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    TSOP-56 SAMSUNG Search Results

    TSOP-56 SAMSUNG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S641632k uc60

    Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
    Text: General Information SDRAM SDRAM Product Guide November 2007 Memory Division November 2007 General Information SDRAM A. SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 S X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM


    Original     		PDF 4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 80TYP 25TYP K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N

    M312L6523DZ3

    Abstract: K4H561638J-LCCC k4h561638j K4H641638N k4h560438j K4H560838J-LCCC DDR266 DDR333 DDR400 K4H560438H
    Text: General Information DDR SDRAM DDR SDRAM Product Guide December 2007 Memory Division December 2007 General Information DDR SDRAM A. DDR SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 H X X X X X X X - X X X X Speed SAMSUNG Memory DRAM Temperature & Power


    Original     		PDF 128Mb, 4K/64ms 256Mb, 60Ball 512Mb) 00MAX M312L6523DZ3 K4H561638J-LCCC k4h561638j K4H641638N k4h560438j K4H560838J-LCCC DDR266 DDR333 DDR400 K4H560438H

    tsop 138

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0805DT1-C M374F0805DT1-C Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0805DT1-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF M374F0805DT1-C M374F0805DT1-C 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin tsop 138

    pc2700u

    Abstract: PC2700U-25330-A1 PC2700U-25330-C3 PC2700U-25330-B2 PC2700 DDR266A samsung 512mb ddr cl3 samsung 512mb ddr cl3 184pin DDR200 DDR266B
    Text: General Information DDR SDRAM PC2700 Unbuffered DIMM Product Guide PC2700 gerber base June. 2002 Memory Division June, 2002 General Information DDR SDRAM A. DDR SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 H X X X X X X X - X X X X Speed


    Original     		PDF PC2700 4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, pc2700u PC2700U-25330-A1 PC2700U-25330-C3 PC2700U-25330-B2 DDR266A samsung 512mb ddr cl3 samsung 512mb ddr cl3 184pin DDR200 DDR266B

    MX29GL256

    Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
    Text: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes


    Original     		PDF AT49SV163D 48-Pin 48-Ball S29AS016J EN29SL800 S29AS00gest MX29GL256 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D

    k4B2G1646

    Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
    Text: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


    Original     		PDF

    th50vpf

    Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00
    Text: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. — TC59LM806CFT-50 — TC59LM806CFT-55


    Original     		PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 64M/32M th50vpf TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    SDP-UNIV-48TS

    Abstract: GDP-f016-56ts sdp-6811-52b SDP-UNIV-44TQ SDP-UNIV-44PSO SDP-UNIV-44 sDP-st064-56ts 29DL640D 87C552 xc68hc11k1
    Text: Dataman-48UXP Intelligent Universal Programmer User′′s Manual Copyright Notice This document is copyrighted, 2000, 2001, 2002 by DATAMAN PROGRAMMERS LTD. All rights are reserved. DATAMAN PROGRAMMERS LTD. reserves the right to make improvements to the products described in this manual at any time without notice.


    Original     		PDF Dataman-48UXP Dataman-48UXP SDP-UNIV-48TS GDP-f016-56ts sdp-6811-52b SDP-UNIV-44TQ SDP-UNIV-44PSO SDP-UNIV-44 sDP-st064-56ts 29DL640D 87C552 xc68hc11k1

    SAMSUNG NAND FLASH

    Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
    Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for


    Original     		PDF AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8

    Irvine Sensors Corporation

    Abstract: No abstract text available
    Text: Data Sheet Part No. ISDD64M8STC Irvine Sensors Corporation Microelectronics Products Division 512Mbit 64M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD64M8STC 512Mbit Irvine Sensors Corporation

    Samsung k9f1208u

    Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
    Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.


    Original     		PDF AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory

    TSOP 54 PIN footprint

    Abstract: 256MBIT NOR FLASH tsop sensors Micron NAND DQS ddr 3 tsop k4h280838 stc 3001 256-MBIT
    Text: Data Sheet Part No. ISDD32M8STC Irvine Sensors Corporation Microelectronics Products Division 256Mbit 32M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD32M8STC 256Mbit a256Mbit TSOP 54 PIN footprint 256MBIT NOR FLASH tsop sensors Micron NAND DQS ddr 3 tsop k4h280838 stc 3001 256-MBIT

    K4H281638

    Abstract: ISDD16M16STD Toshiba nand flash dqs 256-MBIT TSOP 54 PIN footprint
    Text: Data Sheet Part No. ISDD16M16STD Irvine Sensors Corporation Microelectronics Products Division 256Mbit 16M x 16 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD16M16STD 256Mbit K4H281638 ISDD16M16STD Toshiba nand flash dqs 256-MBIT TSOP 54 PIN footprint

    K4H561638

    Abstract: tsop sensors
    Text: Data Sheet Part No. ISDD32M16STD Irvine Sensors Corporation Microelectronics Products Division 512Mbit 32M x 16 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD32M16STD 512Mbit K4H561638 tsop sensors

    0005 adr

    Abstract: TSOP 54 PIN footprint 256-MBIT
    Text: Data Sheet Part No. ISDD64M4STB Irvine Sensors Corporation Microelectronics Products Division 256Mbit 64M x 4 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD64M4STB 256Mbit 0005 adr TSOP 54 PIN footprint 256-MBIT

    K4H560438

    Abstract: nand flash DQS
    Text: Data Sheet Part No. ISDD64M8STB Irvine Sensors Corporation Microelectronics Products Division 512Mbit 64M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD64M8STB 512Mbit 256Mbit K4H560438 nand flash DQS

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    DN-12

    Abstract: TSOP RECEIVER 128M NAND Flash Memory compact flash PCMCIA SRAM Card picu S3F49FAX USB Flash Memory SAMSUNG S3F49FAXZA S3F49FAXZZ
    Text: S3F49FAX for Compact Flash SPECIFICATION Revision 1.0 HELP DESK Sejin, Ahn herlock@sec.samsung.com Sanghun, Song (hoontour@samsung.com) SPECIFICATION S3F49FAX Table of Contents 1.1 1.2 1.3 2.1 2.2 Introduction .2


    Original     		PDF S3F49FAX S3F49FAX 100-pin 100-TQFP-1414) 100-TQFP-1414 100-TQFP-1414 DN-12 TSOP RECEIVER 128M NAND Flash Memory compact flash PCMCIA SRAM Card picu USB Flash Memory SAMSUNG S3F49FAXZA S3F49FAXZZ

    ISDD128M4LTB

    Abstract: K4H560438 nand flash DQS
    Text: Data Sheet Part No. ISDD128M4LTB Irvine Sensors Corporation Microelectronics Products Division 512Mbit 128M x 4 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD128M4LTB 512Mbit ISDD128M4LTB K4H560438 nand flash DQS

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F320 8 0BS1 KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits


    OCR Scan     		PDF KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin

    M8512

    Abstract: samsung dram AM8512 TSOP 56 Package nand memory
    Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER


    OCR Scan     		PDF 100ns 150ns 16Bit 18Bit M8512 samsung dram AM8512 TSOP 56 Package nand memory

    Untitled

    Abstract: No abstract text available
    Text: KM M5328004CS/CSG KM M5328104CS/CSG DRAM MODULE KMM5328004CS/CSG & KMM5328104CS/CSG Fast Page Mode with EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04CS is a 8Mx32bits RAM high density , Part Identification


    OCR Scan     		PDF M5328004CS/CSG M5328104CS/CSG KMM5328004CS/CSG KMM5328104CS/CSG KMM53280 8Mx32bits KMM5328004CS cycles/64ms 5328004CSG