32220GDL PC100-222 TSOP54
Contextual Info: 144 pin SO-DIMM SDRAM Modules HYS64V16200GDL HYS64V32220GDL 128MB & 256MB PC100/PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC100 and PC133 notebook applications • One bank 16M x 64 128MByte and two banks 32M x 64 (256 MByte)

so-dimm 200

Abstract: HYS64V16200GDL HYS64V16200GDL-7 HYS64V16200GDL-8 HYS64V32220GDL PC100-222 TSOP54 L-DIM-144-10
Contextual Info: 144 pin SO-DIMM SDRAM Modules HYS64V16200GDL HYS64V32220GDL 128MB & 256 MB PC100 / PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC100 and PC133 notebook applications • One bank 16M x 64 128MByte and two banks 32M x 64 (256 MByte)

DD322

Abstract: GA14-5286-08
Contextual Info: FAS I i rcAO\ IBM0364804C IBM0364164C IBM0364404C IBM03644B4C Preliminary 64Mb Synchronous DRAM Features Programmable Wrap Sequence: Sequential or Interleave • High Performance: -eO.CL-3 I -322, CL-3 : -10.C U 3 fen I Clock Frequency tcK j Clock Cycle Units |

PC133-333

Abstract: PC133-333-520 TSOP54
Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications Product Speed CL tRCD tRP • PC100 and PC133 versions

MO-161

Abstract: PC133-333 PC133-333-520 TSOP54
Contextual Info: HYS 64V16302GU SDRAM-Modules 3.3 V 16M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules Product Speed CL tRCD tRP • PC100 and PC133 versions -7.5 PC133 3 3 3 • One bank 16M × 64 organization -8 PC100 2 2 2 • Optimized for byte-write non-parity

Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications Product Speed CL tRCD tRP • PC100 and PC133 versions

PC133-333

Abstract: PC133-333-520 TSOP54 infineon hys64v4300gu-8-b hys64v4300gu-8-b
Contextual Info: HYS 64V4300GU SDRAM-Modules 3.3 V 4M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP • PC100 and PC133 versions

PC133-333

Abstract: infineon hys64v4300gu-8-b hys64v4300gu-8-b MO-161 PC133-333-520 TSOP54
Contextual Info: HYS 64V4300GU SDRAM-Modules 3.3 V 4M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP • PC100 and PC133 versions

39S256160DT-7

Abstract: HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOPII-54 P-TSOP-54-2
Contextual Info: HYB39S256400/800/160DT L /DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 -7 -7.5 -8 Units • Data Mask for Read / Write control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh fCK 166

AS4C32M16S-7AI

Abstract: TSOP 54 II
Contextual Info: Datasheet | Rev. 1.1 | 2012 512Mbit Single-Data-Rate SDR SDRAM AS4C64M8S-7TCN 64Mx8 (16M x 8 x 4 Banks) AS4C32M16S-7TCN 32Mx16 (8M x 16 x 4 Banks) Datasheet Version 1. 1 1 512 Mbit SDRAM AS4C[08/16] Revision History R Rev. 1.1 April 2012 Revised Operating-; Standby- and Refresh Currents

MO-161

Abstract: PC133-333 PC133-333-520 TSOP54
Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP • PC100 and PC133 versions

Contextual Info: HYS 64V16302GU SDRAM-Modules 3.3 V 16M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications, supporting 256Mbit addressing Product Speed