Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TSOP54 OUTLINE Search Results

    TSOP54 OUTLINE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    TSOP54 OUTLINE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C4927

    Abstract: SDRAM 2MX16X4 TSOP54 RNA4A8E103JT CC0603 2MX16x4 MCR03EZHF K4S281632B-TC-L1H cc0508 105-1089-00 RM73B1JT301J
    Text: Valis_X2_BOM.txt # Board Station BOM file # date : Thursday September 20, 2001; 14:04:26 # Variant : No_Stuff REFERENCE COMPANY PART NO. COUNT DESCRIPTION GEOMETRY 1 2 05085C104MA11A 1 24 cap, AVX, 0.1uF outline cc0508 3 4 0603YC103JAT2A 0603YC104JAT2A 1 51


    Original     		PDF 05085C104MA11A cc0508 0603YC103JAT2A 0603YC104JAT2A cc0603 10MV1200GXT 218-8LPST 293D476X9016D2T 597-5112-40X C4927 SDRAM 2MX16X4 TSOP54 RNA4A8E103JT CC0603 2MX16x4 MCR03EZHF K4S281632B-TC-L1H cc0508 105-1089-00 RM73B1JT301J

    RNA4A8E472JT

    Abstract: CC1812 j1 u10 samsung MCCA104K0NRT RC0402 RNA4A header 2x5 MIC29152BU SDRAM 2MX16X4 TSOP54 LED-0603
    Text: # Board Station BOM file # date : Thursday August 14, 2003; 10:42:21 # Variant : No_Stuff REFERENCE C37 C38 C39 C40 C41 C42 C43 C44 C45 C46 C47 C48 C49 C50 C51 C52 C53 C55 C56 C57 C58 C59 C60 C61 C62 C63 C64 C65 C66 C67 C68 C69 C70 C71 C72 C73 C74 C75 C76


    Original     		PDF am29dl323cb90ei tsop48w, mpc744x cbga360, 2Mx16x4 tsop54, mic29152bu qs3257 RNA4A8E472JT CC1812 j1 u10 samsung MCCA104K0NRT RC0402 RNA4A header 2x5 SDRAM 2MX16X4 TSOP54 LED-0603

    q1257

    Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
    Text: 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 1 Product Information 2003 / 2004 DRAM SPECTRUM www.infineon.com Never stop thinking. 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 2 Introduction September 2003. This edition of the DRAM Spectrum has been developed


    Original     		PDF 2002791-D-RAM hoch17 DDR400 PC3200) B112-H6731-G10-X-7600 q1257 Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66

    512m pc133 SDRAM DIMM

    Abstract: TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash
    Text: Product Information 2004 MEMORY SPECTRUM w w w. i n f i n e o n . c o m / m e m o r y w w w. i n f i n e o n . c o m / m e m o r y / f l a s h Never stop thinking. Introduction A P R I L 2 0 0 4 . This edition of Memory Spectrum has been developed to enable you to easily view the entire range of Infineon’s memory products.


    Original     		PDF DDR400 PC3200) B166-H8399-X-X-7600 512m pc133 SDRAM DIMM TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash

    105-1089-00

    Abstract: C26C31 BI HM00 motorola c100 CBGA360 MNR14 TSSOP48 outline TSSOP48 AMP 120527-1 st c102
    Text: # Board Station BOM file # date : Thursday November 15, 2001;10:45:25 AM # Variant : No_Stuff REFERENCE C17 C1 C5 C47 C48 C49 C50 C51 C52 C53 C54 C55 C56 C6 C2 C3 C4 C16 C58 C59 C60 C61 C63 C64 C65 C66 C68 C69 C70 C72 C73 C74 C75 C77 C78 C79 C80 C97 C98 C99 C100 C101 C102


    Original     		PDF 05085C103MA11A 05085C104MA11A cc0508 0603YC103JAT2A 0603YC104JAT2A RM73B1JT101J RM73B1JT102J rc0603 105-1089-00 C26C31 BI HM00 motorola c100 CBGA360 MNR14 TSSOP48 outline TSSOP48 AMP 120527-1 st c102

    HC2500

    Abstract: rc73l2 RNA4A RC0402 GAL-5 MIC29152BU K4S561632B-TC75 GRM39X7R104J016AD 0603YC104JAT2A 293D476X9016D2T
    Text: # Board Station BOM file # date : Friday January 24, 2003; 13:5:20:00 PM # Variant : No_Stuff Valis Rev. X3 BOM Updated on 04/01/03 For 755 Processor Build Only. Add wire to C65 side faceing U8 to R88 via on Back Side. ITEM_NO COMPANY PART NO. GEOMETRY COUNT DESCRIPTION


    Original     		PDF 05085C104MA11A cc0508 0603YC104JAT2A cc0603 218-8LPST 293D476X9016D2T plug2x32 som16 cct7343 ieee1386 HC2500 rc73l2 RNA4A RC0402 GAL-5 MIC29152BU K4S561632B-TC75 GRM39X7R104J016AD 0603YC104JAT2A 293D476X9016D2T

    IBM03254B4CT3A-75A

    Abstract: No abstract text available
    Text: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1


    Original     		PDF IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb IBM03254B4CT3A-75A

    transistor cay

    Abstract: No abstract text available
    Text: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A EC Update -10 Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1


    Original     		PDF IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb transistor cay

    tsop-54

    Abstract: sam av2 sdram 4 bank 4096 16 T4 PN diode IBM0364404CT3B10
    Text: . IBM0364404 IBM0364804 IBM0364164 IBM03644B4 64Mb Synchronous DRAM - Die Revision B Preliminary Features • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command • High Performance: -260, CL=2,3 -360, CL=3 -10, CL=3


    Original     		PDF IBM0364404 IBM0364804 IBM0364164 IBM03644B4 tsop-54 sam av2 sdram 4 bank 4096 16 T4 PN diode IBM0364404CT3B10

    PC100-222

    Abstract: PC133-333 TSOP54 HYS64V32220GD-7 HYS64V32220GD-8-C2 HYS64V32220GDL-8
    Text: 3.3V SDRAM Modules HYS64V32220GD L 256MB PC100/PC133 144 pin SO-DIMM SDRAM Modules Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 (256 MByte) non-parity module organisation


    Original     		PDF HYS64V32220GD 256MB PC100/PC133 PC133 PC100 PC100-222 PC133-333 TSOP54 HYS64V32220GD-7 HYS64V32220GD-8-C2 HYS64V32220GDL-8

    IBM0364404C

    Abstract: No abstract text available
    Text: . IBM0364404C IBM0364164C IBM0364804C IBM03644B4C 64Mb Synchronous DRAM - Die Revision A Features • Programmable Wrap Sequence: Sequential or Interleave • High Performance: • Multiple Burst Read with Single Write Option -360, CL=3 -365, CL=3 -370, CL=3


    Original     		PDF IBM0364404C IBM0364164C IBM0364804C IBM03644B4C

    DIMM 72 pin out

    Abstract: pc133 SDRAM DIMM so-dimm 200 0D095 MO-190 HYS64V32220GDL-8 HYS64V16200GDL HYS64V32220GDL PC100-222 TSOP54
    Text: 144 pin SO-DIMM SDRAM Modules HYS64V16200GDL HYS64V32220GDL 128MB & 256MB PC100/PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC100 and PC133 notebook applications • One bank 16M x 64 128MByte and two banks 32M x 64 (256 MByte)


    Original     		PDF HYS64V16200GDL HYS64V32220GDL 128MB 256MB PC100/PC133 PC100 PC133 128MByte) PC133 DIMM 72 pin out pc133 SDRAM DIMM so-dimm 200 0D095 MO-190 HYS64V32220GDL-8 HYS64V16200GDL HYS64V32220GDL PC100-222 TSOP54

    so-dimm 200

    Abstract: HYS64V16200GDL HYS64V16200GDL-7 HYS64V16200GDL-8 HYS64V32220GDL PC100-222 TSOP54 L-DIM-144-10
    Text: 144 pin SO-DIMM SDRAM Modules HYS64V16200GDL HYS64V32220GDL 128MB & 256 MB PC100 / PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC100 and PC133 notebook applications • One bank 16M x 64 128MByte and two banks 32M x 64 (256 MByte)


    Original     		PDF HYS64V16200GDL HYS64V32220GDL 128MB PC100 PC133 PC133 128MByte) so-dimm 200 HYS64V16200GDL HYS64V16200GDL-7 HYS64V16200GDL-8 HYS64V32220GDL PC100-222 TSOP54 L-DIM-144-10

    B0BC9R000008 DIODE

    Abstract: B0BC6R100010 B0BC01700015 B0BC9R000008 varistor k271 Diode C65 004 LYNX3DM transistor C388 B0BC3R700004 3225 K30
    Text: ORDER NO. CPD0207023C0 Personal Computer CF-R1 This is the Service Manual for the following areas. M …for U.S.A. and Canada E …for U.K. G …for Germany F …for France T …for Italy P …for Spain Model No. CF-R1P82ZV1 2 1: Operation System G: Microsoft Windows® XP Professional


    Original     		PDF CPD0207023C0 CF-R1P82ZV1 DTA144EE BRPY1211F LN1361C B0BC9R000008 DIODE B0BC6R100010 B0BC01700015 B0BC9R000008 varistor k271 Diode C65 004 LYNX3DM transistor C388 B0BC3R700004 3225 K30

    MO-161

    Abstract: PC133-333 PC133-333-520 TSOP54
    Text: HYS 64V16302GU SDRAM-Modules 3.3 V 16M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules Product Speed CL tRCD tRP • PC100 and PC133 versions -7.5 PC133 3 3 3 • One bank 16M × 64 organization -8 PC100 2 2 2 • Optimized for byte-write non-parity


    Original     		PDF 64V16302GU 64-Bit 168-pin 256Mbit PC100 PC133 PC133 PC100 MO-161 PC133-333 PC133-333-520 TSOP54

    Untitled

    Abstract: No abstract text available
    Text: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications Product Speed CL tRCD tRP • PC100 and PC133 versions


    Original     		PDF 64V8301GU 64-Bit 168-pin PC100 PC133 L-DIM-168-32 GLD09263

    PC133-333

    Abstract: PC133-333-520 TSOP54 infineon hys64v4300gu-8-b hys64v4300gu-8-b
    Text: HYS 64V4300GU SDRAM-Modules 3.3 V 4M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP • PC100 and PC133 versions


    Original     		PDF 64V4300GU 64-Bit 168-pin PC100 PC133 L-DIM-168-32 GLD09263 PC133-333 PC133-333-520 TSOP54 infineon hys64v4300gu-8-b hys64v4300gu-8-b

    PC133-333

    Abstract: infineon hys64v4300gu-8-b hys64v4300gu-8-b MO-161 PC133-333-520 TSOP54
    Text: HYS 64V4300GU SDRAM-Modules 3.3 V 4M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP • PC100 and PC133 versions


    Original     		PDF 64V4300GU 64-Bit 168-pin PC100 PC133 L-DIM-168-32 MO-161) PC133-333 infineon hys64v4300gu-8-b hys64v4300gu-8-b MO-161 PC133-333-520 TSOP54

    39S256160DT-7

    Abstract: HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOPII-54 P-TSOP-54-2
    Text: HYB39S256400/800/160DT L /DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 -7 -7.5 -8 Units • Data Mask for Read / Write control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh fCK 166


    Original     		PDF HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil P-TSOPII-54 GPX09039 TFBGA-54 39S256160DT-7 HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOP-54-2

    AS4C32M16S-7AI

    Abstract: TSOP 54 II
    Text: Datasheet | Rev. 1.1 | 2012 512Mbit Single-Data-Rate SDR SDRAM AS4C64M8S-7TCN 64Mx8 (16M x 8 x 4 Banks) AS4C32M16S-7TCN 32Mx16 (8M x 16 x 4 Banks) Datasheet Version 1. 1 1 512 Mbit SDRAM AS4C[08/16] Revision History R Rev. 1.1 April 2012 Revised Operating-; Standby- and Refresh Currents


    Original     		PDF 512Mbit AS4C64M8S-7TCN 64Mx8 AS4C32M16S-7TCN 32Mx16 AS4C32M16S-7AI TSOP 54 II

    MO-161

    Abstract: PC133-333 PC133-333-520 TSOP54
    Text: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP • PC100 and PC133 versions


    Original     		PDF 64V8301GU 64-Bit 168-pin PC100 PC133 PC133 PC100 MO-161 PC133-333 PC133-333-520 TSOP54

    Untitled

    Abstract: No abstract text available
    Text: HYS 64V16302GU SDRAM-Modules 3.3 V 16M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications, supporting 256Mbit addressing Product Speed


    Original     		PDF 64V16302GU 64-Bit 168-pin 256Mbit PC100 PC133

    Untitled

    Abstract: No abstract text available
    Text: IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A APPLICATION SPEC # 29L0000.E36980 Engineering Change Number 13 ROW /1 1 COL / 2 BS 16Mb x 4 I/O x 4 Bank 13 ROW /1 0 COL / 2 BS (8Mb x 8 I/O x 4 Bank) Date E36980 13 ROW / 9 COL / 2 BS (4Mb x 16 I/O x 4 Bank)


    OCR Scan     		PDF IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb 29L0000 E36980 IBM0325404CT3A-260 29L6113

    DD322

    Abstract: GA14-5286-08
    Text: FAS I i rcAO\ IBM0364804C IBM0364164C IBM0364404C IBM03644B4C Preliminary 64Mb Synchronous DRAM Features Programmable Wrap Sequence: Sequential or Interleave • High Performance: -eO.CL-3 I -322, CL-3 : -10.C U 3 fen I Clock Frequency tcK j Clock Cycle Units |


    OCR Scan     		PDF IBM0364804C IBM0364164C IBM0364404C IBM03644B4C cycles/64ms A0-A11) DD322 GA14-5286-08